ON MMBT3904LT1G General purpose transistor Datasheet

MMBT3904LT1G
General Purpose Transistor
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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Compliant
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
40
Vdc
Collector −Base Voltage
VCBO
60
Vdc
Emitter−Base Voltage
VEBO
6.0
Vdc
IC
200
mAdc
ICM
900
mAdc
Collector Current − Continuous
Collector Current − Peak (Note 3)
1
BASE
2
EMITTER
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) @TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2)
@TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
PD
RqJA
SOT−23 (TO−236)
CASE 318
STYLE 6
1
2
MARKING DIAGRAM
PD
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Reference SOA curve.
1AM M G
G
1
1AM = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBT3904LT1G
SOT−23 3000 / Tape & Reel
(Pb−Free)
MMBT3904LT3G
SOT−23 10,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
January, 2011 − Rev. 10
1
Publication Order Number:
MMBT3904LT1/D
MMBT3904LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
−
Vdc
Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
V(BR)CBO
60
−
Vdc
Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
−
Vdc
IBL
−
50
nAdc
ICEX
−
50
nAdc
40
70
100
60
30
−
−
300
−
−
−
−
0.2
0.3
0.65
−
0.85
0.95
OFF CHARACTERISTICS
Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
ON CHARACTERISTICS (Note 4)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
HFE
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
fT
300
−
MHz
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Cobo
−
4.0
pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
−
8.0
pF
Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hie
1.0
10
kW
Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hre
0.5
8.0
X 10− 4
Small −Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hfe
100
400
−
Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hoe
1.0
40
mmhos
Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz)
NF
−
5.0
dB
(VCC = 3.0 Vdc, VBE = − 0.5 Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc)
td
−
35
tr
−
35
(VCC = 3.0 Vdc,
IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)
ts
−
200
tf
−
50
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
ns
ns
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
DUTY CYCLE = 2%
300 ns
+3 V
+10.9 V
275
10 < t1 < 500 ms
DUTY CYCLE = 2%
t1
+3 V
+10.9 V
275
10 k
10 k
0
-0.5 V
CS < 4 pF*
< 1 ns
1N916
-9.1 V′
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
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2
CS < 4 pF*
MMBT3904LT1G
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C
TJ = 125°C
10
5000
2000
5.0
Q, CHARGE (pC)
CAPACITANCE (pF)
VCC = 40 V
IC/IB = 10
3000
7.0
Cibo
3.0
Cobo
2.0
1000
700
500
QT
300
200
QA
100
70
50
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
1.0
2.0 3.0
REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. Capacitance
20
30
50 70 100
200
Figure 4. Charge Data
500
500
IC/IB = 10
100
70
tr @ VCC = 3.0 V
50
30
20
VCC = 40 V
IC/IB = 10
300
200
t r, RISE TIME (ns)
300
200
TIME (ns)
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
40 V
100
70
50
30
20
15 V
10
7
5
10
2.0 V
td @ VOB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn −On Time
Figure 6. Rise Time
IC/IB = 10
200
500
t′s = ts - 1/8 tf
IB1 = IB2
VCC = 40 V
IB1 = IB2
300
200
IC/IB = 20
t f , FALL TIME (ns)
t s′ , STORAGE TIME (ns)
IC/IB = 20
200
IC, COLLECTOR CURRENT (mA)
500
300
200
7
5
100
70
IC/IB = 20
50
IC/IB = 10
30
20
100
70
50
10
10
7
5
7
5
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
IC/IB = 10
30
20
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
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3
200
MMBT3904LT1G
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
14
12
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
10
f = 1.0 kHz
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
8
6
SOURCE RESISTANCE = 1.0 k
IC = 50 mA
4
SOURCE RESISTANCE = 500 W
IC = 100 mA
2
0
0.1
0.2
0.4
1.0
2.0
IC = 1.0 mA
12
IC = 0.5 mA
10
IC = 50 mA
8
IC = 100 mA
6
4
2
4.0
10
20
40
0
100
0.1
0.2
0.4
1.0
2.0
4.0
10
20
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (k OHMS)
Figure 9.
Figure 10.
40
100
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
100
hoe, OUTPUT ADMITTANCE ( m mhos)
h fe , CURRENT GAIN
300
200
100
70
50
30
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
50
20
10
5
2
1
10
0.1
0.2
Figure 11. Current Gain
10
5.0
10
10
h re , VOLTAGE FEEDBACK RATIO (X 10 -4 )
h ie , INPUT IMPEDANCE (k OHMS)
5.0
Figure 12. Output Admittance
20
10
5.0
2.0
1.0
0.5
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
10
0.1
Figure 13. Input Impedance
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 14. Voltage Feedback Ratio
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MMBT3904LT1G
TYPICAL STATIC CHARACTERISTICS
1000
h FE, DC CURRENT GAIN
TJ = +150°C
VCE = 1.0 V
+25°C
100
-55°C
10
1
0.1
1.0
100
10
1000
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 15. DC Current Gain
1.0
TJ = 25°C
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
IB, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
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5
2.0
3.0
5.0
7.0
10
MMBT3904LT1G
IC/IB = 10
IC/IB = 10
0.7
150°C
0.6
25°C
0.5
−55°C
0.4
0.3
0.2
0.1
0
0.001
0.01
0.1
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 17. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 18. Base Emitter Saturation Voltage vs.
Collector Current
1.4
1.0
1.2
VCE = 1 V
+25°C TO +125°C
0.5
1.0
0.8
1.2
0.2
1
qVC FOR VCE(sat)
COEFFICIENT (mV/ °C)
VBE(on), BASE−EMITTER VOLTAGE (V)
1.4
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.8
−55°C
25°C
0.6
0
-55°C TO +25°C
-0.5
-55°C TO +25°C
-1.0
+25°C TO +125°C
0.4 150°C
0.2
0.0001
0.001
0.01
0.1
-2.0
1
0
20
40
60
80
100
120
140
160
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (mA)
Figure 19. Base Emitter Voltage vs. Collector
Current
Figure 20. Temperature Coefficients
1
1000
1 ms
10 ms
1s
100 ms
VCE = 1 V
TA = 25°C
0.1
180 200
Thermal Limit
IC (A)
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
qVB FOR VBE(sat)
-1.5
100
0.01
10
0.1
1
10
100
1000
0.001
Single Pulse Test
@ TA = 25°C
0.01
0.1
1
10
IC, COLLECTOR CURRENT (mA)
VCE (Vdc)
Figure 21. Current Gain Bandwidth vs.
Collector Current
Figure 22. Safe Operating Area
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6
100
MMBT3904LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
e
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MMBT3904LT1/D
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