FMMT38A /B Not Recommended for New Design Please Use FMMT38C FMMT38A FMMT38B FMMT38C ISSUE 3 – AUGUST 1996 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp TYPICAL CHARACTERISTICS VCE=5V IC/IB=100 1.6 hFE - Normalised Gain VCE(sat) - (Volts) 1.0 -55°C 0.8 +25°C 0.6 +100°C 0.4 +175°C 0.2 0.001 0.01 0.1 1 0.6 -55°C 0.2 0.001 IC - Collector Current (Amps) 0.01 0.1 hFE v IC 2.0 VBE - (Volts) -55°C 1.5 +25°C +100°C +25°C 1.0 +100°C +175°C 0.5 0.1 1 0.5 0.001 10 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 10 1 IC - Collector Current (A) Thermal Resistance (°C/W) D=1 (D.C.) 150 100 D=0.5 50 D=0.2 0 0.0001 D=0.1 D=0.05 Single Pulse 0.001 0.01 100m 10m DC 1s 100ms 10ms 1ms 100us 1 10 UNIT 80 V Collector-Emitter Voltage V CEO 60 V Emitter-Base Voltage V EBO 10 V Peak Pulse Current I CM 800 mA Continuous Collector Current IC 300 mA 330 mW -55 to +150 °C Power Dissipation at T amb=25°C P tot Operating and Storage Temperature Range T j:T stg 100 100m 1 10 Pulse Width (seconds) VCE - Collector Emitter Voltage (V) Maximum transient thermal impedance 3 - 101 Safe Operating Area 100 SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V (BR)CBO 80 V I C=10 A, I E=0 Collector-Emitter Sustaining Voltage V CEO(sus) 60 V I C=10mA, I B=0 Emitter-Base Breakdown Voltage V (BR)EBO 10 V I E=10 A, I C=0 Collector Cut-Off Current I CBO 100 nA V CB=60V, I E=0 Emitter Cut-Off Current I EBO 100 nA V EB=8V, I C=0 Collector-Emitter Saturation Voltage V CE(sat) 1.25 V I C=800mA, I B=8mA* Base-Emitter Turn-on Voltage V BE(on) 1.8 V I C=800mA, V CE=5V* Static Forward Current Transfer Ratio 1m 0.1 VALUE V CBO PARAMETER -55°C 1.5 +175°C 0.01 SYMBOL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 2.0 0.001 PARAMETER Collector-Base Voltage VCE=5V IC/IB=100 VBE(sat) - (Volts) 10 1 IC - Collector Current (Amps) VCE(sat) v IC 1.0 B ABSOLUTE MAXIMUM RATINGS. +25°C 0.8 0.4 E C FMMT38A – 4J FMMT38B – 5J FMMT38C – 7J 1.2 0 10 PARTMARKING DETAILS – +100°C 1.4 1.0 FMMT38A FMMT38B FMMT38C SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS FMMT38A h FE 500 1000 I C=100mA, V CE=5V* I C=500mA, V CE=5V* FMMT38B 2000 4000 I C=100mA, V CE=5V* I C=500mA, V CE=5V* FMMT38C 5000 10000 I C=100mA, V CE=5V* I C=500mA, V CE=5V* *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 100 FMMT38A /B Not Recommended for New Design Please Use FMMT38C FMMT38A FMMT38B FMMT38C ISSUE 3 – AUGUST 1996 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp TYPICAL CHARACTERISTICS VCE=5V IC/IB=100 1.6 hFE - Normalised Gain VCE(sat) - (Volts) 1.0 -55°C 0.8 +25°C 0.6 +100°C 0.4 +175°C 0.2 0.001 0.01 0.1 1 0.6 -55°C 0.2 0.001 IC - Collector Current (Amps) 0.01 0.1 hFE v IC 2.0 VBE - (Volts) -55°C 1.5 +25°C +100°C +25°C 1.0 +100°C +175°C 0.5 0.1 1 0.5 0.001 10 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 10 1 IC - Collector Current (A) Thermal Resistance (°C/W) D=1 (D.C.) 150 100 D=0.5 50 D=0.2 0 0.0001 D=0.1 D=0.05 Single Pulse 0.001 0.01 100m 10m DC 1s 100ms 10ms 1ms 100us 1 10 UNIT 80 V Collector-Emitter Voltage V CEO 60 V Emitter-Base Voltage V EBO 10 V Peak Pulse Current I CM 800 mA Continuous Collector Current IC 300 mA 330 mW -55 to +150 °C Power Dissipation at T amb=25°C P tot Operating and Storage Temperature Range T j:T stg 100 100m 1 10 Pulse Width (seconds) VCE - Collector Emitter Voltage (V) Maximum transient thermal impedance 3 - 101 Safe Operating Area 100 SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V (BR)CBO 80 V I C=10 A, I E=0 Collector-Emitter Sustaining Voltage V CEO(sus) 60 V I C=10mA, I B=0 Emitter-Base Breakdown Voltage V (BR)EBO 10 V I E=10 A, I C=0 Collector Cut-Off Current I CBO 100 nA V CB=60V, I E=0 Emitter Cut-Off Current I EBO 100 nA V EB=8V, I C=0 Collector-Emitter Saturation Voltage V CE(sat) 1.25 V I C=800mA, I B=8mA* Base-Emitter Turn-on Voltage V BE(on) 1.8 V I C=800mA, V CE=5V* Static Forward Current Transfer Ratio 1m 0.1 VALUE V CBO PARAMETER -55°C 1.5 +175°C 0.01 SYMBOL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 2.0 0.001 PARAMETER Collector-Base Voltage VCE=5V IC/IB=100 VBE(sat) - (Volts) 10 1 IC - Collector Current (Amps) VCE(sat) v IC 1.0 B ABSOLUTE MAXIMUM RATINGS. +25°C 0.8 0.4 E C FMMT38A – 4J FMMT38B – 5J FMMT38C – 7J 1.2 0 10 PARTMARKING DETAILS – +100°C 1.4 1.0 FMMT38A FMMT38B FMMT38C SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS FMMT38A h FE 500 1000 I C=100mA, V CE=5V* I C=500mA, V CE=5V* FMMT38B 2000 4000 I C=100mA, V CE=5V* I C=500mA, V CE=5V* FMMT38C 5000 10000 I C=100mA, V CE=5V* I C=500mA, V CE=5V* *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 100