DMN6040SVT 60V N-CHANNEL ENHANCEMENT MODE MOSFET V(BR)DSS Features and Benefits ID RDS(on) max TA = 25°C 44mΩ @ VGS = 10V 5.0A 60mΩ @ VGS = 4.5V 4.3A 60V Description and Applications • • • • 100% Unclamped Inductive Switch (UIS) test in production • • • • • • Low Input Capacitance Low On-Resistance Fast Switching Speed Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • Case: TSOT26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.013 grams (approximate) • • • DC-DC Converters Power management functions Backlighting • Drain TSOT26 D 1 6 D D 2 5 D G 3 4 S Body Diode Gate Top View Source Equivalent Circuit Top View Pin Configuration Ordering Information (Note 3) Part Number DMN6040SVT-7 Notes: Case TSOT26 Packaging 3,000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information 32D Date Code Key Year Code Month Code 2010 X Jan 1 2011 Y Feb 2 DMN6040SVT Document number: DS35562 Rev. 10 - 2 Mar 3 YM ADVANCE INFORMATION Product Summary 32D = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September) 2012 Z Apr 4 May 5 2013 A Jun 6 1 of 7 www.diodes.com 2014 B Jul 7 Aug 8 2015 C Sep 9 Oct O 2016 D Nov N Dec D March 2012 © Diodes Incorporated DMN6040SVT Maximum Ratings @TA = 25°C unless otherwise specified Continuous Drain Current (Note 5) VGS = 10V Symbol VDSS VGSS TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C Steady State t<10s Continuous Drain Current (Note 5) VGS = 5V Steady State t<10s ID Value 60 ±20 5.0 4.0 ID 6.3 5.0 A ID 4.3 3.4 A Units V V A 5.4 4.3 2.1 30 14.2 10 ID Maximum Body Diode Forward Current (Note 5) Pulsed Drain Current (10μs pulse, duty cycle = 1%) Avalanche Current (Note 6) L = 0.1mH Avalanche Energy (Note 6) L = 0.1mH IS IDM IAR EAR A A A A mJ Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol TA = 25°C TA = 70°C Steady state t<10s TA = 25°C TA = 70°C Steady state t<10s Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) PD RθJA PD RθJA Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range RθJC TJ, TSTG 60 40 10 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 1 Single Pulse Maximum Power Dissipation Document number: DS35562 Rev. 10 - 2 W °C/W °C/W W °C/W °C/W °C/W °C PW = 10s PW = 1s 0.1 0.01 0.1 2 of 7 www.diodes.com RDS(on) Limited DC 1 20 DMN6040SVT Units PW = 10µs Single Pulse RθJA = 72°C/W RθJA(t) = r(t) * RθJA TJ - TA = P * RθJA(t) ID, DRAIN CURRENT (A) 80 Value 1.2 0.75 106 69 1.8 1.1 68 44 20 -55 to +150 100 100 P(PK), PEAK TRANSIENT POIWER (W) ADVANCE INFORMATION Characteristic Drain-Source Voltage Gate-Source Voltage PW = 100ms PW = 10ms PW = 1ms PW = 100µs 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2 SOA, Safe Operation Area 100 March 2012 © Diodes Incorporated DMN6040SVT ADVANCE INFORMATION r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 72°C/W Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Fig. 3 Transient Thermal Resistance 10 100 1,000 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 100 ±100 V nA nA VGS = 0V, ID = 250μA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD ⎯ 30 35 4.5 0.7 3 44 60 ⎯ 1.2 V Static Drain-Source On-Resistance 1 ⎯ ⎯ ⎯ ⎯ VDS = VGS, ID = 250μA VGS = 10V, ID = 4.3A VGS = 4.5V, ID = 4A VDS = 10V, ID = 4.3A VGS = 0V, IS = 1A Ciss Coss Crss RG Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1287 57 44 1.2 22.4 10.4 4.9 3.0 6.6 8.1 20.1 4.0 18 11.9 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ S V Test Condition pF VDS = 25V, VGS = 0V f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 30V, ID = 4.3A nS VGS = 10V, VDD = 30V, RG = 6Ω, ID = 4.3A nS nC IS = 4.3A, dI/dt = 100A/μs IS = 4.3A, dI/dt = 100A/μs 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN6040SVT Document number: DS35562 Rev. 10 - 2 3 of 7 www.diodes.com March 2012 © Diodes Incorporated DMN6040SVT 20 20 16 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 16 12 8 12 8 TA = 150°C TA = 125°C 4 4 TA = 85°C T A = 25°C 0 0 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 4 Typical Output Characteristic 3.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.10 0.09 0.08 0.07 0.06 0.05 VGS = 4.5V 0.04 0.03 VGS = 10V 0.02 0.01 0 0 4 8 12 16 ID, DRAIN-SOURCE CURRENT Fig. 6 Typical On-Resistance vs. Drain Current and Gate Voltage TA = -55°C 0 1 2 3 4 VGS, GATE-SOURCE VOLTAGE Fig. 5 Typical Transfer Characteristics 5 0.10 0.08 0.06 ID = 3.5A ID = 4.5A 0.04 0.02 20 0 0 1 2 3 4 5 6 7 8 9 VGS, GATE-SOURCE VOLTAGE (V) Fig. 7 Typical On-Resistance vs. Drain Current and Gate Voltage 10 2.4 0.10 0.09 2.2 VGS = 4.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ADVANCE INFORMATION VDS = 5.0V TA = 150°C 0.08 0.07 TA = 125°C 0.06 0.05 T A = 85°C 0.04 TA = 25°C 0.03 0.02 TA = -55°C 0.01 VGS = 10V ID = 10A 2.0 1.8 1.6 1.4 VGS = 4.5V ID = 5A 1.2 1.0 0.8 0.6 0.4 0.2 0 0 4 8 12 16 ID, DRAIN CURRENT Fig. 8 Typical On-Resistance vs. Drain Current and Temperature DMN6040SVT Document number: DS35562 Rev. 10 - 2 20 4 of 7 www.diodes.com 0 50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 9 On-Resistance Variation with Temperature March 2012 © Diodes Incorporated VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 4.0 0.10 0.08 VGS = 4.5V ID = 500mA 0.06 0.04 VGS = 2.5V ID = 200mA 0.02 3.5 3.0 2.5 ID = 1mA 2.0 1.5 ID = 250µA 1.0 0.5 0 - 50 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 11 Gate Threshold Variation vs. Ambient Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 10 On-Resistance Variation with Temperature CT, JUNCTION CAPACITANCE (pF) 20 IS, SOURCE CURRENT (V) 16 TA = 25°C 12 8 4 Ciss Coss Crss f = 1MHz 0 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 12 Diode Forward Voltage vs. Current 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 13 Typical Junction Capacitance 30 VDS = 30V ID = 4.3A VGS GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION DMN6040SVT 0 5 10 15 20 Qg, TOTAL GATE CHARGE (nC) Fig. 14 Gate Charge DMN6040SVT Document number: DS35562 Rev. 10 - 2 25 5 of 7 www.diodes.com March 2012 © Diodes Incorporated DMN6040SVT ADVANCE INFORMATION Package Outline Dimensions TSOT26 Dim Min Max Typ A — 1.00 — A1 0.01 0.10 — A2 0.84 0.90 — D — — 2.90 E — — 2.80 E1 — — 1.60 b 0.30 0.45 — c 0.12 0.20 — e — — 0.95 e1 — — 1.90 L 0.30 0.50 — L2 — — 0.25 θ 0° 8° 4° θ1 4° 12° — All Dimensions in mm D e1 E E1 L2 c 4x θ1 e L θ 6x b A A2 A1 Suggested Pad Layout C C Y1 Y (6x) Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 X (6x) DMN6040SVT Document number: DS35562 Rev. 10 - 2 6 of 7 www.diodes.com March 2012 © Diodes Incorporated DMN6040SVT ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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