IXYS IXFH26N55Q Hiperfet power mosfets q-class Datasheet

Advanced Technical Information
IXFH 26N55Q
IXFT 26N55Q
HiPerFETTM
Power MOSFETs
Q-Class
VDSS
= 550 V
= 26 A
ID25
RDS(on) = 0.23 Ω
trr ≤ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
550
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
550
V
VGS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC = 25°C
IDM
TC = 25°C, pulse width limited by TJM
IAR
EAR
26
A
104
A
TC = 25°C
26
A
TC = 25°C
50
mJ
2.0
J
20
V/ns
375
W
-55 to +150
°C
TJM
150
°C
Tstg
-55 to +150
°C
300
°C
EAS
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
PD
TC = 25°C
TJ
TL
1.6 mm (0.063 in) from case for 10 s
Md
Mounting torque
Weight
TO-247
TO-268
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 4 mA
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
1.13/10 Nm/lb.in.
6
4
g
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ.
max.
550
4.5
V
±100
nA
TJ = 25°C
TJ = 125°C
25
1
µA
mA
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
0.23
Ω
© 2003 IXYS All rights reserved
2.5
V
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
(TAB)
S
G = Gate
D
= Drain
S = Source TAB = Drain
Features
z
IXYS advanced low Qg process
z
Low gate charge and capacitances
- easier to drive
- faster switching
z
International standard packages
z
Low RDS (on)
z
Rated for unclamped Inductive load
switching (UIS) rated
z
Molding epoxies meet UL 94 V-0
flammability classification
Advantages
z
Easy to mount
z
Space savings
z
High power density
DS99001(01/03)
IXFH 26N55Q
IXFT 26N55Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 20 V; ID = 0.5 • ID25, pulse test
16
22
S
3000
pF
420
pF
Crss
120
pF
td(on)
17
ns
18
ns
50
ns
tf
13
ns
Qg(on)
92
nC
22
nC
44
nC
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
td(off)
RG
Qgs
= 2.0 Ω (External),
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCK
0.33
(TO-247)
Source-Drain Diode
0.25
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
QRM
IRM
K/W
IF = IS, -di/dt = 100 A/µs, VR = 100 V
26
A
104
A
1.5
V
250
ns
µC
A
1.0
10
TO-247 AD (IXFH) Outline
1
2
3
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
∅P
Q
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
R
S
4.32
6.15
5.49
BSC
.170
242
.216
BSC
TO-268 Outline
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
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