Infineon BF5020W Silicon n-channel mosfet tetrode Datasheet

BF5020...
Silicon N-Channel MOSFET Tetrode
• Low noise gain controlled input stages of UHF- and
3
VHF - tuners with 3 V up to 5 V supply voltage
2
4
• Integrated gate protection diodes
1
• Excellent noise figure
• High gain, high forward transadmittance
• Improved cross modulation at gain reduction
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Drain
AGC
HF
Input
G2
G1
R G1
HF Output
+ DC
GND
VGG
EHA07461
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Pin Configuration
Marking
BF5020
SOT143
1=S
2=D
3 = G2 4 = G1 -
-
KYs
BF5020R
SOT143R
1=D
2=S
3 = G1 4 = G2 -
-
KYs
BF5020W
SOT343
1=D
2=S
3 = G1 4 = G2 -
-
KYs
Maximum Ratings
Parameter
Symbol
Drain-source voltage
VDS
Continuous drain current
ID
Gate 1/ gate 2-source current
IG1S, IG2S
Gate 1/ gate 2-source voltage
VG1S, VG2S
Total power dissipation
Ptot
Value
8
V
25
mA
± 10
mA
±6
V
mW
TS ≤ 76 °C, BF5020, BF5020R
200
TS ≤ 94 °C, BF5020W
200
Storage temperature
Tstg
-55 ... 150
Channel temperature
Tch
150
1
Unit
°C
2009-10-01
BF5020...
Thermal Resistance
Parameter
Symbol
Channel - soldering point 1)
Rthchs
Value
Unit
K/W
BF5020, BF5020R
≤ 370
BF5020W
≤ 280
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DS
12
-
-
+V(BR)G1SS
6
-
15
+V(BR)G2SS
6
-
15
+IG1SS
-
-
50
+IG2SS
-
-
50
IDSS
-
-
100
IDSX
-
14
-
mA
VG1S(p)
-
0.7
-
V
VG2S(p)
-
0.7
-
DC Characteristics
Drain-source breakdown voltage
V
ID = 20 µA, VG1S = 0 , VG2S = 0
Gate1-source breakdown voltage
+IG1S = 10 mA, V G2S = 0 , VDS = 0
Gate2-source breakdown voltage
+IG2S = 10 mA, V G1S = 0 , VDS = 0
Gate1-source leakage current
nA
VG1S = 6 V, VG2S = 0 , VDS = 0
Gate2-source leakage current
VG2S = 6 V, VG1S = 0 , VDS = 0
Drain current
VDS = 5 V, VG1S = 0 , VG2S = 4 V
Drain-source current
VDS = 5 V, VG2S = 4 V, RG1 = 120 kΩ
Gate1-source pinch-off voltage
VDS = 5 V, VG2S = 4 V, ID = 20 µA
Gate2-source pinch-off voltage
VDS = 5 V, I D = 20 µA, VG1S = 2 V
1For calculation of R
thJA please refer to Application Note Thermal Resistance
2
2009-10-01
BF5020...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Parameter
Unit
min.
typ.
max.
g fs
-
34
-
mS
Cg1ss
-
2.4
-
pF
Cdss
-
1
-
AC Characteristics - (verified by random sampling)
Forward transconductance
VDS = 5 V, I D = 10 mA, VG2S = 4 V
Gate1 input capacitance
VDS = 5 V, I D = 10 mA, VG2S = 4 V
Output capacitance
VDS = 5 V, I D = 10 mA, VG2S = 4 V
Power gain
Gp
dB
VDS = 5 V, I D = 10 mA, VG2S = 4 V,
f = 800 MHz
-
26
-
-
32
-
VDS = 5 V, I D = 10 mA, VG2S = 4 V,
f = 45 MHz
Noise figure
dB
F
VDS = 5 V, I D = 10 mA, VG2S = 4 V,
f = 800 MHz
-
1.2
-
-
0.8
-
-
45
-
VDS = 5 V, I D = 10 mA, VG2S = 4 V,
f = 45 MHz
∆G p
Gain control range
VDS = 5 V, V G2S = 4...0 V
Cross-modulation1), VDS = 5 V, RG1 = 120 kΩ
Xmod
dBµV
AGC = 0
-
98
-
AGC = 10 dB
-
96
-
AGC = 40 dB
-
106
-
1Input
level for k = 1%; fw = 50 MHz, funw = 60 MHz
3
2009-10-01
BF5020...
Total power dissipation Ptot = ƒ(TS)
BF5020W
Total power dissipation Ptot = ƒ(TS)
BF5020, BF5020R
220
220
mW
180
180
160
160
P tot
P tot
mA
140
140
120
120
100
100
80
80
60
60
40
40
20
20
0
0
15
30
45
60
75
90 105 120 °C
0
0
150
15
30
45
60
75
90 105 120 °C
TS
150
TS
Output characteristics ID = ƒ(V DS)
Gate 1 current IG1 = ƒ(V G1S)
VDS = 5V
VG2S = Parameter
20
180
mA
1.5V
µA
16
140
1.4V
IG1
ID
14
12
120
4V
3.5V
3V
2.5V
2V
100
1.3V
10
80
8
1.2V
60
6
1.1V
40
4
20
2
0
0
2
4
6
8
V
0
0
12
VDS
0.5
1
1.5
2
V
3
VG1S
4
2009-10-01
BF5020...
Drain current ID = ƒ(V G1S)
VDS = 5V
Gate 1 forward transconductance
g fs = ƒ(ID)
VDS = 5V, VG2S = Parameter
VG2S = Parameter
50
30
mA
4V
mS
40
3V
24
22
ID
g fs
35
30
4V
3V
2V
1.5 V
1V
20
18
16
25
14
20
12
2V
15
10
8
10
6
1.5V
5
0
0
4
2
5
10
15
20
25
30
35 mA
0
0
45
0.2
0.4
0.6
0.8
1
1.2
V
1.4
ID
1.8
VG1S
Drain current ID = ƒ(VGG )
Drain current ID = ƒ(VGG)
VDS = 5V, VG2S = 4V, RG1 = 120 kΩ
VG2S = 4V
(connected to VGG, VGG =gate1 supply voltage)
RG1 = Parameter in kΩ
16
24
68K
mA
mA
82K
20
12
18
100K
10
ID
ID
16
8
120K
14
150K
12
180K
10
6
8
4
6
4
2
2
0
0
1
2
3
V
0
0
5
VGG
1
2
3
4
V
6
VGG=VDS
5
2009-10-01
BF5020...
Drain current ID = ƒ(VG2S)
AGC characteristic AGC = ƒ(V G2S)
f = 50 MHz
VDS = 5 V, RG1 = Parameter in kΩ
measured in test circuit, see page 7
0
28
mA
dB
82K
24
Rg=120KOHm
Rg=82KOHm
22
-20
18
AGC
ID
20
120K
16
-30
-40
14
12
-50
10
8
-60
6
4
-70
2
0
0
0.5
1
1.5
2
2.5
3
V
-80
0.5
4
1
1.5
2
2.5
3
VG2S
Crossmodulation Vunw = (AGC)
f = 800 MHz
VDS = 5 V
measured in test circuit, see page 7
measured in test circuit, see page 7
107
dBµV
Rg1=120KOHm
4
VG2S
AGC characteristic AGC = ƒ(VG2S)
0
dB
V
RG1=82KOHm_22m
Rg1=82KOHm
-15
104
-20
103
Vunw
AGC
-10
-25
-30
102
101
100
-35
99
-40
98
-45
97
-50
96
-55
95
-60
94
-65
93
-70
0.5
RG1=120KOHm_15m
1
1.5
2
2.5
3
V
92
0
4
VG2S
5
10
15
20
25
30
35
40 dB
50
AGC
6
2009-10-01
BF5020...
Test circuit for Crossmodulation / AGC
VAGC
VDS
4n7
R1
10kΩ
2.2 uH
4n7
4n7
RL
50Ω
RGEN
50Ω
4n7
50 Ω
RG1
VGG
Semibiased
7
2009-10-01
Package SOT143
BF5020...
2
0.1 MAX.
10˚ MAX.
1
1 ±0.1
0.2
0.8 +0.1
-0.05
0.4 +0.1
-0.05
A
5
0...8˚
0.2 M A
0.25 M B
1.7
0.08...0.1
1.3 ±0.1
3
2.4 ±0.15
4
B
10˚ MAX.
2.9 ±0.1
1.9
0.15 MIN.
Package Outline
Foot Print
1.2
0.8
0.9
1.1
0.9
0.8 1.2 0.8
0.8
Marking Layout (Example)
RF s
56
Manufacturer
Pin 1
2005, June
Date code (YM)
BFP181
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
2.6
8
4
Pin 1
3.15
1.15
8
2009-10-01
Package SOT143R
BF5020...
Package Outline
2
0.2
0.08...0.15
A
+0.1
0.8 -0.05
0.4 +0.1
-0.05
0˚... 8˚
1.7
0.25
10˚ MAX.
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1.9
4
1 ±0.1
0.15 MIN.
2.9 ±0.1
M
0.2
M
A
B
Foot Print
1.2
0.8
0.9
1.1
0.9
0.8
0.8
0.8
1.2
Marking Layout (Example)
Reverse bar
2005, June
Date code (YM)
Pin 1
Manufacturer
BFP181R
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
2.6
8
4
Pin 1
3.15
1.15
9
2009-10-01
Package SOT343
BF5020...
Package Outline
0.9 ±0.1
2 ±0.2
0.1 MAX.
1.3
0.1
A
1
2
0.1 MIN.
0.15
1.25 ±0.1
3
2.1 ±0.1
4
0.3 +0.1
-0.05
+0.1
0.15 -0.05
+0.1
0.6 -0.05
4x
0.1
0.2
M
M
A
Foot Print
1.6
0.8
0.6
1.15
0.9
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BGA420
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
2.3
8
4
Pin 1
2.15
1.1
10
2009-10-01
BF5020...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office ( www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
11
2009-10-01
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