DIODES ZVP3306F

ZVP3306F
TYPICAL CHARACTERISTICS
-4
-2
-200mA
0
-100mA
V
Drain Source
-6
0
-2
-4
-6
-8
I - Drain Current (Amps)
ID=
-400mA
-8
-0.8
-12V
-0.6
0
f=1MHz
Ciss
20
Coss
10
Crss
S
G
V
0
0
-10
-20
-30
-40
-50
-60
1
-8
-10
Note:ID=- 0.2A
0
VDS=
-20V-40V -60V
-4
-6
-8
-10
-12
-14
-16
0
0.5
1.0
1.5
Q-Gate Charge (nC)
Gate charge v gate-source voltage
2.6
-6V
-7V
-10V
-15V
10
-20V
1
-100
Normalised R
VGS=-5V
and V
100
-1000
ID-Drain Current (mA)
On-resistance vs Drain Current
VGS=-10V
ID=0.37A
2.0
VGS=VDS
ID=-1mA
1.0
0.6
-40 -20
0
20
40
60
80 100 120 140 160 180
Junction Temperature (°C)
Normalised RDS(on) and VGS(th) vs Temperature
3 - 435
ISSUE 3 – JANUARY 1996
FEATURES
* 60 Volt VDS
* RDS(on)=14Ω
D
S
PARTMARKING DETAIL – ML
COMPLEMENTARY TYPE – ZVN3306F
G
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS
-60
V
Continuous Drain Current at Tamb=25°C
ID
-90
mA
Pulsed Drain Current
IDM
-1.6
A
Gate Source Voltage
VGS
± 20
V
330
mW
-55 to +150
°C
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
-2
-70
Capacitance v drain-source voltage
RDS(on)-Drain Source On Resistance Ω
-6
2
VDS-Drain Source Voltage (Volts)
-10
-4
Saturation Characteristics
-Gate Source Voltage (Volts)
Note:VGS=0V
30
-2
VDS - Drain Source Voltage (Volts)
60
40
-7V
-6V
-5V
-4.5V
0
Voltage Saturation Characteristics
50
-9V
-8V
-0.2
-10
ZVP3306F
-10V
-0.4
VGS-Gate Source Voltage (Volts)
C-Capacitance (pF)
VGS=
-16V
-14V
-1.0
-10
SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
-60
Gate-Source Threshold
Voltage
VGS(th)
-1.5
-3.5
V
ID=-1mA, VGS=0V
V
ID=-1mA, VDS= VGS
Gate-Body Leakage
IGSS
20
nA
VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current
IDSS
-0.5
-50
µA
µA
VDS=-60 V, VGS=0V
VDS=-48 V, VGS=0V, T=125°C(2)
On-State Drain Current(1)
ID(on)
mA
VDS=-18 V, VGS=-10V
Static Drain-Source On-State
Resistance (1)
RDS(on)
Ω
VGS=-10V, ID=-200mA
Forward Transconductance
(1)(2)
gfs
mS
VDS=-18V, ID=-200mA
Input Capacitance (2)
Ciss
50
pF
Common Source Output
Capacitance (2)
Coss
25
pF
Reverse Transfer Capacitance (2) Crss
8
pF
Turn-On Delay Time (2)(3)
td(on)
8
ns
Rise Time (2)(3)
tr
8
ns
Turn-Off Delay Time (2)(3)
td(off)
8
ns
Fall Time (2)(3)
tf
8
ns
-400
14
60
VDS=-18V, VGS=0V, f=1MHz
VDD ≈ -18V, ID=-200mA
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 -434
ZVP3306F
TYPICAL CHARACTERISTICS
-4
-2
-200mA
0
-100mA
V
Drain Source
-6
0
-2
-4
-6
-8
I - Drain Current (Amps)
ID=
-400mA
-8
-0.8
-12V
-0.6
0
f=1MHz
Ciss
20
Coss
10
Crss
S
G
V
0
0
-10
-20
-30
-40
-50
-60
1
-8
-10
Note:ID=- 0.2A
0
VDS=
-20V-40V -60V
-4
-6
-8
-10
-12
-14
-16
0
0.5
1.0
1.5
Q-Gate Charge (nC)
Gate charge v gate-source voltage
2.6
-6V
-7V
-10V
-15V
10
-20V
1
-100
Normalised R
VGS=-5V
and V
100
-1000
ID-Drain Current (mA)
On-resistance vs Drain Current
VGS=-10V
ID=0.37A
2.0
VGS=VDS
ID=-1mA
1.0
0.6
-40 -20
0
20
40
60
80 100 120 140 160 180
Junction Temperature (°C)
Normalised RDS(on) and VGS(th) vs Temperature
3 - 435
ISSUE 3 – JANUARY 1996
FEATURES
* 60 Volt VDS
* RDS(on)=14Ω
D
S
PARTMARKING DETAIL – ML
COMPLEMENTARY TYPE – ZVN3306F
G
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS
-60
V
Continuous Drain Current at Tamb=25°C
ID
-90
mA
Pulsed Drain Current
IDM
-1.6
A
Gate Source Voltage
VGS
± 20
V
330
mW
-55 to +150
°C
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
-2
-70
Capacitance v drain-source voltage
RDS(on)-Drain Source On Resistance Ω
-6
2
VDS-Drain Source Voltage (Volts)
-10
-4
Saturation Characteristics
-Gate Source Voltage (Volts)
Note:VGS=0V
30
-2
VDS - Drain Source Voltage (Volts)
60
40
-7V
-6V
-5V
-4.5V
0
Voltage Saturation Characteristics
50
-9V
-8V
-0.2
-10
ZVP3306F
-10V
-0.4
VGS-Gate Source Voltage (Volts)
C-Capacitance (pF)
VGS=
-16V
-14V
-1.0
-10
SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
-60
Gate-Source Threshold
Voltage
VGS(th)
-1.5
-3.5
V
ID=-1mA, VGS=0V
V
ID=-1mA, VDS= VGS
Gate-Body Leakage
IGSS
20
nA
VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current
IDSS
-0.5
-50
µA
µA
VDS=-60 V, VGS=0V
VDS=-48 V, VGS=0V, T=125°C(2)
On-State Drain Current(1)
ID(on)
mA
VDS=-18 V, VGS=-10V
Static Drain-Source On-State
Resistance (1)
RDS(on)
Ω
VGS=-10V, ID=-200mA
Forward Transconductance
(1)(2)
gfs
mS
VDS=-18V, ID=-200mA
Input Capacitance (2)
Ciss
50
pF
Common Source Output
Capacitance (2)
Coss
25
pF
Reverse Transfer Capacitance (2) Crss
8
pF
Turn-On Delay Time (2)(3)
td(on)
8
ns
Rise Time (2)(3)
tr
8
ns
Turn-Off Delay Time (2)(3)
td(off)
8
ns
Fall Time (2)(3)
tf
8
ns
-400
14
60
VDS=-18V, VGS=0V, f=1MHz
VDD ≈ -18V, ID=-200mA
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 -434