Renesas H7N0310LD Silicon n channel mos fet high speed power switching Datasheet

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H7N0310LD, H7N0310LS, H7N0310LM
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1422C(Z)
4th. Edition
Aug. 2002
Features
• Low on-resistance
• RDS(on) = 8 mΩ typ.
• Low drive current
Outline
LDPAK
4
4
4
D
1
G
1
2
2
3
H7N0310LS
3
S
H7N0310LD
1
2
3
H7N0310LM
1. Gate
2. Drain
3. Source
4. Drain
H7N0310LD, H7N0310LS, H7N0310LM
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
30
A
120
A
Drain peak current
ID(pulse)
Body-drain diode reverse drain current
IDR
Channel dissipation
Pch
Channel to Case Thermal Impedance
Note 1
30
A
50
W
θch-c
2.5
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Rev.3, Aug. 2002, page 2 of 2
Note 2
H7N0310LD, H7N0310LS, H7N0310LM
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
V
Test Conditions
Drain to source breakdown voltage V(BR)DSS
30
—
—
Gate to source breakdown voltage
V(BR)GSS
±20
—
—
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltege drain current
IDSS
—
—
10
µA
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
ID = 1 mA, VDS = 10 V
Static drain to source on state
RDS(on)
—
8.0
10
mΩ
ID = 15 A, VGS = 10 V
—
13
19
mΩ
ID = 15 A, VGS = 5 V
|yfs|
21
35
—
S
ID = 15 A, VDS = 10 V
Input capacitance
Ciss
—
1400
—
pF
VDS = 10 V
Output capacitance
Coss
—
380
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
210
—
pF
f = 1 MHz
Total gate charge
Qg
—
24
—
nc
VDD = 10 V
Gate to source charge
Qgs
—
4.8
—
nc
VGS = 10 V
Gate to drain charge
Qgd
—
4.6
—
nc
ID = 30 A
Turn-on delay time
td(on)
—
21
—
ns
VGS = 10 V, ID = 15 A
Rise time
tr
—
250
—
ns
RL = 0.67 Ω
Turn-off delay time
td(off)
—
55
—
ns
Rg = 4.7 Ω
Fall time
tf
—
16
—
ns
Body–drain diode forward voltage
VDF
—
0.90
—
V
IF = 30 A, VGS = 0
—
35
—
ns
IF = 30 A, VGS = 0
diF/ dt = 50 A/µs
resistance
Forward transfer admittance
Body–drain diode reverse recovery trr
time
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
Note1
Note1
Note1
Note1
Notes: 1. Pulse test
Rev.3, Aug. 2002, page 3 of 3
H7N0310LD, H7N0310LS, H7N0310LM
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
500
I D (A)
10 µs
60
100
10
Drain Current
Channel Dissipation
Pch (W)
80
40
20
Op
PW
era
tio
1
0.1
50
100
Case Temperature
150
200
n
=1
0m
s
Operation in
this area is
limited by R DS(on)
Tc (°C)
0.01
0.1 0.3
1
3
10
30
100
Drain to Source Voltage V DS (V)
Typical Output Characteristics
50
Typical Transfer Characteristics
50
10 V
V DS = 10 V
Pulse Test
4V
Pulse Test
(A)
6V
30
3.5 V
20
10
VGS = 3 V
ID
40
Drain Current
I D (A)
DC
Tc = 25°C
1 shot Pulse
0
Drain Current
10
0
1 m µs
s
40
30
20
25°C
10
Tc = 75°C
−25°C
0
2
4
6
Drain to Source Voltage
Rev.3, Aug. 2002, page 4 of 4
8
10
V DS (V)
0
1
2
3
Gate to Source Voltage
5
4
V GS (V)
H7N0310LD, H7N0310LS, H7N0310LM
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
0.4
0.2
10 A
5A
0.1
0
Static Drain to Source on State Resistance
R DS(on) (m Ω)
I D = 20 A
4
8
12
Gate to Source Voltage
16
20
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
40
Pulse Test
32
24
16
I D = 5 A, 10 A
20 A
V GS = 5 V
8
10 V
0
−40
Drain to Source On State Resistance
R DS(on) (m Ω)
0.3
Pulse Test
5 A, 10 A, 20 A
0
40
80
120
160
Case Temperature Tc (°C)
20
VGS = 5 V
10
10 V
5
2
1
0.1 0.2 0.5 1 2
5 10 20 50 100
Drain Current I D (A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
V DS(on) (V)
0.5
Drain to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
100
Tc = −25°C
30
10
75°C
25°C
3
1
0.3
0.1
0.1
V DS = 10 V
Pulse Test
0.3
1
3
10
30
100
Drain Current I D (A)
Rev.3, Aug. 2002, page 5 of 5
H7N0310LD, H7N0310LS, H7N0310LM
Typical Capacitance vs.
Drain to Source Voltage
Body-Drain Diode Reverse
Recovery Time
500
3000
Capacitance C (pF)
10000
Reverse Recovery Time trr (ns)
1000
200
100
50
20
10
0.1
Ciss
1000
Coss
300
Crss
100
30
di / dt = 50 A / µs
V GS = 0, Ta = 25°C
VGS = 0
f = 1 MHz
10
0
0.3
1
3
10
30
100
Reverse Drain Current I DR (A)
20
10
0
12
8
VDD = 25 V
10 V
5V
8
16
24
32
Gate Charge Qg (nc)
Rev.3, Aug. 2002, page 6 of 6
4
0
40
20
30
40
50
Switching Characteristics
tr
Switching Time t (ns)
V DS
V DD = 25 V
10 V
5V
16
V GS (V)
V GS
40
30
500
20
I D = 30 A
Gate to Source Voltage
Drain to Source Voltage
V DS (V)
Dynamic Input Characteristics
50
10
Drain to Source Voltage V DS (V)
200
100
t d(off)
50
t d(on)
20
tf
10
V GS = 10 V, V DS = 10 V
Rg = 4.7 Ω, duty < 1 %
5
2 5 10 20
0.1 0.2 0.5 1
Drain Current I D (A)
50 100
H7N0310LD, H7N0310LS, H7N0310LM
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I DR (A)
50
40
10 V
30
V GS = 0
5V
20
10
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
V SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.1
0.03
0.2
θch − c(t) = γs (t) • θch − c
θch − c = 2.5°C/ W, Tc = 25°C
0.1
0.05
0.02
e
1
0.0 puls
t
o
h
1s
PDM
D=
PW
T
PW
T
0.01
10 µ
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Rev.3, Aug. 2002, page 7 of 7
H7N0310LD, H7N0310LS, H7N0310LM
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
Rg
90%
D.U.T.
RL
Vin
Vin
10 V
V DS
= 10 V
Vout
10%
10%
90%
td(on)
Rev.3, Aug. 2002, page 8 of 8
tr
10%
90%
td(off)
tf
H7N0310LD, H7N0310LS, H7N0310LM
Package Dimensions
• H7N0310LD
Unit: mm
2.54 ± 0.5
(1.4)
2.54 ± 0.5
11.0 ± 0.5
10.0
0.2
0.86 +– 0.1
11.3 ± 0.5
1.37 ± 0.2
1.3 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
10.2 ± 0.3
2.49 ± 0.2
0.4 ± 0.1
Hitachi Code
JEDEC
JEITA
Mass (reference value)
LDPAK (L)
—
—
1.4 g
Rev.3, Aug. 2002, page 9 of 9
H7N0310LD, H7N0310LS, H7N0310LM
• H7N0310LS
Unit: mm
7.8
7.0
(1.5)
0.3
10.0 +– 0.5
0.2
0.1 +– 0.1
2.2
2.49 ± 0.2
0.2
0.86 +– 0.1
2.54 ± 0.5
0.3
3.0 +– 0.5
1.3 ± 0.2
2.54 ± 0.5
8.6 ± 0.3
(1.5)
1.37 ± 0.2
7.8
6.6
1.3 ± 0.2
0.4 ± 0.1
Hitachi Code
JEDEC
JEITA
Mass (reference value)
Rev.3, Aug. 2002, page 10 of 10
1.7
(1.4)
4.44 ± 0.2
10.2 ± 0.3
LDPAK (S)-(1)
—
—
1.3 g
H7N0310LD, H7N0310LS, H7N0310LM
• H7N0310LM
Unit: mm
2.54 ± 0.5
7.8
7.0
(2.3)
0.3
10.0 +– 0.5
0.2
0.1 +– 0.1
2.2
2.49 ± 0.2
0.2
0.86 +– 0.1
2.54 ± 0.5
1.7
7.8
6.6
1.3 ± 0.2
0.3
5.0 +– 0.5
1.3 ± 0.2
8.6 ± 0.3
(1.5)
1.37 ± 0.2
(1.4)
4.44 ± 0.2
10.2 ± 0.3
0.4 ± 0.1
Hitachi Code
JEDEC
JEITA
Mass (reference value)
LDPAK (S)-(2)
—
—
1.35 g
Rev.3, Aug. 2002, page 11 of 11
H7N0310LD, H7N0310LS, H7N0310LM
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 6.0
Rev.3, Aug. 2002, page 12 of 12
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