Central CMPD2838E Enhanced specification surface mount dual, silicon switching diode Datasheet

CMPD2836E
CMPD2838E
ENHANCED SPECIFICATION
SURFACE MOUNT
DUAL, SILICON
SWITCHING DIODES
SOT-23 CASE
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPD2836E and
CMPD2838E are Enhanced versions of the CMPD2836
and CMPD2838 High Speed Switching Diodes.
These devices are manufactured by the epitaxial
planar process, in an epoxy molded surface mount
SOT-23 package, designed for high speed switching
applications.
FEATURED ENHANCED SPECIFICATIONS:
♦ BVR from 75V min to 120V min.
♦
The following configurations are available:
CMPD2836E
DUAL, COMMON ANODE
CMPD2838E
DUAL, COMMON CATHODE
MAXIMUM RATINGS: (TA=25 °C)
♦ Peak Repetitive Reverse Voltage
Average Forward Current
Peak Forward Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
VF from 1.2V max to 1.0V max.
MARKING CODE: CA2E
MARKING CODE: CA6E
SYMBOL
VRRM
IO
IFM
PD
TJ, Tstg
ΘJA
120
200
300
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
♦ IR
VR=80V
100
♦ BVR
IR=100µA
120
150
♦ VF
IF=10mA
0.72
0.85
♦ VF
IF=50mA
0.84
0.95
♦ VF
IF=100mA
0.92
1.0
CT
VR=0, f=1.0MHz
1.5
4.0
trr
IR=IF=10mA, RL=100Ω, Rec. to 1.0mA
4.0
UNITS
V
mA
mA
mW
°C
°C/W
UNITS
nA
V
V
V
V
pF
ns
♦ Enhanced specification
R3 (25-January 2010)
CMPD2836E
CMPD2838E
ENHANCED SPECIFICATION
SURFACE MOUNT
DUAL, SILICON
SWITCHING DIODES
SOT-23 CASE - MECHANICAL OUTLINE
PIN CONFIGURATIONS
CMPD2836E
CMPD2838E
LEAD CODE:
1) Cathode D2
2) Cathode D1
3) Anode D1, D2
LEAD CODE:
1) Anode D2
2) Anode D1
3) Cathode D1, D2
MARKING CODE: CA2E
MARKING CODE: CA6E
R3 (25-January 2010)
w w w. c e n t r a l s e m i . c o m
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