Fairchild FGW15N40A Strobe flash n-channel logic level igbt Datasheet

FGW15N40A
Strobe Flash N-Channel Logic Level IGBT
Features
General Description
„ VCE(SAT) = 4.4V at IC=150A
This N-Channel IGBT is a MOS gated, logic level device
which has been especially tailored for camera flash applications where board space is a premium. These devices have
been designed to offer exceptional power dissipation in a
very small footprint for applications where bigger, more expensive packages are impractical. The gate is ESD protected with a zener diode.
„ tfl = 1.1µs, td(OFF)I = 0.46µs
„ 2kV ESD Protected
„ High Peak Current Density
„ TSSOP - 8 package, small footprint, low profile
(1mm thick)
Applications
„ Camera Strobe
Internal Diagram
4
3
2
1
5
6
7
8
E
E
E
G
C
C
C
C
Pin 1
TSSOP-8
©2005 Fairchild Semiconductor Corporation
FGW15N40A Rev. A2
1
www.fairchildsemi.com
FGW15N40A Strobe Flash N-Channel Logic Level IGBT
August 2005
Symbol
BVCES
Parameter
Collector to Emitter Breakdown Voltage
IC
Collector Current Continuous(DC)
ICP
Collector Current Pulsed(100µs)
Ratings
400
Units
V
8
A
150
A
VGES
Gate to Emitter Voltage Continuous(DC)
±6
V
VGEP
Gate to Emitter Voltage Pulsed
±8
V
PD
Power Dissipation Total TC = 25°C
1.25
W
TJ
Operating Junction Temperature Range
-40 to 150
°C
TSTG
Storage Junction Temperature Range
-40 to 150
°C
ESD
Electrostatic Discharge Voltage at 100pF, 1500Ω
2
kV
Package Marking and Ordering Information
Device Marking
15N40A
Device
FGW15N40A
Package
TSSOP - 8
Tape Width
12mm / 16mm
Quantity
2500
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
BVCES
Collector to Emitter Breakdown Voltage
IC = 1mA, VGE = 0V
400
-
-
V
BVGES
Gate-Emitter Breakdown Voltage
IGES = ± 1mA
±8
-
-
V
ICES
Collector to Emitter Leakage Current
VCE = 400V
TC = +25oC
-
-
10
µA
o
-
-
250
µA
VGE = ± 8V
-
-
±10
µA
IC = 150A, VGE = 4.0V (NOTE 1)
-
4.4
6.0
V
TC = +125 C
IGES
Gate-Emitter Leakage Current
On State Characteristics
VCE(SAT)
Collector to Emitter Saturation Voltage
Dynamic Characteristics
QG(ON)
Gate Charge
IC = 150A, VCE = 300V, VGE = 8V
-
41
-
nC
VGEPL
Gate to Emitter Plateau Voltage
IC = 150A, VCE = 300V
-
3.3
-
V
VGE(TH)
Gate to Emitter Threshold Voltage
IC = 1.0mA,VCE = VGE
0.4
0.61
0.75
V
Input Capacitance
VCE = 10V, VGE = 0V, f = 1MHz
-
1800
-
pF
VCE = 300V, IC = 150A,
-
0.91
-
µs
CIES
Switching Characteristics
tON
Turn-On Time
td(ON)I
Current Turn-On Delay Time
VGE = 4V, RL = 2Ω,
-
0.18
-
µs
trI
Current Rise Time
RG = 51Ω, TJ = 25°C
-
0.73
-
µs
tOFF
Turn-Off Time
-
1.56
-
µs
td(OFF)I
Current Turn-Off Delay Time
-
0.46
-
µs
tfI
Current Fall Time
-
1.1
-
µs
-
80
-
°C/W
Thermal Characteristics
RθJA
Thermal Resistance Junction-Case
TSSOP - 8 (NOTE 2)
Notes:
1. Pulse Duration = 100µsec
2. Mounted on a 1 inch2 1oz copper pad
2
FGW15N40A Rev. A2
www.fairchildsemi.com
FGW15N40A Strobe Flash N-Channel Logic Level IGBT
Device Maximum Ratings TA = 25°C unless otherwise noted
ICE, ICOLLECTOR TO EMITTER CURRENT (A)
ICE, ICOLLECTOR TO EMITTER CURRENT (A)
160
TJ = -40°C
PULSE DURATION = 100µs
140
120
100
80
Waveforms in
descending order
60
VGE = 6.0V
40
VGE = 5.0V
VGE = 4.0V
20
VGE = 3.5V
0
1
1.5
2
2.5
3
3.5
4
160
TJ = 25°C
PULSE DURATION = 100µs
140
120
100
80
Waveforms in
descending order
60
VGE = 6.0V
40
VGE = 5.0V
VGE = 4.0V
20
VGE = 3.5V
0
1
4.5
1.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, ICOLLECTOR TO EMITTER CURRENT (A)
ICE, ICOLLECTOR TO EMITTER CURRENT (A)
TJ = 70°C
PULSE DURATION = 100µs
120
100
80
Waveforms in
descending order
VGE = 6.0V
40
VGE = 5.0V
VGE = 4.0V
20
VGE = 3.5V
0
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
100
80
Waveforms in
descending order
60
VGE = 6.0V
40
VGE = 5.0V
VGE = 4.0V
20
VGE = 3.5V
0
1.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
5
ICE = 120A
4
ICE = 90A
ICE = 60A
2
1
0
20
40
60
80
100
120
140
2.5
3
3.5
4
4.5
5
5.5
6
7
VGE = 4.5V
PULSE DURATION = 100µs
6
ICE = 150A
5
ICE = 120A
4
ICE = 90A
3
ICE = 60A
2
-40
TC, CASE TEMPERATURE (°C)
-20
0
20
40
60
80
100
120
140
TC, CASE TEMPERATURE (°C)
Figure 5. Collector to Emitter Saturation Voltage
vs Case Temperature
Figure 6. Collector to Emitter Saturation Voltage
vs Case Temperature
3
FGW15N40A Rev. A2
2
Figure 4. Collector to Emitter On-State Voltage vs
Collector Current
ICE = 150A
-20
5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VGE = 4V
PULSE DURATION = 100µs
-40
4.5
120
1
8
3
4
TJ = 125°C
PULSE DURATION = 100µs
140
6
Figure 3. Collector to Emitter On-State Voltage vs
Collector Current
6
3.5
160
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
7
3
Figure 2. Collector to Emitter On-State Voltage vs
Collector Current
160
60
2.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 1. Collector to Emitter On-State Voltage vs
Collector Current
140
2
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FGW15N40A Strobe Flash N-Channel Logic Level IGBT
Typical Characteristics
DUTY CYCLE < 0.5%
PULSE DURATION = 250µs
TJ = -40oC
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
7
6
ICE = 150A
ICE = 120A
5
ICE = 90A
ICE = 60A
4
3
2
0.5
1
1.5
2
2.5
3
3.5
4
7
DUTY CYCLE < 0.5%
PULSE DURATION = 250µs
TJ = 25oC
6
ICE = 150A
ICE = 120A
ICE = 90A
5
ICE = 60A
4
3
2
0.5
1
1.5
VGE, GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%
PULSE DURATION = 250µs
TJ = 70oC
8
ICE = 150A
7
ICE = 120A
ICE = 90A
6
ICE = 60A
5
4
3
3
3.5
4
4.5
5
9
DUTY CYCLE < 0.5%
PULSE DURATION = 250µs
TJ = 125oC
8
ICE = 150A
7
ICE = 120A
ICE = 90A
6
ICE = 60A
5
4
3
2
2
0
1
2
3
4
5
6
0
VGE, GATE TO EMITTER VOLTAGE (V)
0.75
1
2
3
4
5
6
7
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 9. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Figure 10. Collector to Emitter On-State Voltage
vs Gate to Emitter Voltage
5000
ICE = 1mA
VCE = VGE
FREQUENCY = 1MHz
0.7
CIES
1000
C, CAPACITANCE (pF)
VGE(TH), THRESHOLD VOLTAGE (V)
2.5
Figure 8. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
9
2
VGE, GATE TO EMITTER VOLTAGE (V)
0.65
0.6
0.55
0.5
0.45
0.4
-40
COES
100
CRES
10
4
-20
0
20
40
60
80
100
120
140
0.1
TC, CASE TEMPERATURE (°C)
Figure 11. Gate to Emitter Threshold Voltage vs
Case Temperature
10
100
Figure 12. Capacitance vs Collector to Emitter
Voltage
4
FGW15N40A Rev. A2
1
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
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FGW15N40A Strobe Flash N-Channel Logic Level IGBT
Typical Characteristics (Continued)
6
3
VCC = 300V, VGE = 4V, RGE = 51Ω, TJ = 25oC
VCC = 300V, ICE = 150A, VGE = 4V, TJ = 25oC
SWITCHING TIME (µs)
SWITCHING TIME (µs)
toff
tfall
1
ton
toff
tfall
1
ton
trise
trise
0.1
0.5
0
25
50
75
100
125
150
0
50
100
Figure 13. Switching Time vs Collector Current
250
300
Figure 14. Switching Time vs Gate Resistance
160
IG(REF) = 1mA, VCC = 300V, RL = 2Ω, TJ = 25oC
ICP, COLLECTOR PEAK CURRENT (A)
VGE, GATE TO EMITTER VOLTAGE (V)
200
RG, GATE RESISTANCE (Ω)
ICE, COLLECTOR TO EMITTER CURRENT (A)
8
150
7
6
5
4
3
2
1
0
TJ = 25°C
PULSE DURATION = 100µs
140
120
100
80
60
40
20
0
0
5
10
15
20
25
30
35
40
1
45
1.5
QG, GATE CHARGE (nC)
2
2.5
3
3.5
4
4.5
5
5.5
6
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 15. Gate Charge
Figure 16. Collector Current Limit vs Gate to
Emitter Voltage
ZθJA , NORMALIZED THERMAL RESPONSE
2.0
1.0
0.1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
t1
PD
0.01
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJA X RθJA) + TC
SINGLE PULSE
0.001
10-4
10-3
10-2
10-1
100
101
t1 , RECTANGULAR PULSE DURATION (s)
Figure 17. Normalized Transient Thermal Impedance, Junction to Case
5
FGW15N40A Rev. A2
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FGW15N40A Strobe Flash N-Channel Logic Level IGBT
Typical Characteristics (Continued)
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Advance Information
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Design
This datasheet contains the design specifications for
product development. Specifications may change in
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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design.
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The datasheet is printed for reference information only.
Rev. I16
6
FGW15N40A Rev. A2
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FGW15N40A Strobe Flash N-Channel Logic Level IGBT
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