DIODES BSR43

SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 – MARCH 2001
✪
COMPLEMENTARY TYPES –
BSR33
PARTMARKING DETAIL –
AR4
BSR43
C
E
C
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V CBO
90
V
Collector-Emitter Voltage
V CEO
80
V
Emitter-Base Voltage
V EBO
5
V
Peak Pulse Current
I CM
2
A
Continuous Collector Current
IC
1
A
Base Current
IB
100
mA
Power Dissipation at T amb =25°C
P TOT
Operating and Storage Temperature Range
T j:T stg
1
W
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V (BR)CBO
90
V
I C=100 µ A
Collector-Emitter
Breakdown Voltage
V (BR)CEO
80
V
I C=10mA
Emitter-Base Breakdown
Voltage
V (BR)EBO
5
V
I E=10 µ A
Collector Cut-Off Current
I CBO
100
50
nA
µA
V CB=60V
V CB=60V, Tamb =125°C
Collector-Emitter
Saturation Voltage
V CE(sat)
0.25
0.5
V
V
I C =150mA, I B =15mA
I C =500mA, I B =50mA
Base-Emitter
Saturation Voltage
V BE(sat)
1.0
1.2
V
V
I C =150mA, I B =15mA
I C =500mA, I B =50mA
Static Forward
Current Transfer Ratio
h FE
30
100
50
MAX.
*
I C =100 µ A, V CE =5V
I C =100mA, V CE =5V
I C =500mA, V CE =5V
300
Output Capacitance
C obo
12
pF
V CB =10V, f=1MHz
Input Capacitance
C ibo
90
pF
V EB =0.5V, f=1MHz
Transition Frequency
fT
MHz
I C=50mA, V CE=10V
f =35MHz
Turn-On Time
T on
250
ns
Turn-Off Time
T off
1000
ns
V CC =20V, I C =100mA
I B1 =I B2 =5mA
100
*Measured under pulsed conditions.
For typical characteristics graphs see FMMT493 datasheet.
TBA