DMP58D0LFB P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS RDS(ON) Package -50V 8Ω @ VGS = -5V X1-DFN1006-3 ID TA = +25°C -310A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications • • • • DC-DC Converters Power management functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected 1kV Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • • • • Case: X1-DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Weight: 0.001 grams (approximate) Drain X1-DFN1006-3 S Gate D G Bottom View ESD PROTECTED Top View Pin-Out Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 4) Part Number DMP58D0LFB-7 DMP58D0LFB-7B Notes: Case X1-DFN1006-3 X1-DFN1006-3 Packaging 3,000 / Tape & Reel 10,000 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information DMP58D0LFB-7 DMP58D0LFB-7B NZ NZ Top View Dot Denotes Drain Side Top View Bar Denotes Gate and Source Side NZ = Product Type Marking Code DMP58D0LFB Document number: DS35206 Rev. 6 - 2 1 of 6 www.diodes.com September 2012 © Diodes Incorporated DMP58D0LFB Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) VGS = -5V Steady State Continuous Drain Current (Note 5) VGS = -5V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value -50 ±20 -180 -150 ID mA IDM -310 -250 -500 Symbol PD RθJA PD RθJA TJ, TSTG Max 0.47 258 1.22 105 -55 to +150 ID Pulsed Drain Current (Note 6) Unit V V mA mA Thermal Characteristics Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 4) Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Operating and Storage Temperature Range Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -50 — — — — — — -1.0 ±5 V µA µA VGS = 0V, ID = -250μA VDS = -50V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) Static Drain-Source On-Resistance RDS (ON) |Yfs| -0.8 — — 0.05 — 6 12 — -2.1 8 18 — V Ω Ω S VDS = VGS, ID = -250μA VGS = -5V, ID = -100mA VGS = -2.5V, ID = -10mA VDS = -25V, ID = -100mA Ciss Coss Crss tD(on) tr tD(off) tf — — — — — — — 27 4.0 1.4 30.7 84.1 201.8 32.2 — — — — — — — pF VDS = -25V, VGS = 0V, f = 1.0MHz ns VGS = -4.5V, VDS = -30V, RG = 50Ω, ID = -10mA Forward Transfer Admittance DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Test Condition 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP58D0LFB Document number: DS35206 Rev. 6 - 2 2 of 6 www.diodes.com September 2012 © Diodes Incorporated DMP58D0LFB 0.3 0.3 VGS = 10V VGS = 4.0V 0.25 ID, DRAIN CURRENT (A) VGS = 4.5V 0.2 VGS = 3.0V 0.15 0.1 VGS = 2.5V 0.05 VGS = 2.0V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VGS = 2.5V 8 VGS = 4.5V 6 4 VGS = 10V 2 0 0 0.05 0.1 0.15 0.2 0.25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 5V ID = 150mA 1.3 1.1 0.9 0.7 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMP58D0LFB Document number: DS35206 Rev. 6 - 2 0.1 3 of 6 www.diodes.com 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 5 16 TA = 150°C 14 TA = 125°C 12 10 8 TA = 85°C 6 TA = 25°C 4 2 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON RESISTANCE (NORMALIZED) VGS = 10V ID = 300mA 0.5 -50 0.15 0 0 0.3 1.7 1.5 T A = 125°C TA = -55°C 0.2 5 12 10 T A = 150°C TA = 25°C 0.05 VGS = 1.8V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ID, DRAIN CURRENT (A) 0.25 VGS = 5.0V TA = 85°C VGS = 5V TA = -55°C 0 0.05 0.1 0.15 0.2 0.25 ID, DRAIN CURRENT (A) Fig. 4 On-Resistance vs. Drain Current and Temperature 0.3 12 10 VGS=5V, ID=150mA 8 6 VGS=10V, ID=300mA 4 2 0 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance vs. Temperature 150 September 2012 © Diodes Incorporated DMP58D0LFB 0.3 VGS(TH), GATE THRESHOLD VOLTAGE (V) 2.5 0.25 IS, SOURCE CURRENT (A) 2 ID = 1mA 1.5 ID = 250µA 1 0.5 0.2 TA = 25°C 0.15 0.1 0.05 0 0.4 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 100 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 35 f = 1MHz T A = 150°C CISS CT, CAPACITANCE (pF) -IDSS, LEAKAGE CURRENT (nA) 30 TA = 125°C TA = 85°C 10 TA = 25°C 25 20 15 10 COSS 5 CRSS 0 1 0 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Drain-Source Leakage Current vs. Voltage 1 -ID(A) @PW=100µs ID, DRAIN CURRENT (A) RDS(ON) Limited 0 -4 -8 -12 -16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Junction Capacitance -20 -ID(A) @PW =1ms -ID(A) @ DC 0.1 -ID(A) @PW =10s -I D(A) @PW=1s -I D(A) @PW=100ms -I D(A) @PW=10ms 0.01 TJ(MAX) = 150°C TA = 25°C Single Pulse 0.001 0.1 -ID(A) @ PW=10µs 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 SOA, Safe Operation Area DMP58D0LFB Document number: DS35206 Rev. 6 - 2 100 4 of 6 www.diodes.com September 2012 © Diodes Incorporated DMP58D0LFB r(t), TRANSIENT THERMAL RESISTANCE 1 0.1 0.01 RθJA(t) = r(t) * RθJA RθJA = 54°C/W Duty Cycle, D = t1/ t2 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 12 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A A1 D b1 E e b2 L2 L3 X1-DFN1006-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm L1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C X1 X G2 G1 Y Dimensions Z G1 G2 X X1 Y C Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Z DMP58D0LFB Document number: DS35206 Rev. 6 - 2 5 of 6 www.diodes.com September 2012 © Diodes Incorporated DMP58D0LFB IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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