NTE NTE2646 Silicon npn transistor general purpose amplifier, switch surface mount Datasheet

NTE2646
Silicon NPN Transistor
General Purpose Amplifier, Switch
Surface Mount
Features:
D Low Current
D Low Voltage
Applications:
D General Purpose Switching and Amplification
Absolute Maximum Ratings:
Collector−Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector−Emitter Voltage (Open Base), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V
Emitter−Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
DC Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Peak Base Current, IBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total Power Dissipation (TA = +25°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C
Thermal Resistance, Junction−to−Ambient (In free air, Note 1), RthJA . . . . . . . . . . . . . . . . . 625K/W
Note 1. Transistor mounted on a FR4 printed−circuit board.
Electrical Characteristics: (TA = +25 unless otherwise specified)
Parameter
Collector−Base Cut−Off Current
Symbol
ICBO
Test Conditions
Min
Typ
Max
Unit
VCB = 30V, IE = 0
−
−
15
nA
VCB = 30V, IE = 0, TJ = +150°C
−
−
5
µA
nA
Emitter−Base Cut−Off Current
IEBO
VEB = 5V, IC = 0
−
−
100
DC Current Gain
hFE
IC = 10µA, VCE = 5V
−
150
−
IC = 2mA, VCE = 5V
200
290
450
IC = 10mA, IB = 0.5mA
−
90
250
mV
IC = 10mA, IB = 5mA, Note 2
−
200
600
mV
IC = 10mA, IB = 0.5mA
−
700
−
mV
IC = 10mA, IB = 5mA, Note 2
−
900
−
mV
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
VCE(sat)
VBE(sat)
Note 2. Pulse Test: tp ≤ 300µs, δ ≤ 0.02.
Electrical Characteristics (Cont’d): (TA = +25 unless otherwise specified)
Parameter
Symbol
Base−Emitter Voltage
VBE
Test Conditions
Min
Typ
Max
Unit
IC = 2mA, VCE = 5V
580
660
700
mV
IC = 10mA, VCE = 5V
−
−
770
mV
−
−
3
pF
Collector Capacitance
Cc
VCB = 5V, IC = IE = 0, f = 1MHz
Transition Frequency
fT
VCE = 5V, IC = 10mA, f = 100MHz
100
−
−
MHz
Noise Figure
F
IC = 200µA, VCE = 5V, RS = 2kΩ,
f = 1kHz, B = 200Hz
−
−
10
dB
.014 (0.35)
C
B
.087
(2.2)
Max
E
.025 (0.65)
.051 (1.3)
.086 (2.2) Max
.051 (1.3)
.043 (1.1)
.003 (0.1)
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