DMN3005LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • Case: TO252-3L Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (approximate) D D G D G TOP VIEW S PIN OUT -TOP VIEW S Equivalent Circuit Ordering Information (Note 3) Part Number DMN3005LK3-13 Notes: Case TO252-3L Packaging 2500 / Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information N3005L YYWW DMN3005LK3 Document number: DS33318 Rev. 2 - 2 = Manufacturer’s Marking N3005L = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01 - 53) 1 of 6 www.diodes.com October 2010 © Diodes Incorporated DMN3005LK3 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) VGS = 10V Steady State Continuous Drain Current (Note 5) VGS = 10V Steady State TA = 25°C TA = 85°C TA = 25°C TA = 85°C Value 30 ±20 14.5 10.5 ID IDM 22 16 48 Symbol PD RθJA PD RθJA TJ, TSTG Value 1.68 74.3 4.1 30.8 -55 to +150 ID Pulsed Drain Current (Note 6) Unit V V A A A Thermal Characteristics Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) Operating and Storage Temperature Range Unit W °C/W W °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 30 - - 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1.0 1.5 2.0 V RDS (ON) - 3.6 4.9 5.0 6.5 mΩ |Yfs| VSD - 22 0.8 1.0 S V VDS = VGS, ID = 250μA VGS = 10V, ID = 20A VGS = 4.5V, ID = 20A VDS = 15V, ID = 15A VGS = 0V, IS = 20A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 4342 1801 669 1.76 46.9 14.3 18.6 7.9 22.8 73.4 43.5 - pF pF pF Ω nC nC nC ns ns ns ns VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 15V, ID = 15A VDS = 15V, VGS = 10V, RL = 1.3Ω RG = 3Ω 4. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided. 5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2oz. copper, single sided. 6. Repetitive rating, pulse width limited by junction temperature and current limited by package. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN3005LK3 Document number: DS33318 Rev. 2 - 2 2 of 6 www.diodes.com October 2010 © Diodes Incorporated DMN3005LK3 30 50 VGS = 4.5V VGS = 3.0V ID, DRAIN CURRENT(A) ID, DRAIN CURRENT (A) 40 VDS = 5.0V 25 VGS = 3.5V VGS = 2.8V 30 VGS = 2.5V 20 20 TA = 150°C 15 TA = 125°C TA = 85°C 10 TA = 25°C T A = -55°C 10 5 VGS = 1.8V VGS = 2.0V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig.1 Typical Output Characteristics 0.040 0.036 0.032 0.028 0.024 0.020 0.016 VGS = 2.5V 0.012 0.008 0.004 0 VGS = 4.5V 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 5 RDS(on) DRAIN SOURCE ON-RESISTANCE (Ω) RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE SOURCE VOLTAGE(V) Fig. 2 Typical Transfer Characteristics 4 0.012 VGS = 4.5V 0.010 0.008 TA = 150°C 0.006 TA = 125°C TA = 85°C 0.004 T A = 25°C TA = -55°C 0.002 0 30 0.010 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.0 0.009 RDS(ON), DRAIN-TO-SOURCE RESISTANCE (Ω) 0 0.008 0.007 0.006 0.005 0.004 VGS = 4.5A ID = 20A 0.003 0.002 0.001 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMN3005LK3 Document number: DS33318 Rev. 2 - 2 3 of 6 www.diodes.com 0.8 0.6 ID = 1mA 0.4 ID = 250µA 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 Gate Threshold Variation vs. Ambient Temperature October 2010 © Diodes Incorporated DMN3005LK3 10,000 20 f = 1MHz 18 Ciss C, CAPACITANCE (pF) IS, SOURCE CURRENT (A) 16 T A = 25°C 14 12 10 8 6 C oss 1,000 C rss 4 2 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Diode Forward Voltage vs. Current 100 1.2 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Typical Capacitance 30 IDSS, LEAKAGE CURRENT (nA) 1,000,000 100,000 T A = 150°C 10,000 TA = 125°C 1,000 TA = 85°C 100 10 TA = 25°C 1 0 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Drain-Source Leakage Current vs Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 76°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DMN3005LK3 Document number: DS33318 Rev. 2 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 10 Transient Thermal Response 4 of 6 www.diodes.com 10 100 1,000 October 2010 © Diodes Incorporated DMN3005LK3 Package Outline Dimensions E b3 L3 TO252-3L Dim Min Typ Max A 2.19 2.29 2.39 A1 0.97 1.07 1.17 b 0.64 0.76 0.88 b2 0.76 0.95 1.14 b3 5.21 5.33 5.50 C2 0.45 0.51 0.58 D 6.00 6.10 6.20 E 6.45 6.58 6.70 e 2.286 Typ. H 9.40 9.91 10.41 L 1.40 1.59 1.78 L3 0.88 1.08 1.27 L4 0.64 0.83 1.02 a 0° 10° All Dimensions in mm D b2 e L4 b A1 A H a SEATING PLANE L C2 Suggested Pad Layout X2 Y2 C Y1 X1 DMN3005LK3 Document number: DS33318 Rev. 2 - 2 Z Dimensions Z X1 X2 Y1 Y2 C E1 Value (in mm) 11.6 1.5 7.0 2.5 7.0 6.9 2.3 E1 5 of 6 www.diodes.com October 2010 © Diodes Incorporated DMN3005LK3 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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