Fairchild FQB9N50CF 500v n-channel mosfet Datasheet

FRFET
TM
FQB9N50CF
500V N-Channel MOSFET
Features
Description
• 9A, 500V, RDS(on) = 0.85 Ω @VGS = 10 V
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
• Low gate charge ( typical 28nC)
• Low Crss ( typical 24pF)
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts
based on half bridge topology.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
D
G
G
D2-PAK
S
FQB Series
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
IDM
Drain Current
- Pulsed
- Continuous (TC = 100°C)
(Note 1)
FQB9N50CF
Units
500
V
9
A
5.7
A
36
A
± 30
V
300
mJ
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
5
A
EAR
Repetitive Avalanche Energy
(Note 1)
9.6
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation (TC = 25°C)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
- Derate above 25°C
4.5
V/ns
173
W
1.38
W/°C
-55 to +150
°C
300
°C
Thermal Characteristics
Symbol
Parameter
FQB9N50CF
Units
0.72
°C/W
Thermal Resistance, Junction-to-Ambient*
40
°C/W
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
RθJC
Thermal Resistance, Junction-to-Case
RθJA
RθJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2006 Fairchild Semiconductor Corporation
FQB9N50CF Rev. A
1
www.fairchildsemi.com
FQB9N50CF 500V N-Channel MOSFET
October 2006
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQB9N50CF
FQB9N50CFTM
D2-PAK
330mm
24mm
800
FQB9N50CFS
FQB9N50CFTM_WS
D2-PAK
330mm
24mm
800
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
500
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS/
∆TJ
Breakdown Voltage Temperature Coefficient
ID = 250 µA, Referenced to 25°C
--
0.57
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
--
--
10
µA
VDS = 400 V, TC = 125°C
--
--
100
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
--
0.7
0.85
Ω
--
6.5
--
S
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 4.5A
gFS
Forward Transconductance
VDS = 40 V, ID = 4.5 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
790
1030
pF
--
130
170
pF
--
24
30
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250 V, ID = 9A,
RG = 25 Ω
(Note 4, 5)
VDS = 400 V, ID = 9A,
VGS = 10 V
(Note 4, 5)
--
18
45
ns
--
65
140
ns
--
93
195
ns
--
64
125
ns
--
28
35
nC
--
4
--
nC
--
15
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
9
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
36
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 9 A
--
--
1.4
V
trr
Reverse Recovery Time
--
100
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 9 A,
dIF / dt = 100 A/µs
--
300
--
nC
(Note 4)
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 8mH, IAS = 9A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 9A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
FQB9N50CF Rev. A
2
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FQB9N50CF 500V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
ID, Drain Current [A]
1
10
o
150 C
ID, Drain Current [A]
1
10
0
10
o
-55 C
o
25 C
0
10
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 40V
2. 250µ s Pulse Test
-1
-1
10
-1
0
10
10
1
10
10
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
VGS = 10V
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
2.0
1.5
1.0
VGS = 20V
0.5
※ Note : TJ = 25℃
1
10
0
10
150℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
25℃
-1
0
5
10
15
20
10
25
0.2
0.4
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
2000
1.0
1.2
1.4
12
VGS, Gate-Source Voltage [V]
1600
Capacitance [pF]
0.8
Figure 6. Gate Charge Characteristics
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
1200
0.6
VSD, Source-Drain voltage [V]
Coss
800
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
Crss
400
VDS = 100V
10
VDS = 250V
8
VDS = 400V
6
4
2
※ Note : ID = 9A
0
-1
10
0
0
10
1
10
5
10
15
20
25
30
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
FQB9N50CF Rev. A
0
3
www.fairchildsemi.com
FQB9N50CF 500V N-Channel MOSFET
Typical Performance Characteristics
FQB9N50CF 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.9
0.8
-100
-50
0
50
100
150
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 4.5 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
TJ, Junction Temperature [ C]
o
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
10
2
10
10 µs
10ms
100ms
DC
Operation in This Area
is Limited by R DS(on)
0
10
ID, Drain Current [A]
10
ID, Drain Current [A]
8
100 µs
1ms
1
-1
* Notes :
o
1. TC = 25 C
10
6
4
2
o
2. TJ = 150 C
3. Single Pulse
-2
10
10
0
10
1
2
10
10
0
25
3
50
75
100
125
150
o
VDS, Drain-SourceVoltage[V]
TC, Case Temperature [ C]
Figure 11. Transient Thermal Response Curve
10
0
Z? JC(t), Thermal Response
D=0.5
0.2
10
-1
0.1
0.05
PDM
0.02
t1
t2
* Notes :
0
1. ZθJC(t) = 0.72 C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.01
10
-2
single pulse
-5
10
-4
10
10
-3
10
-2
10
-1
10
0
10
1
t1, Square Wave Pulse Duration [sec]
FQB9N50CF Rev. A
4
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FQB9N50CF 500V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQB9N50CF Rev. A
5
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FQB9N50CF 500V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQB9N50CF Rev. A
6
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FQB9N50CF 500V N-Channel MOSFET
Mechanical Dimensions
D2-PAK
Dimensions in Millimeters
FQB9N50CF Rev. A
7
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Advance Information
Formative or In
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This datasheet contains the design specifications for
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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The datasheet is printed for reference information only.
Rev. I20
8
FQB9N50CF Rev. A
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FQB9N50CF 500V N-Channel MOSFET
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