DST847BPDP6 COMPLEMENTARY DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) “Green” Device (Note 2) Ultra Small Package Case: SOT-963 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0027 grams (approximate) • • • SOT-963 6 5 Q2 Q1 1 Top View 4 2 3 Device Schematic Ordering Information Device DST847BPDP6-7 Notes: Packaging SOT-963 Shipping 10,000/Tape & Reel 1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com Marking Information TC DST847BPDP6 Document number: DS32036 Rev. 1 - 2 TC = Product Type Marking Code 1 of 8 www.diodes.com January 2010 © Diodes Incorporated DST847BPDP6 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 3) Symbol VCBO VCEO VEBO IC Value 50(-50) 45(-45) 6.0(-5.0) 100 (-100) Unit V V V mA Value 250 500 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient (Note 3) Operating and Storage Temperature Range Notes: Symbol PD RθJA TJ, TSTG 3. Device mounted on FR-4 PCB with minimum recommended pad layout. r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA (t) = r(t) * R θJA RθJA = 370°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 1 Transient Thermal Response 100 1,000 0.4 Single Pulse 100 PD, POWER DISSIPATION (W) P(pk), PEAK TRANSIENT POWER (W) 1,000 10 RθJA(t) = r(t) * RθJA RθJA = 370°C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 10 1 0.1 0.01 0.3 Note 3 0.2 0.1 0 0.00001 0.001 0.1 10 1,000 t1, PULSE DURATION TIME (s) Fig. 2 Single Pulse Maximum Power Dissipation DST847BPDP6 Document number: DS32036 Rev. 1 - 2 2 of 8 www.diodes.com 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (°C) Fig. 3 Power Dissipation vs. Ambient Temperature January 2010 © Diodes Incorporated DST847BPDP6 Electrical Characteristics – Q1 NPN Transistor @TA = 25°C unless otherwise specified Characteristic (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Symbol V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO Min 50 50 45 6 Typical 150 150 65 8.35 Max - Unit V V V V nA ICBO - - 15 hFE 100 200 220 300 470 Collector-Emitter Saturation Voltage VCE(sat) - 50 122 125 300 Base-Emitter Saturation Voltage VBE(sat) - 760 880 1000 1100 Base-Emitter Voltage VBE(on) 580 650 725 750 800 fT 100 175 - Ccbo - 1.5 - DC Current Gain Current Gain-Bandwidth Product Collector-Base Capacitance Notes: Test Condition IC = 10μA, IB = 0 IC = 10μA, IB = 0 IC = 1mA, IB = 0 IE = 1μA, IC = 0 VCB = 30V IC = 10μA, VCE = 5V IC = 2.0mA, VCE = 5V IC = 10mA, IB = 0.5mA mV IC = 100mA, IB = 5.0mA IC = 10mA, IB = 0.5mA mV IC = 100mA, IB = 5.0mA IC = 2.0mA, VCE = 5V mV IC = 10mA, VCE = 5V VCE = 5V, IC = 10mA, MHz f = 100MHz pF VCB = 10V, f = 1.0MHz 4. Short duration pulse test used to minimize self-heating effect DST847BPDP6 Document number: DS32036 Rev. 1 - 2 3 of 8 www.diodes.com January 2010 © Diodes Incorporated DST847BPDP6 Typical Characteristics – Q1 NPN Transistor 0.16 IB = 1.8mA 450 IB = 2mA VCE = 5V IB = 1.6mA 0.14 400 IC, COLLECTOR CURRENT (A) IB = 1.4mA IB = 1.2mA IB = 1mA 0.10 IB = 0.8mA IB = 0.6mA 0.08 IB = 0.4mA 0.06 0.04 IB = 0.2mA TA = 100°C 300 250 TA = 25°C 200 150 T A = -55°C 100 0.02 0 TA = 150°C 350 hFE, DC CURRENT GAIN 0.12 50 0 0 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current 0.20 IC/IB = 10 1 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.18 0.16 0.14 0.12 0.10 TA = 150°C 0.08 T A = 100°C 0.06 0.04 TA = 25°C TA = 10°C 0.1 T A = 50°C TA = 100°C 0.01 0 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Collector-Emitter Saturation Voltage vs. Collector Current 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.0 VCE = 5V 0.8 TA = -55°C 0.6 T A = 25°C TA = 100°C 0.4 TA = 150°C 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Turn-On Voltage vs. Collector Current DST847BPDP6 Document number: DS32036 Rev. 1 - 2 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1 VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) TA = 20°C T A = -55°C 0.02 0.2 0.1 IC/IB = 20 4 of 8 www.diodes.com 1.1 1.0 0.9 0.8 TA = -55°C 0.7 T A = 25°C 0.6 0.5 TA = 100°C 0.4 T A = 150°C 0.3 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current January 2010 © Diodes Incorporated DST847BPDP6 Electrical Characteristics – Q2 PNP Transistor @TA = 25°C unless otherwise specified Characteristic (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage ICBO - Typical -100 -90 -65 -8.5 - hFE 100 200 340 330 470 Collector-Emitter Saturation Voltage VCE(sat) - -70 -300 -175 -500 Base-Emitter Saturation Voltage VBE(sat) - -1000 -1100 Base-Emitter Voltage VBE(on) -600 - -760 -885 -670 -715 fT 100 340 - - 2.0 - Collector Cutoff Current DC Current Gain Current Gain-Bandwidth Product Output Capacitance Notes: Symbol V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO Cobo Min -50 -50 -45 -6 Max - Unit V V V V -15 nA -780 -850 Test Condition IC = -10μA, IB = 0 IC = -10μA, IB = 0 IC = -1mA, IB = 0 IE = -1μA, IC = 0 VCB = -30V IC = -10μA, VCE = -5V IC = -2.0mA, VCE = -5V IC = -10mA, IB = -0.5mA mV IC = -100mA, IB = -5.0mA IC = -10mA, IB = -0.5mA mV IC = -100mA, IB = -5.0mA IC = -2.0mA, VCE = -5V mV IC = -10mA, VCE = -5V VCE = -5V, IC = -10mA, MHz f = 100MHz pF VCB = -10V, f = 1.0MHz 4. Short duration pulse test used to minimize self-heating effect. DST847BPDP6 Document number: DS32036 Rev. 1 - 2 5 of 8 www.diodes.com January 2010 © Diodes Incorporated DST847BPDP6 Typical Characteristics – Q2 PNP Transistor 0.18 1,000 IB = -2mA IB = -1.2mA 0.12 T A = 125°C TA = 85°C IB = -1.4mA IB = -1mA IB = -0.8mA 0.10 IB = -0.6mA 0.08 IB = -0.4mA 0.06 0.04 hFE, DC CURRENT GAIN -IC, COLLECTOR CURRENT (A) IB = -1.6mA 0.14 VCE = 5V T A = 150°C IB = -1.8mA 0.16 TA = 25°C TA = -55°C 100 IB = -0.2mA 0.02 0 0 10 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (A) Fig. 11 Typical DC Current Gain vs. Collector Current 1 2 3 4 5 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 10 Typical Collector Current vs. Collector-Emitter Voltage 1 1 IC/IB = 20 0.1 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 TA = 150°C TA = 125°C T A = 85°C T A = 25°C T A = -55°C 0.01 0.1 1.0 0.8 TA = -55°C 0.6 T A = 25°C T A = 85°C 0.4 T A = 150°C TA = 125°C 0.2 0 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 14 Typical Base-Emitter Turn-On Voltage vs. Collector Current DST847BPDP6 Document number: DS32036 Rev. 1 - 2 TA = 25°C TA = -55°C 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 13 Typical Collector-Emitter Saturation Voltage vs. Collector Current -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) VCE = -5V TA = 85°C T A = 125°C 0.01 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 12 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 TA = 150°C 0.1 6 of 8 www.diodes.com 1.2 IC/IB = 10 1.0 0.8 TA = -55°C 0.6 T A = 25°C TA = 85°C TA = 125°C 0.4 T A = 150°C 0.2 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 15 Typical Base-Emitter Saturation Voltage vs. Collector Current January 2010 © Diodes Incorporated DST847BPDP6 Package Outline Dimensions D e1 L E E1 e b (6 places) c A SOT-963 Dim Min Max Typ A 0.40 0.50 0.45 A1 0 0.05 C 0.120 0.180 0.150 D 0.95 1.05 1.00 E 0.95 1.05 1.00 E1 0.75 0.85 0.80 L 0.05 0.15 0.10 b 0.10 0.20 0.15 e 0.35 Typ e1 0.70 Typ All Dimensions in mm A1 Suggest Pad Layout C C Dimensions Value (in mm) C 0.350 X 0.200 Y 0.200 Y1 1.100 Y1 Y (6X) X (6X) DST847BPDP6 Document number: DS32036 Rev. 1 - 2 7 of 8 www.diodes.com January 2010 © Diodes Incorporated DST847BPDP6 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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