SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS FZT605 ISSUE 4 - MARCH 2001 FEATURES * * C Guaranteed hFE Specified up to 2A Fast Switching E PARTMARKING DETAIL COMPLEMENTARY TYPES - FZT605 FZT705 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 140 V Collector-Emitter Voltage V CEO 120 V Emitter-Base Voltage V EBO 10 V Peak Pulse Current I CM Continuous Collector Current IC Power Dissipation P tot Operating and Storage Temperature Range T j :T stg 4 A 1.5 A 2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V (BR)CBO 140 V I C=100 µ A Collector-Emitter Breakdown Voltage V (BR)CEO 120 V I C=10mA* Emitter-Base Breakdown Voltage V (BR)EBO 10 V I E=100 µ A Collector Cut-Off Current I CBO 0.01 10 µA µA V CB=120V V CB=120V, T amb =100°C Emitter Cut-Off Current I EBO 0.1 µA V EB=8V Collector-Emitter Cut-Off Current I CES 10 µA V CES=120V Collector-Emitter Saturation Voltage V CE(sat) 1.0, 1.5 V V I C=250mA, I B=0.25mA* I C=1A, I B=1mA* Base-Emitter Saturation Voltage V BE(sat) 1.8 V I C=1A, I B=1mA* Base-Emitter Turn-On Voltage V BE(on) 1.7 V I C =1A, V CE=5V* Static Forward Current Transfer Ratio h FE 2K 5K 2K 100K 0.5K Transition Frequency ft 150 MHz I C=100mA, V CE=10V f=20MHz V EB=500mV, f=1MHz I C=50mA, V CE=5V I C=500mA, V CE=5V* I C=1A, V CE=5V* I C=2A, V CE=5V* Input Capacitance C ibo 90 Typical pF Output Capacitance C obo 15 Typical pF VCB=10V, F=1MHz Switching Times t on 0.5 Typical nsec t off 1.6 Typical nsec I C=500mA, V CE=10V I B1=I B2=0.5mA * Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2% Spice parameter data is available upon request for these devices. TBA FZT605 TYPICAL CHARACTERISTICS -55°C +25°C +100°C +175°C VCE(sat) - (Volts) 1.6 1.4 2.5 1.2 IC/IB=100 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 hFE - Gain normalised to 1 Amp 1.8 -55°C +25°C +100°C 1.5 1.0 0.5 0.001 IC - Collector Current (Amps) 0.01 0.1 2.2 2.2 1.8 VBE - (Volts) VBE(sat) - (Volts) -55°C +25°C +100°C 2.0 1.6 1.4 1.2 IC/IB=100 1.0 0.8 0.6 1.6 1.4 1.2 1.0 VCE=5V 0.8 0.6 0.4 0.01 0.1 1 0.4 10 0.01 IC - Collector Current (Amps) 0.1 1 10 IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 10 IC-Collector Current (A) 10 IC-Collector Current (A) 10 hFE v IC -55°C +25°C +100°C +175°C 1.8 1 IC - Collector Current (Amps) VCE(sat) v IC 2.0 VCE=5V 2.0 1 DC 1s 100ms 10ms 1ms 100µs 0.1 0.01 1 10 100 1000 1 DC 1s 100ms 10ms 1ms 100µs 0.1 0.01 1 VCE - Collector Emitter Voltage (V) 10 100 VCE - Collector Emitter Voltage (V) FZT605 Safe Operating Area FZT604 Safe Operating Area 78 1000