A Product Line of Diodes Incorporated Green ZDT6790 COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTOR IN SM-8 PACKAGE Features Mechanical Data • • • • • • • NPN Transistor BVCEO > 45 VCE(sat) < 100mV @ IC= 100mA Continuous Current IC = 2A PNP Transistor BVCEO > -40V VCE(sat) < 250mV @ IC= -500mA Continuous Current IC = -2A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability • • • Case: SM-8 (8 LEAD SOT223) Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.117 grams (approximate) SM-8 Top View Pin Out Top View Equivalent Circuit Ordering Information (Note 4) Part Number ZDT6790TA ZDT6790TC Notes: Marking T6790 T6790 Reel size (inches) 7 13 Tape width (mm) 12 12 Quantity per reel 1,000 4,000 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com Marking Information T6790 ZDT6790 Document number: DS33210 Rev. 2 - 2 T6790 = Product Type Marking Code 1 of 9 www.diodes.com July 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZDT6790 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current (Note 5) Symbol VCBO VCEO VEBO IC ICM NPN 45 45 6 2 6 PNP -50 -40 -6 -2 -6 Unit V V V A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Collector Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Leads Operating and Storage Temperature Range Notes: Symbol (Note 5) (Note 6) (Note 5) (Note 6) (Note 7) PD RθJA RθJL TJ,TSTG Value 2.25 2.75 55.60 45.50 30.68 -55 to +150 Unit W °C/W °C/W °C 5. For the device with any single die active, mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions . 6. For the device with both die active, mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). ZDT6790 Document number: DS33210 Rev. 2 - 2 2 of 9 www.diodes.com July 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZDT6790 Thermal Characteristics 10 RCE(SAT) Limited 1 DC 1s 100m 0.1 Limited 1 DC 1s 100ms 100m 100ms 10ms One active die Single Pulse 10m Tamb=25°C RCE(SAT) -IC Collector Current (A) IC Collector Current (A) 10 100us 1 10ms One active die Single Pulse 10m T amb=25°C 1ms 10 1ms 100us 0.1 VCE Collector-Emitter Voltage (V) 1 10 -VCE Collector-Emitter Voltage (V) NPN Safe Operating Area PNP Safe Operating Area 50 40 30 D=0.5 Single Pulse 20 D=0.2 D=0.05 10 D=0.1 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Max Power Dissipation (W) Thermal Resistance (°C/W) 3.0 Two active die 2.5 1.5 1.0 0.5 0.0 0 Transient Thermal Impedance Maximum Power (W) One active die 2.0 25 50 75 100 125 150 Temperature (°C) Derating Curve Single Pulse Tamb=25°C 100 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation ZDT6790 Document number: DS33210 Rev. 2 - 2 3 of 9 www.diodes.com July 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZDT6790 NPN - Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 8) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Symbol BVCBO BVCEO BVEBO ICBO IEBO Min 45 45 6 — — Typ — — — — — Max — — — 100 100 Unit V V V nA nA hFE 500 400 150 — — — — — — — Collector-Emitter Saturation Voltage (Note 8) VCE(sat) — — — — 100 500 mV Base-Emitter Saturation Voltage (Note 8) Base-Emitter Turn-on Voltage (Note 8) VBE(sat) VBE(on) — — — — 900 900 mV mV fT 150 — — MHz Cibo Cobo ton toff — — 200 16 33 1300 — — pF pF ns ns DC Current Transfer Static Ratio (Note 8) Transitional Frequency (Note 8) Input Capacitance Output Capacitance Switching Time Note: — — Test Condition IC = 100µA IC = 10mA IE = 100µA VCB = 35V VEB = 5V IC = 100mA, VCE = 2V IC = 1A, VCE = 2V IC = 2A, VCE = 2V IC = 100mA, IB = 0.5mA IC = 1A, IB = 5mA IC = 1A, IB = 10mA IC = 1A, VCE = 2V IC = 50mA, VCE = 5V, f = 50MHz VEB = 0.5V, f = 1MHz VCB = 10V, f = 1MHz VCC = 10V, IC = 500mA, IB1 = 50mA, IB2 = 50mA 8. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%. ZDT6790 Document number: DS33210 Rev. 2 - 2 4 of 9 www.diodes.com July 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZDT6790 NPN – Typical Electrical Characteristics 1.0 IC/IB=100 Tamb=25°C -55°C 0.8 IC/IB=200 VCE(SAT) (V) VCE(SAT) (V) 100m IC/IB=100 10m IC/IB=10 1m 1m 10m 100m 1 100°C 0.4 0.2 0.0 1m 10 IC Collector Current (A) 25°C 0.6 10m 100m 1 IC Collector Current (A) VCE(SAT) v IC VCE(SAT) v IC 1000 VCE=2V 900 0.8 25°C 0.6 -55°C 0.4 0.2 0.0 1m 10m 100m 1 IC Collector Current (A) 1.0 VBE(SAT) (V) 100°C 1.0 800 700 600 500 400 300 200 100 0 10 Typical Gain (hFE) Normalised Gain 1.2 0.8 VBE(ON) (V) 0.8 -55°C 25°C 0.6 100°C 0.4 1m hFE v IC 1.0 IC/IB=100 10m 100m 1 IC Collector Current (A) 10 VBE(SAT) v IC VCE=2V -55°C 25°C 0.6 100°C 0.4 1m 10m 100m 1 IC Collector Current (A) 10 VBE(ON) v IC ZDT6790 Document number: DS33210 Rev. 2 - 2 5 of 9 www.diodes.com July 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZDT6790 PNP - Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Notes 8) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Symbol BVCBO BVCEO BVEBO ICBO IEBO Min -50 -40 -6 — — Typ — — — — — Max — — — -100 -100 — — — — 800 hFE 300 250 200 150 Collector-Emitter Saturation Voltage (Notes 8) VCE(sat) — — — — -250 -450 -750 mV Base-Emitter Saturation Voltage (Notes 8) Base-Emitter Turn-on Voltage (Notes 8) VBE(sat) VBE(on) — — — -750 -1000 — mV mV fT 100 — — MHz Cibo Cobo ton toff — — 225 24 35 600 — — pF pF ns ns DC Current Transfer Static Ratio (Notes 8) Transitional Frequency (Notes 8) Input Capacitance Output Capacitance Switching Time Notes: — — — — — Unit V V V nA nA — Test Condition IC = -100µA IC = -10mA IE = -100µA VCB = -30V VEB = -5V IC = -10mA, VCE = -2V IC = -500mA, VCE = -2V IC = -1A, VCE = -2V IC = -2A, VCE = -2V IC = -500mA, IB = -5mA IC = -1A, IB = -10mA IC = -2A, IB = -50mA IC = -1A, IB = -10mA IC = -1A, VCE = -2V IC = -50mA, VCE = -5V, f = 50MHz VEB = -0.5V, f = 1MHz, VCB = -10V, f = 1MHz, VCC = -10V, IC = -500mA, IB1 = -50mA, IB2 = -50mA 8. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%. ZDT6790 Document number: DS33210 Rev. 2 - 2 6 of 9 www.diodes.com July 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZDT6790 PNP – Typical Electrical Characteristics 1.0 1 IC/IB=100 -VCE(SAT) (V) -VCE(SAT) (V) Tamb=25°C 100m IC/IB=100 10m IC/IB=40 0.8 -55°C 0.6 25°C 0.4 100°C 0.2 IC/IB=10 1m 10m 100m 1 0.0 1m 10 -IC Collector Current (A) 10m 450 25°C 360 0.6 270 0.4 180 -55°C 0.2 0.0 1m 90 10m 100m 1 -IC Collector Current (A) 1.0 0 10 -VBE(SAT) (V) 540 1.0 0.8 630 Typical Gain (hFE) Normalised Gain 1.2 VCE=-2V 100°C -VBE(ON) (V) IC/IB=100 0.8 -55°C 0.6 25°C 100°C 0.4 1m hFE v IC 1.0 1 VCE(SAT) v IC VCE(SAT) v IC 1.4 100m -IC Collector Current (A) 10m 100m 1 -IC Collector Current (A) 10 VBE(SAT) v IC VCE=-2V 0.8 -55°C 0.6 25°C 0.4 0.2 1m 100°C 10m 100m 1 -IC Collector Current (A) 10 VBE(ON) v IC ZDT6790 Document number: DS33210 Rev. 2 - 2 7 of 9 www.diodes.com July 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZDT6790 Package Outline Dimensions E A E1 A1 b D e e1 Pin #1 15° 45° SM-8 Dim Min Max Typ A 1.7 − − A1 0.02 0.1 − b 0.7 − − c 0.24 0.32 − D 6.3 6.7 − e 1.53 − − e1 4.59 − − E 6.7 7.3 − E1 3.3 3.7 − L 0.9 − − All Dimensions in mm c L Suggested Pad Layout Y (8x) Dimensions C C1 X Y Y1 C1 Y1 X (8x) ZDT6790 Document number: DS33210 Rev. 2 - 2 Value (in mm) 1.52 4.6 0.95 2.80 6.80 C 8 of 9 www.diodes.com July 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZDT6790 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated www.diodes.com ZDT6790 Document number: DS33210 Rev. 2 - 2 9 of 9 www.diodes.com July 2012 © Diodes Incorporated