DMN32D2LFB4 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.2V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protected Gate Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: DFN1006H4-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.001 grams (approximate) • • • • • • Drain DFN1006H4-3 Body Diode S Gate D Gate Protection Diode BOTTOM VIEW ESD PROTECTED Maximum Ratings Equivalent Circuit TOP VIEW @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS ID Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) Thermal Characteristics PD RθJA TJ, TSTG Operating and Storage Temperature Range Electrical Characteristics 350 357 mW °C/W -55 to +150 °C Symbol Min Typ Max Unit BVDSS IDSS 30 ⎯ ⎯ ⎯ IGSS ⎯ ⎯ ⎯ 1 ±10 ±500 V μA μA nA VGS = 0V, ID = 10μA VDS = 30V, VGS = 0V VGS = ±10V, VDS = 0V VGS = ±5V, VDS = 0V VGS(th) 0.6 V 2.2 1.5 1.2 Ω |Yfs| VSD ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1.2 ⎯ ⎯ ⎯ 100 0.5 ⎯ 1.4 mS V VDS = VGS, ID = 250μA VGS = 1.8V, ID = 20mA VGS = 2.5V, ID = 20mA VGS = 4.0V, ID = 100mA VDS =10V, ID = 0.1A VGS = 0V, IS = 115mA Ciss Coss Crss ⎯ ⎯ ⎯ 39 10 3.6 ⎯ ⎯ ⎯ pF pF pF Turn-on Time ton ⎯ 11 ⎯ nS Turn-off Time toff ⎯ 51 ⎯ nS @ TC = 25°C Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance RDS (ON) Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Time Unit V V mA @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Value 30 ±10 300 @TA = 25°C unless otherwise specified Total Power Dissipation (Note 1) @TA = 25°C Thermal Resistance, Junction to Ambient (Note 1) Notes: G Source Test Condition VDS = 3V, VGS = 0V f = 1.0MHz VDD = 5V, ID = 10 mA, VGS = 0-5V 1. Device mounted on FR-4 PCB, pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Short duration pulse test used to minimize self-heating effect. DMN32D2LFB4 Document number: DS31124 Rev. 5 - 2 1 of 5 www.diodes.com June 2009 © Diodes Incorporated DMN32D2LFB4 DMN32D2LFB4 Document number: DS31124 Rev. 5 - 2 2 of 5 www.diodes.com June 2009 © Diodes Incorporated DMN32D2LFB4 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.8 1.6 VGS = 4V ID = 100mA 1.4 VGS = 2.5V ID = 20mA VGS = 1.8V ID = 20mA 1.2 1 0.8 0.6 -75 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C°) Fig. 7 Normalized Static Drain-Source On-Resistance vs. Ambient Temperature 50 f = 1 MHz 40 CT, CAPACITANCE (pF) Ciss 30 20 10 Coss Crss 0 0 Ordering Information 20 (Note 5) Part Number DMN32D2LFB4-7 Notes: 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Capacitance Case DFN1006H4-3 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information DV DMN32D2LFB4 Document number: DS31124 Rev. 5 - 2 DV = Product Type Marking Code 3 of 5 www.diodes.com June 2009 © Diodes Incorporated DMN32D2LFB4 Package Outline Dimensions A A1 D b1 E e b2 L2 L3 DFN1006H4-3 Dim Min Max Typ A 0.40 ⎯ ⎯ A1 0 0.05 0.02 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm L1 Suggested Pad Layout C Dimensions Z G1 G2 X X1 Y C X1 X G2 G1 Y Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Z DMN32D2LFB4 Document number: DS31124 Rev. 5 - 2 4 of 5 www.diodes.com June 2009 © Diodes Incorporated DMN32D2LFB4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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