SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR FZT849 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 80 Collector-Emitter Breakdown Voltage V(BR)CER Collector-Emitter Breakdown Voltage UNIT CONDITIONS. 120 V IC=100µA 80 120 V IC=1µA, RB ≤1kΩ V(BR)CEO 30 40 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 6 8 V IE=100µA Collector Cut-Off Current ICBO 50 1 µA nA VCB=70V VCB=70V, Tamb=100°C Collector Cut-Off Current ICER R ≤1kΩ 50 1 nA µA VCB=70V VCB=70V, Tamb=100°C Emitter Cut-Off Current IEBO 10 nA VEB=6V Collector-Emitter Saturation Voltage VCE(sat) 50 110 215 350 mV mV mV mV IC=0.5A, IB=20mA* IC=1A, IB=20mA* IC=2A, IB=20mA* IC=6.5A, IB=300mA* 1.2 V IC=6.5A, IB=300mA 35 67 168 MAX. Base-Emitter Saturation Voltage VBE(sat) Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE Transition Frequency fT 100 MHz IC=100mA, VCE=10V f=50MHz Output Capacitance Cobo 75 pF VCB=10V, f=1MHz* Switching Times ton toff 45 630 ns ns IC=1A, IB1=100mA IB2=100mA, VCC=10V 1.13 100 100 100 30 200 200 150 65 V IC=6.5A, VCE=1V* PARTMARKING DETAILS COMPLEMENTARY TYPE - E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 6 V Peak Pulse Current ICM 20 A Continuous Collector Current IC 7 A Power Dissipation at Tamb=25°C Ptot 3 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 inch square minimum *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 258 C FZT849 FZT949 IC=10mA, VCE=1V IC=1A, VCE=1V* IC=7A, VCE=1V* IC=20A, VCE=2V* 300 FZT849 ISSUE 3 - JANUARY 1996 FEATURES * Extremely low equivalent on-resistance; RCE(sat)36mΩ at 5A * 7 Amp continuous collector current (20 Amp peak) * Very low saturation voltages * Excellent gain charateristics specified upto 20 Amp * Ptot =3 Watts 3 - 257 SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR FZT849 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 80 Collector-Emitter Breakdown Voltage V(BR)CER Collector-Emitter Breakdown Voltage UNIT CONDITIONS. 120 V IC=100µA 80 120 V IC=1µA, RB ≤1kΩ V(BR)CEO 30 40 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 6 8 V IE=100µA Collector Cut-Off Current ICBO 50 1 µA nA VCB=70V VCB=70V, Tamb=100°C Collector Cut-Off Current ICER R ≤1kΩ 50 1 nA µA VCB=70V VCB=70V, Tamb=100°C Emitter Cut-Off Current IEBO 10 nA VEB=6V Collector-Emitter Saturation Voltage VCE(sat) 50 110 215 350 mV mV mV mV IC=0.5A, IB=20mA* IC=1A, IB=20mA* IC=2A, IB=20mA* IC=6.5A, IB=300mA* 1.2 V IC=6.5A, IB=300mA 35 67 168 MAX. Base-Emitter Saturation Voltage VBE(sat) Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE Transition Frequency fT 100 MHz IC=100mA, VCE=10V f=50MHz Output Capacitance Cobo 75 pF VCB=10V, f=1MHz* Switching Times ton toff 45 630 ns ns IC=1A, IB1=100mA IB2=100mA, VCC=10V 1.13 100 100 100 30 200 200 150 65 V IC=6.5A, VCE=1V* PARTMARKING DETAILS COMPLEMENTARY TYPE - E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 6 V Peak Pulse Current ICM 20 A Continuous Collector Current IC 7 A Power Dissipation at Tamb=25°C Ptot 3 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 inch square minimum *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 258 C FZT849 FZT949 IC=10mA, VCE=1V IC=1A, VCE=1V* IC=7A, VCE=1V* IC=20A, VCE=2V* 300 FZT849 ISSUE 3 - JANUARY 1996 FEATURES * Extremely low equivalent on-resistance; RCE(sat)36mΩ at 5A * 7 Amp continuous collector current (20 Amp peak) * Very low saturation voltages * Excellent gain charateristics specified upto 20 Amp * Ptot =3 Watts 3 - 257 FZT849 TYPICAL CHARACTERISTICS 1.6 0.8 300 0.4 IC/IB=10 V IC/IB=50 0.2 - Typical Gain 0.6 1.2 1.0 200 0.8 VCE=5V 0.6 VCE=1V 100 h - Normalised Gain - (Volts) 1.4 0.4 h 0.2 0 0 0.01 0.1 1 100 10 0.01 IC - Collector Current (Amps) 0.1 100 10 1 IC - Collector Current (Amps) VCE(sat) v IC hFE v IC VCE=1V - (Volts) 2.0 1.5 IC/IB=10 IC/IB=50 1.5 V - (Volts) 2.0 1.0 V 1.0 0.5 0.5 0.001 0.01 0.1 1 10 100 IC - Collector Current (Amps) Single Pulse Test at Tamb=25°C I - Collector Current (Amps) 10 D.C. 1s 100ms 10ms 1.0ms 0.1ms 0.1 1 0.1 1 VBE(on) v IC 100 0.1 0.01 10 VCE - Collector Voltage (Volts) 10 IC - Collector Current (Amps) VBE(sat) v IC 1 0.001 100 Safe Operating Area 3 - 259 100