DMG4511SK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V(BR)DSS RDS(ON) ID TA = 25°C 35V 35mΩ @ VGS = 10V 13A -35V 45mΩ @ VGS = -10V -12A • • • • • • • • • Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • Backlighting DC-DC Converters Power management functions Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Lead Free/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • • • • • Case: TO252-4L Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.328 grams (approximate) D2 G2 G1 S2 Top View Bottom View D1 N-Channel MOSFET S1 P-Channel MOSFET Ordering Information (Note 3) Part Number DMG4511SK4-7 Notes: Case TO252-4L Packaging 3000 / Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information G4511S YYWW DMG4511SK4 Document number: DS32042 Rev. 4 - 2 = Manufacturer’s Marking G4511S = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01 – 53) 1 of 9 www.diodes.com July 2011 © Diodes Incorporated DMG4511SK4 Maximum Ratings – N-CHANNEL, Q1 @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) VGS = 10V Steady State Continuous Drain Current (Note 5) VGS = 10V Steady State Continuous Drain Current (Note 5) VGS = 10V t ≤ 10s Continuous Drain Current (Note 5) VGS = 4.5V Steady State Continuous Drain Current (Note 5) VGS = 4.5V t ≤ 10s TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C ID Value 35 ±20 5.3 4.2 ID 8.6 6.8 A ID 13 11 A ID 6.3 5.0 A ID Pulsed Drain Current (Note 6) IDM 9.3 7.4 50 Unit V V A A A Maximum Ratings – P-CHANNEL, Q2 @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) VGS = -10V Steady State Continuous Drain Current (Note 5) VGS = -10V Steady State Continuous Drain Current (Note 5) VGS = -10V t ≤ 10s Continuous Drain Current (Note 5) VGS = -4.5V Steady State Continuous Drain Current (Note 5) VGS = -4.5V t ≤ 10s TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C Pulsed Drain Current (Note 6) ID Value -35 ±20 -5.0 -3.8 ID -7.8 -6.2 A ID -12 -10 A ID -6.5 -5.2 A IDM -9.6 -7.7 -50 Symbol PD RθJA PD RθJA PD RθJA TJ, TSTG Value 1.54 81.3 4.1 30.8 8.9 14 -55 to +150 ID Unit V V A A A Thermal Characteristics Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) Power Dissipation (Note 5) t ≤ 10s Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) t ≤ 10s Operating and Storage Temperature Range Notes: Unit W °C/W W °C/W W °C/W °C 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided. 6. Repetitive rating, pulse width limited by junction temperature. DMG4511SK4 Document number: DS32042 Rev. 4 - 2 2 of 9 www.diodes.com July 2011 © Diodes Incorporated DMG4511SK4 Electrical Characteristics – N-CHANNEL, Q1 @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Symbol Min Typ Max Unit BVDSS IDSS IGSS 35 - - 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 35V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1.0 - 3.0 V RDS (ON) - 25 50 35 65 mΩ |Yfs| VSD - 4.5 - 1.2 S V VDS = VGS, ID = 250μA VGS = 10V, ID = 8A VGS = 4.5V, ID = 6A VDS = 10V, ID = 8A VGS = 0V, IS = 8A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 850 64.7 51.9 1.6 18.7 8.8 2.6 2.1 5.4 2.8 33.2 35.6 - pF pF pF Ω nC ns ns ns ns Test Condition VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 10V, VDS = 28V, ID = 8A VGS = 4.5V, VDS = 28V, ID = 8A VDS = 18V, VGS = 10V, RL = 18Ω, RG = 3.3Ω, ID = 1A Electrical Characteristics – P-CHANNEL, Q2 @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -10V) Total Gate Charge (VGS = -4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS -35 - - -1.0 ±100 V μA nA VGS = 0V, ID = -250μA VDS = -35V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) -1.0 - -3.0 V RDS (ON) - 30 40 45 65 mΩ |Yfs| VSD - 8 - -1.2 S V VDS = VGS, ID = -250μA VGS = -10V, ID = -6A VGS = -4.5V, ID = -4A VDS = -10V, ID = -6A VGS = 0V, IS = -6A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 985.2 90.6 75.3 7.0 19.2 9.5 2.0 3.5 5.2 4.8 45.8 29.5 - pF pF pF Ω nC ns ns ns ns Test Condition VDS = -25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = -10V, VDS = -28V, ID = -6A VGS = -4.5V, VDS = -28V, ID = -6A VDS = -18V, VGS = -10V, RL = 18Ω, RG = 3.3Ω, ID = -1A 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMG4511SK4 Document number: DS32042 Rev. 4 - 2 3 of 9 www.diodes.com July 2011 © Diodes Incorporated DMG4511SK4 N-CHANNEL, Q1 30 30 VGS = 8.0V VGS = 4.0V 20 VGS = 3.5V 15 VDS = 5V 25 VGS = 4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 10 VGS = 3.2V 20 15 10 TA = 150°C T A = 125°C 5 5 TA = 85°C VGS = 3.0V VGS = 2.8V 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.05 0.04 0.03 VGS = 4.5V VGS = 8.0V 0.02 0.01 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.7 VGS = 10V ID = 10A 1.5 VGS = 4.5V ID = 5A 1.3 0 2 1.1 0.9 0.7 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 0.5 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMG4511SK4 Document number: DS32042 Rev. 4 - 2 TA = 25°C TA = -55°C 4 of 9 www.diodes.com 0 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 5 0.08 0.07 VGS = 4.5V 0.06 TA = 150°C 0.05 TA = 125°C 0.04 TA = 85°C 0.03 TA = 25°C 0.02 TA = -55°C 0.01 0 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.06 0.05 0.04 VGS = 4.5V ID = 5A 0.03 VGS = 10V ID = 10A 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature July 2011 © Diodes Incorporated 3.0 20 2.7 18 2.4 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) DMG4511SK4 2.1 1.8 ID = 250µA 1.5 1.2 0.9 0.6 TA = 25°C 12 10 8 6 4 2 0.3 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 1,400 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 10,000 1,200 f = 1MHz IDSS, LEAKAGE CURRENT (nA) C, CAPACITANCE (pF) 14 1,000 Ciss 800 600 400 200 1,000 TA = 150°C TA = 125°C 100 TA = 85°C 10 TA = 25°C Coss Crss 0 0 1 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 35 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 35 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 80°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 T J - T A = P * RθJA(t) Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.00001 0.0001 DMG4511SK4 Document number: DS32042 Rev. 4 - 2 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response 5 of 9 www.diodes.com 10 100 1,000 July 2011 © Diodes Incorporated DMG4511SK4 P-CHANNEL, Q2 30 30 VGS = -8.0V VGS = -4.5V 25 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 25 VGS = -4.0V 20 VGS = -3.5V 15 10 VGS = -3.2V 20 15 10 TA = 150°C 5 5 T A = 125°C VGS = -3.0V VGS = -2.8V 0 0 0.5 1 1.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Output Characteristic 2 0.08 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 0.07 0.06 0.05 VGS = -4.5V 0.04 VGS = -8.0V 0.03 0.02 0.01 0 0 5 10 15 20 25 -ID, DRAIN-SOURCE CURRENT (A) Fig. 14 Typical On-Resistance vs. Drain Current and Gate Voltage 30 1.5 1.3 1.1 VGS = -10V ID = -10A 0.9 VGS = -4.5V ID = -5A 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 16 On-Resistance Variation with Temperature DMG4511SK4 Document number: DS32042 Rev. 4 - 2 6 of 9 www.diodes.com 1 2 3 4 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 13 Typical Transfer Characteristic 5 0.10 0.08 TA = 150°C 0.06 TA = 125°C TA = 85°C 0.04 TA = 25°C T A = -55°C 0.02 0 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.7 0 TA = 85°C T A = 25°C TA = -55°C 5 10 15 20 25 -ID, DRAIN CURRENT (A) Fig. 15 Typical On-Resistance vs. Drain Current and Temperature 30 0.10 0.09 0.08 0.07 0.06 VGS = -4.5V ID = -5A 0.05 0.04 0.03 VGS = -10V ID = -10A 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 17 On-Resistance Variation with Temperature July 2011 © Diodes Incorporated 3.0 20 2.7 18 2.4 16 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) DMG4511SK4 2.1 1.8 1.5 ID = -250µA 1.2 0.9 12 TA = 25°C 10 8 6 0.6 4 0.3 2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 18 Gate Threshold Variation vs. Ambient Temperature 0 0.2 1,400 0.4 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 19 Diode Forward Voltage vs. Current 10,000 -IDSS, LEAKAGE CURRENT (nA) f = 1MHz 1,200 CT, TOTAL CAPACITANCE (pF) 14 Ciss 1,000 800 600 400 1,000 T A = 150°C TA = 125°C 100 TA = 85°C 10 TA = 25°C Coss 200 Crss 0 1 0 5 10 15 20 25 30 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 20 Typical Total Capacitance 35 5 10 15 20 25 30 35 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 21 Typical Leakage Current vs. Drain-Source Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 80°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 T J - T A = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DMG4511SK4 Document number: DS32042 Rev. 4 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 22 Transient Thermal Response 7 of 9 www.diodes.com 10 100 1,000 July 2011 © Diodes Incorporated DMG4511SK4 Package Outline Dimensions E A b3 c2 L3 A2 D E1 H L4 A1 L 4X b2 e 5X b a TO252-4L Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.51 0.71 0.583 b2 0.61 0.79 0.70 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 − − e 1.27 − − E 6.45 6.70 6.58 E1 4.32 − − H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° − All Dimensions in mm Suggested Pad Layout X1 Y1 Y2 Y3 c1 Y X (4x) DMG4511SK4 Document number: DS32042 Rev. 4 - 2 Dimensions c c1 X X1 Y Y1 Y2 Y3 Value (in mm) 1.27 2.54 1.00 5.73 2.00 6.17 1.64 2.66 c 8 of 9 www.diodes.com July 2011 © Diodes Incorporated DMG4511SK4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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