DIODES ZXTN25012EZ

ZXTN25012EZ
12V NPN high gain transistor in SOT89
Summary
BVCEO > 12V
BVECX > 6V
hFE > 500
IC(cont) = 6.5A
VCE(sat) < 38mV @ 1A
RCE(sat) = 25m⍀
PD = 2.4W
Complementary part number ZXTP25012EZ
Description
C
Packaged in the SOT89 outline this new ultra high gain, low saturation
12V NPN transistor offers extremely low on state losses making it ideal
for use in DC-DC circuits and various driving and power management
functions
B
Features
E
•
6.5A continuous current
•
Up to 15A peak current
•
Very low saturation voltages
•
6V reverse blocking voltage
Applications
E
•
LED driving
•
Motor driving
•
Boost converters
•
Royer converters
•
Camera strobe
•
MOSFET gate drivers
C
C
B
Pinout - top view
Ordering information
Device
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
7
12
1000
ZXTN25012EZTA
Device marking
1K7
Issue 1 - December 2007
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ZXTN25012EZ
Absolute maximum and thermal ratings
Parameter
Symbol
Limit
Unit
Collector-Base voltage
VCBO
20
V
Collector-Emitter voltage
VCEO
12
V
Emitter-Collector voltage (reverse blocking)
VECX
6
V
Emitter-Base voltage
VEBO
7
V
Continuous Collector current(c)
IC
6.5
A
Base current
IB
1
A
Peak pulse current
ICM
15
A
Power dissipation at TA =25°C(a)
PD
1.1
W
8.8
mW/°C
1.8
W
14.4
mW/°C
2.4
W
19.2
mW/°C
4.46
W
35.7
mW/°C
19.2
W
153
mW/°C
Tj, Tstg
-55 to +150
°C
Symbol
Limit
Unit
Junction to ambient(a)
R⍜JA
117
°C/W
Junction to ambient(b)
R⍜JA
68
°C/W
Junction to ambient(c)
R⍜JA
51
°C/W
Junction to ambient(d)
R⍜JA
28
°C/W
Junction to case(e)
R⍜JC
7.95
°C/W
Linear derating factor
PD
Power dissipation at TA =25°C(b)
Linear derating factor
PD
Power dissipation at TA =25°C(c)
Linear derating factor
PD
Power dissipation at TA =25°C(d)
Linear derating factor
PD
Power dissipation at TC =25°C(e)
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(d) As (c) above measured at t<5 seconds.
(e) Junction to case (collector tab). Typical
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ZXTN25012EZ
Thermal characteristics
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ZXTN25012EZ
Thermal characteristics
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ZXTN25012EZ
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Collector-Base breakdown
voltage
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
(reverse blocking)
Symbol
BVCBO
Min.
20
Typ.
40
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Base breakdown
voltage
Collector-Base cut-off
current
BVCEO
12
17
V
IC = 10mA (*)
BVECX
6
8
V
IE = 100mA, RBC < 1kΩ
or
0.25V > VBC > -0.25V
BVECO
4.5
5.5
V
IE = 100μA
BVEBO
7
8.3
V
IE = 100μA
Collector-Emitter cut-off
current
ICEX
Emitter cut-off current
IEBO
Collector-Emitter
saturation voltage
<1
Max.
Unit
V
Conditions
IC = 100μA
50
0.5
nA
μA
VCB = 20V
VCB = 20V, Tamb= 100°C
100
nA
VCE = 20V, RBE < 1kΩ or
-1V < VBE < 0.25V
<1
50
nA
VEB = 5.6V
VCE(sat)
31
50
70
90
200
38
60
85
130
270
mV
mV
mV
mV
mV
IC = 1A, IB = 100mA(*)
IC = 1A, IB = 10mA(*)
IC = 2A, IB = 40mA(*)
IC = 2A, IB = 20mA(*)
IC = 6.5A, IB = 130mA(*)
Base-Emitter saturation
voltage
Base-Emitter turn-on
voltage
Static forward current
transfer ratio
VBE(sat)
950
1050
mV
IC = 6.5A, IB = 130mA(*)
VBE(on)
840
950
mV
IC = 6.5A, VCE = 2V(*)
800
750
250
50
1500
Transition frequency
fT
260
Input capacitance
Cibo
137
Output capacitance
Cobo
25
ICBO
hFE
500
500
185
30
IC = 10mA, VCE = 2V(*)
IC = 1A, VCE = 2V(*)
IC = 6.5A, VCE = 2V(*)
IC = 15A, VCE = 2V(*)
MHz
IC = 50mA, VCE = 10V
f = 100MHz
250
pF
VEB = 0.5V, f = 1MHz(*)
35
pF
VCB = 10V, f = 1MHz(*)
Delay time
td
71
ns
Rise time
tr
70
ns
Storage time
ts
233
ns
Fall time
tf
72
ns
IC = 1A, VCC = 10V,
IB1 =-IB2 = 10mA
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
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ZXTN25012EZ
Typical characteristics
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ZXTN25012EZ
Package outline - SOT89
D
A
C
D1
E
H
E1
L
B
e
B1
DIM
e1
Millimeters
Inches
Min
Max
Min
Max
A
1.40
1.60
0.550
0.630
B
0.44
0.56
0.017
B1
0.36
0.48
C
0.35
D
D1
DIM
Millimeters
Inches
Min
Max
Min
Max
E
2.29
2.60
0.090
0.102
0.022
E1
2.13
2.29
0.084
0.090
0.014
0.019
e
1.50 BSC
0.059 BSC
0.44
0.014
0.017
e1
3.00 BSC
0.118 BSC
4.40
4.60
0.173
0.181
H
3.94
4.25
0.155
0.167
1.52
1.83
0.064
0.072
L
0.89
1.20
0.035
0.047
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXTN25012EZ
Definitions
Product change
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The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is
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1. are intended to implant into the body
or
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Product status key:
“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
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Production has been discontinued
Datasheet status key:
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This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
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© 2007 Published by Zetex Semiconductors plc
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