DIODES MBRM360-13

MBRM360
3A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
POWERMITEâ3
NEW PRODUCT
Features
·
·
·
·
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
Low Reverse Current
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
G
P
3
·
·
·
·
·
·
Case: POWERMITEâ3, Molded Plastic
Plastic Material: UL Flammability
Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: See Page 3
Weight: 0.072 grams (approx.)
Ordering Information: See Page 3
J
B
Min
Max
A
4.03
4.09
B
6.40
6.61
H
D
E
1
G
2
M
D
K
C
C
PIN 1
Pins 1 & 2 must be electrically
connected at the printed circuit board.
1.83 NOM
1.10
1.14
.178 NOM
5.01
5.17
J
4.37
4.43
L
PIN 3, BOTTOMSIDE
HEAT SINK
.889 NOM
H
K
L
PIN 2
Note:
Maximum Ratings
Dim
C
Mechanical Data
·
·
POWERMITEâ3
E
A
.178 NOM
.71
.77
M
.36
.46
P
1.73
1.83
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Value
Unit
VRRM
VRWM
VR
60
V
VR(RMS)
42
V
IO
3
A
IFSM
100
50
A
RqJS
3.2
°C/W
Tj
-55 to +125
°C
TSTG
-55 to +150
°C
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(See also Figure 5)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
@ TC = 25°C
@ TC = 100°C
Typical Thermal Resistance Junction to Soldering Point
Operating Temperature Range
Storage Temperature Range
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Symbol
Min
V(BR)R
60
Forward Voltage (Note 1)
VFM
¾
¾
¾
¾
Reverse Current (Note 1)
IRM
¾
¾
¾
Total Capacitance
CT
¾
Characteristic
Reverse Breakdown Voltage (Note 1)
Notes:
Typ
Max
Unit
¾
¾
V
IR = 0.2mA
0.59
0.53
0.72
0.63
0.63
0.57
0.76
0.67
V
IF = 3A, Tj = 25°C
IF = 3A, Tj = 125°C
IF = 6A, Tj = 25°C
IF = 6A, Tj = 125°C
2.0
0.6
2.5
200
20
150
mA
mA
mA
Tj = 25°C, VR = 60V
Tj = 100°C, VR = 60V
Tj = 125°C, VR = 60V
130
¾
pF
f = 1.0MHz, VR = 4.0V DC
Test Condition
1. Short duration test pulse used to minimize self-heating effect.
DS30355 Rev. 2 - 2
1 of 3
MBRM360
IR, INSTANTANEOUS REVERSE CURRENT (mA)
IF, INSTANTANEOUS FORWARD CURRENT (A)
Tj = +125ºC
1.0
Tj = +25ºC
Tj = +100ºC
0.1
0.01
0
0.2
0.4
0.6
0.8
10,000
Tj = +125°C
1000
Tj = +100°C
100
Tj = +75°C
10
1
Tj = +25°C
0.1
1.0
0
20
10
30
40
50
60
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typ. Forward Characteristics
1000
100
Single Half-Sine-Wave
(JEDEC Method)
f = 1MHz
CT, TOTAL CAPACITANCE (pF)
IFSM, PEAK FWD SURGE CURRENT (A)
NEW PRODUCT
10
80
60
TC = +25ºC
40
TC = +100ºC
20
100
10
0
1
10
0
100
15
22.5 30
37.5 45
52.5
60
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Capacitance vs. Reverse Voltage
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
DS30355 Rev. 2 - 2
7.5
2 of 3
MBRM360
PF(AV), AVERAGE FORWARD POWER DISSIPATION (W)
IF, DC FORWARD CURRENT (A)
NEW PRODUCT
4
3.5
Note 2
3
2.5
Note 3
2
Note 4
1.5
1
0.5
0
25
Notes:
125
75
100
50
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 DC Forward Current Derating
Tj = 125°C
Note 5
3
2
1
Note 6
0
0
1
2
3
4
5
6
7
IF(AV), AVERAGE FORWARD CURRENT (A)
Fig. 6 Forward Power Dissipation
2. TA = TSOLDERING POINT, RqJS = 3.2°C/W, RqSA = 0°C/W.
3. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad
dimensions 0.25” x 1.0”. RqJA in range of 20-40°C/W.
4. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of
100-120°C/W.
5. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 3.
6. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 4.
Ordering Information
Notes:
150
4
(Note 7)
Device
Packaging
Shipping
MBRM360-13
POWERMITEâ3
5000/Tape & Reel
7. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
MBRM360
YYWW
MBRM360 = Product type marking code
= Manufacturers’ code marking
YYWW = Date code marking
YY = Last digit of year ex: 2 for 2002
WW = Week code 01 to 52
POWERMITE is a registered trademark of Microsemi Corporation.
DS30355 Rev. 2 - 2
3 of 3
MBRM360