Microsemi APT15S20KCT High voltage schottky diode Datasheet

1
3
TO-220
2
1 - Anode 1
2 - Common Cathode
Back of Case - Cathode
3 - Anode 2
APT15S20KCT(G)
1
200V
2X25A
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
3
2
HIGH VOLTAGE SCHOTTKY DIODE
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Parallel Diode
• Ultrafast Recovery Times
• Low Losses
• Soft Recovery Characteristics
• Low Noise Switching
• Popular TO-220 Package
• Cooler Operation
• Low Forward Voltage
• Higher Reliability Systems
• High Blocking Voltage
• Increased System Power
•
•
•
•
•
-Switchmode Power Supply
-Inverters
Free Wheeling Diode
-Motor Controllers
-Converters
Snubber Diode
Uninterruptible Power Supply (UPS)
48 Volt Output Rectifiers
High Speed Rectifiers
• Low Leakage Current
All Ratings Are Per Leg: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
VR
Characteristic / Test Conditions
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 122°C, Duty Cycle = 0.5)
IFSM
TJ,TSTG
APT15S20KCT(G)
UNIT
200
Volts
Maximum D.C. Reverse Voltage
VRRM
IF(RMS)
Density
25
RMS Forward Current (Square wave, 50% duty)
63
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
110
Amps
-55 to 150
Operating and StorageTemperature Range
TL
Lead Temperature for 10 Sec.
300
EVAL
Avalanche Energy (2A, 8mH)
15
°C
mJ
STATIC ELECTRICAL CHARACTERISTICS
Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance, VR = 200V
TYP
MAX
IF = 15A
.80
.83
IF = 30A
.91
IF = 15A, TJ = 125°C
.67
VR = VR Rated
Microsemi Website - http://www.microsemi.com
Volts
.250
VR = VR Rated, TJ = 125°C
5.0
75
UNIT
mA
pF
11-2008
VF
MIN
053-6037 Rev C
Symbol
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Time
Qrr
Reverse Recovery Charge
80
-
210
-
5
-
100
ns
-
440
nC
-
8
-
55
-
580
-
18
MIN
TYP
VR = 133V, TC = 25°C
IF = 15A, diF/dt = -200A/μs
VR = 133V, TC = 125°C
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
-
Maximum Reverse Recovery Current
trr
IRRM
TYP
IF = 15A, diF/dt = -200A/μs
IF = 15A, diF/dt = -700A/μs
Maximum Reverse Recovery Current
VR = 133V, TC = 125°C
MAX
UNIT
MIN
ns
nC
-
-
Amps
Amps
ns
nC
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MAX
RθJC
Junction-to-Case Thermal Resistance
1.1
RθJA
Junction-to-Ambient Thermal Resistance
80
WT
Torque
Package Weight
oz
1.9
g
10
lb•in
1.1
N•m
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.7
0.6
0.5
Note:
0.4
0.3
0.2
0.1
0.05
0
10-5
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
1.2
0.8
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL
11-2008
Junction
temp (°C)
053-6037 Rev C
t1
t2
SINGLE PULSE
0.241 °C/W
0.000249 J/°C
0.858 °C/W
0.000678 J/°C
Power
(watts)
Case temperature (°C)
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
°C/W
0.07
Maximum Mounting Torque
1.0
UNIT
TYPICAL PERFORMANCE CURVE
APT15S20KCT(G)
140
60
TJ = 150°C
50
IF, FORWARD CURRENT
(A)
trr, REVERSE RECOVERY TIME
(ns)
TJ = -55°C
TJ = 25°C
40
TJ = 125°C
30
20
10
0
0.2
0.4
0.6
0.8
1
1.2
VF, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
1000
IRRM, REVERSE RECOVERY CURRENT
(A)
R
30A
800
600
15A
400
7.5A
200
0
200
400
600
800
-diF /dt, CURRENT RATE OF CHANGE (A/μs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
60
40
20
0
1.2
Qrr
1.0
IRRM
30A
R
20
15
10
7.5A
5
15A
400
600
800
-diF /dt, CURRENT RATE OF CHANGE (A/μs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
0
200
70
trr
Duty cycle = 0.5
T =150°C
J
60
Qrr
50
0.8
trr
0.6
T =125°C
J
V =133V
0
0.4
IF(AV) (A)
Qrr, REVERSE RECOVERY CHARGE
(nC)
7.5A
80
25
T =125°C
J
V =133V
0
Kf, DYNAMIC PARAMETERS
(Normalized to 700A/μs)
15A
200
400
600
800
-diF /dt, CURRENT RATE OF CHANGE(A/μs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
1200
40
30
20
0.2
0.0
30A
R
100
0
0
T =125°C
J
V =133V
120
10
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
0
25
50
75
100
125
150
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
800
600
11-2008
400
200
0
.6
1
10
100 200
VR, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
053-6037 Rev C
CJ, JUNCTION CAPACITANCE
(pF)
1000
APT15S20KCT(G)
Vr
diF /dt Adjust
+18V
APT20M36BLL
0V
D.U.T.
30μH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
1
4
Zero
5
0.25 IRRM
3
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-220 Package Outline
053-6037 Rev C
11-2008
e3 100% Sn
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