LMN400B01 Lead-free Green 400mA LOAD SWITCH FEATURING PNP TRANSISTOR AND N-MOSFET WITH GATE PULL-DOWN RESISTOR NEW PRODUCT General Description • LMN400B01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete pass transistor with stable VCE(SAT) which does not depend on input voltage and can support continuous maximum current of 400 mA . It also contains a discrete N-MOSFET with gate pull-down resistor that can be used as control. The component devices can be used as a part of a circuit or as a stand alone discrete device. 6 5 4 1 2 3 Features • • • • • • Fig. 1: SOT-26 Voltage Controlled Small Signal Switch N-MOSFET with Gate Pull-Down Resistor C_Q1 B_Q1 S_Q2 6 5 4 Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free By Design/ROHS Compliant (Note 1) "Green" Device (Note 2) C Q1 PNP Mechanical Data • • • • • • • • DDTB122LU_DIE B R2 R3 220 E R1 Case: SOT-26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 10K 37K S G Q2 NMOSFET D DSNM6047_DIE Moisture sensitivity: Level 1 per J-STD-020C 1 2 E_Q1 G_Q2 Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 3 D_Q2 Fig. 2 Schematic and Pin Configuration Marking & Type Code Information: See Last Page Ordering Information: See Last Page Weight: 0.016 grams (approx.) Reference Device Type R1 (NOM) DDTB122LU_DIE Sub-Components Q1 PNP Transistor 10K R2 (NOM) R3 (NOM) 220 Figure 2 DSNM6047_DIE (with Gate Pull-Down Resistor) Q2 N-MOSFET 37K 2 Maximum Ratings, Total Device @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Pd 300 mW Power Derating Factor above 100°C Pder 2.4 mW/°C Output Current Iout 400 mA Power Dissipation (Note 3) Thermal Characteristics Characteristic Junction Operation and Storage Temperature Range Thermal Resistance, Junction to Ambient Air (Note 3) (Equivalent to one heated junction of PNP transistor) Notes: Symbol Value Unit Tj, Tstg -55 to +150 °C RθJA 417 °C/W 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30699 Rev. 5 - 2 1 of 10 www.diodes.com LMN400B01 Diodes Incorporated NEW PRODUCT Maximum Ratings: Sub-Component Device: Pre-Biased PNP Transistor (Q1) @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO -50 V Collector-Emitter Voltage VCEO -50 V V Supply Voltage Vcc -50 Input Voltage Vin +5 to -6 V Output Current IC -400 mA Sub-Component Device: N-MOSFET with Gate Pull-Down Resistor (Q2) @ TA = 25°C unless otherwise specified Symbol Value Unit Drain-Source Voltage Characteristic VDSS 60 V Drain Gate Voltage (RGS ≤1MOhm) VDGR 60 V Gate-Source Voltage Continuous VGSS Pulsed (tp<50 uS) Drain Current (Page 1: Note 3) Continuous (Vgs = 10V) Pulsed (tp <10 uS, Duty Cycle <1%) Continuous Source Current DS30699 Rev. 5 - 2 ID IS 2 of 10 www.diodes.com +/-20 +/-40 115 800 115 V mA mA LMN400B01 NEW PRODUCT Electrical Characteristics: Pre-Biased PNP Transistor (Q1) @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Cut Off Current ICBO -100 nA VCB = -50V, IE = 0 Collector-Emitter Cut Off Current ICEO -500 nA VCE = -50V, IB = 0 Emitter-Base Cut Off Current IEBO -1 mA VEB = -5V, IC = 0 Collector-Base Breakdown Voltage V(BR)CBO -50 V IC = -10 uA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -50 V IC = -2 mA, IB = 0 VI(OFF) -0.5 V VCE = -5V, IC = -100uA VOH -4.9 V VCC = -5V, VB = -0.05V, RL = 1K IO(OFF) -500 nA VCC = -50V, VI = 0V -0.055 -0.15 V IC = -10mA, IB = -0.3mA -0.25 -0.3 V IC = -100mA, IB = -1mA -0.12 -0.15 V IC = -200mA, IB = -20mA -0.16 -0.2 V IC = -300mA, IB= -30mA -0.2 -0.25 V IC = -400mA, IB= -40mA -0.25 -0.3 V IC = -500mA, IB = -50mA 1.125 Ω IC = 400mA, IB = 20mA 70 220 VCE = -5V, IC = -50 mA 70 260 VCE = -5V, IC = -100 mA 70 265 VCE = -5V, IC = -200 mA 70 225 VCE = -5V, IC = -400 mA VI(ON) -2.45 -1.5 V VO = -0.3V, IIC = -2 mA VOL -0.1 -0.3 V VCC = -5V, VB = -2.5V, Io/II = -50mA /-2.5mA OFF CHARACTERISTICS Input Off Voltage Output Voltage Ouput Current (leakage current same as ICEO) ON CHARACTERISTICS Collector-Emitter Saturation Voltage Equivalent on-resistance* DC Current Gain Input On Voltage Output Voltage (equivalent to VCE(SAT) or VO(on)) VCE(SAT) RCE(SAT) hFE Ii -18 -28 mA Base-Emitter Turn-on Voltage VBE(ON) -1.2 -1.3 V Base-Emitter Saturation Voltage VBE(SAT) -1.9 -2.2 -5.25 -5.5 R2 0.22 KΩ Pull-up Resistor (Base to Vcc supply), +/- 30% R1 10 KΩ Resistor Ratio (Input Resistor/Pullup resistor) R1/R2 0.022 Transition Frequency (gain bandwidth product) fT 200 Collector capacitance, (Ccbo-Output Capacitance) CC 20 Input Current Input Resistor (Base), +/- 30% V VI = -5V VCE = -5V, IC = -400mA IC = -50mA, IB = -5mA IC = -400mA, IB = -20mA SMALL SIGNAL CHARACTERISTICS CE = -10V, IE = -5mA, MHz V f = 100MHz pF VCB = -10V, IE = 0A, f = 1MHz * Pulse Test: Pulse width, tp <300 µS, Duty Cycle, d ≤0.02 DS30699 Rev. 5 - 2 3 of 10 www.diodes.com LMN400B01 Characteristic Symbol Min Typ Max Unit Test Condition V(BR)DSS 60 V VGS = 0V, ID = 10uA IDSS 1 µA VGS =0V, VDS = 60V Gate-Body Leakage Current, Forward IGSSF 0.95 mA VGS = 20V, VDS = 0V Gate-Body Leakage Current, Reverse IGSSR -0.95 mA VGS = -20V, VDS = 0V Gate Source Threshold Voltage (Control Supply Voltage) VGS(th) 1 1.86 2.2 V Static Drain-Source On-State Voltage VDS(on) 0.08 1.5 0.15 3.75 500 1.55 3 1.4 2 80 240 OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage, BVDSS Zero Gate Voltage Drain Current (Drain Leakage Current) ON CHARACTERISTICS (Note 4) ID(on) On-State Drain Current RDS(on) Static Drain-Source On Resistance V mA Ω VDS = VGS, ID = 0.25mA VGS = 5V, ID = 50mA VGS = 10V, ID = 115mA VGS = 10V, VDS ≥ 2 x VDS(ON) VGS = 5V, ID = 50mA VGS = 10V, ID = 500mA VDS ≥2 x VDS(ON), ID = 115 mA Forward Transconductance gFS 80 350 Gate Pull-Down Resistor, +/- 30% R3 37 KΩ Input Capacitance Ciss 50 pF Output Capacitance Coss 25 pF Reverse Transfer Capacitance Crss 5 pF Turn-On Delay Time td(on) 20 ns Turn-Off Delay Time td(off) 40 ns VDD = 30V, VGS =10V, ID = 200mA, RG = 25Ω, RL = 150Ω VGS = 0V, IS = 115 mA* mS VDS ≥2 x VDS(ON), ID = 200 mA DYNAMIC CHARACTERISTICS VDS = -25V, VGS = 0V, ƒ= 1MHz SWITCHING CHARACTERISTICS* SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward On-Voltage Maximum Continuous Drain-Source Diode Forward Current (Reverse Drain Current) Maximum Pulsed Drain-Source Diode Forward Current VSD 0.88 1.5 V IS 115 mA ISM 800 mA * Pulse Test: Pulse width, tp <300 µS, Duty Cycle, d ≤0.02 Notes: 4. Short duration test pulse used to minimize self-heating effect. Typical Characteristics 500 350 lb = 8mA 450 IC, COLLECTOR CURRENT (mA) 300 PD, POWER DISSIPATION (mW) NEW PRODUCT Electrical Characteristics: N-MOSFET with Gate Pull-Down Resistor (Q2) @ TA = 25°C unless otherwise specified 250 200 150 100 50 lb = 9mA 400 lb = 10mA 350 lb = 7mA TA = 25°C lb = 6mA lb = 5mA lb = 4mA lb = 3mA 300 lb = 2mA 250 200 lb = 1mA 150 100 50 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 3, Max Power Dissipation vs Ambient Temperature DS30699 Rev. 5 - 2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VCE_SAT COLLECTOR VOLTAGE(V) Fig. 4, Output Current vs. Voltage Drop (Pass Element PNP) 4 of 10 www.diodes.com LMN400B01 Pre-Biased PNP Transistor Characteristics 0.6 0.2 TA = -55°C TA = 25°C TA = 125°C 0.1 TA = 85°C TA = 150°C IC/IB = 20 VCE(SAT), COLLECTOR VOLTAGE (V) VCE(SAT), COLLECTOR VOLTAGE (V) IC/IB = 10 0.5 0.4 0.3 TA = 125°C TA = 25°C TA = 150°C 0.1 TA = 85°C 0 0.01 1 0.1 0.01 TA =-55°C 0.2 0 0.1 1 IC, COLLECTOR CURRENT (A) Fig. 6 VCE(SAT) vs. IC IC, COLLECTOR CURRENT (A) Fig. 5 VCE(SAT) vs. IC 15 12 IC/IB = 10 VBE(ON), BASE EMITTER VOLTAGE (V) VBE(SAT), BASE EMITTER VOLTAGE (V) 10 8 6 4 TA = -55°C TA = 125°C TA = 150°C 2 TA = 25°C IC/IB = 10 VCE = 5V 12 9 6 TA = -55°C TA = 125°C 3 TA = 150°C TA = 85°C TA = 25°C TA = 85°C 0 0 1 10 100 1000 10 IC, COLLECTOR CURRENT (mA) Fig. 7 VBE(SAT) vs. IC 100 1000 10000 IC, COLLECTOR CURRENT (mA) Fig. 8 VBE(ON) vs. IC VCE = 5V 400 hFE, DC CURRENT GAIN NEW PRODUCT 0.3 TA = 150°C TA = 125°C 300 TA = 85°C TA = 25°C 200 TA =-55°C 100 0 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 9 hFE vs. IC DS30699 Rev. 5 - 2 5 of 10 www.diodes.com LMN400B01 Typical N-Channel MOSFET (Q2) Characteristics 1.4 1.4 VDS = 10V VGS = 10V TA =-55°C 1.2 1.2 1.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 6V VGS = 5V VGS = 8V 0.8 VGS = 4V 0.6 0.4 0.2 TA = 25°C TA = 125°C 1 TA = 85°C 0.8 0.6 TA = 150°C 0.4 0.2 VGS = 3V 0 0 0 1 2 0 5 4 3 2 1 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Output Characteristics 4 3 6 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 11 Transfer Characteristics 6 2.2 VGS(th), GATE THRESHOLD VOLTAGE (V) VDS = 10V VDS = VGS ID = 0.25mA Pulsed 2 VGS = 5V Pulsed 5 1.8 4 TA = 125°C 1.6 3 1.4 2 TA = 150°C TA = 85°C 1.2 TA = 25°C 1 1.0 -75 -50 -25 0 25 50 75 TA = -55°C 0 0.001 100 125 150 0.1 0.01 ID, DRAIN CURRENT (A) Fig. 13 Static Drain-Source On-Resistance vs. Drain Current TJ, JUNCTION TEMPERATURE (°C) Fig. 12 Gate Threshold Voltage vs. Junction Temperature 1 7 4 VGS = 10V Pulsed RDS(ON), STATIC DRAIN-SOURCE ON-STATE RESISTANCE (W) NEW PRODUCT TA = 25°C 3 TA = 125°C 2 TA = 150°C TA = 85°C TA = 25°C TA = -55°C 1 TA = 25°C Pulsed 6 5 4 ID = 115mA 3 2 ID = 50mA 1 0 0 0.01 0.001 1 0.1 ID, DRAIN CURRENT (A) Fig. 14 Static Drain-Source On-Resistance vs. Drain Current DS30699 Rev. 5 - 2 6 of 10 www.diodes.com 0 2 4 6 8 10 12 14 16 18 20 VGS, GATE SOURCE VOLTAGE (V) Fig. 15 Static Drain-Source On-Resistance vs. Gate-Source Voltage LMN400B01 1 2.5 ID = 115mA 2 ID = 50mA 1.5 1 TA = 125°C IS, REVERSE DRAIN CURRENT (A) NEW PRODUCT VGS = 10V Pulsed TA = 150°C TA = 25°C TA = 85°C 0.1 TA = -55°C 0.01 VGS = 5V Pulsed 0.5 0.001 -75 -50 -25 0 25 50 75 100 125 150 0.5 0 Tj, JUNCTION TEMPERATURE (°C) Fig. 16 Static Drain-Source On-State Resistance vs. Junction Temperature VGS = 10V gFS, FORWARD TRANSCONDUCTANCE (mS) IS, REVERSE DRAIN CURRENT (A) 1 TA= 25°C =25 C Pulsed VGS = 5V 0.1 0.01 0.001 0 0.5 1 1.5 2 2.5 VSD, BODY DIODE FORWARD VOLTAGE (V) Fig. 18 Reverse Drain Current vs. Body Diode Forward Voltage DS30699 Rev. 5 - 2 1 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 17 Reverse Drain Current vs. Source-Drain Voltage 7 of 10 www.diodes.com 900 800 TA = -55°C TA = 25°C 700 600 TA = 85°C 500 400 TA = 125°C TA = 150°C 300 200 100 0 0 0.2 0.4 0.8 0.6 ID, DRAIN CURRENT (A) Fig. 19 Forward Transconductance vs. Drain Current (VDS > ID *RDS(ON)) LMN400B01 NEW PRODUCT Application Details • PNP Transistor (DDTB122LU) and N-MOSFET (DSNM6047) with gate pull-down resistor integrated as one in LMN400B01 can be used as a discrete entity for general application or as an integrated circuit to function as a Load Switch. When it is used as the latter as shown in Fig 20, various input voltage sources can be used as long as it does not exceed the maximum ratings of the device. These devices are designed to deliver continuous output load current up to a maximum of 400 mA. The MOSFET Switch draws no current, hence loading of control circuit is prevented. Care must be taken for higher level of dissipation while designing for higher load conditions. These devices provide high power and also consumes less space. The product mainly helps in optimizing power usage, thereby conserving battery life in a controlled load system like portable battery powered applications. (Please see Fig. 21 for one example of a typical application circuit used in conjunction with voltage regulator as a part of power management system) Vin E Vout DDTB122LU C Q1 PNP B R1 10K LOAD R2 220 D DSNM6047 S NMOSFET Q2 G Control R3 37K Fig 20 : Circuit Diagram Typical Application Circuit 5V Supply U1 U3 Load Switch Vin U2 Control Logic Circuit (PIC, Comparator etc) GND Vin OUT1 1 Control 2 3 E_Q1 C_Q1 G_Q2 B_Q1 D_Q2 S_Q2 LMN400B01 6 Vout Point of Load IN OUT 5 4 Gnd Voltage Regulator Diodes Inc. Fig 21 DS30699 Rev. 5 - 2 8 of 10 www.diodes.com LMN400B01 Note: (Note 5) Device Marking Code Packaging Shipping LMN400B01-7 PM3 SOT-26 3000/Tape & Reel 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information PM3 YM NEW PRODUCT Ordering Information PM3 = Product Type Marking Code, YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September Fig. 22 Date Code Key Year 2006 2007 2008 2009 Code T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30699 Rev. 5 - 2 9 of 10 www.diodes.com LMN400B01 NEW PRODUCT Mechanical Details SOT-26 A B C H K M J D L F Dim Min Max Typ A 0.35 0.5 0.38 B 1.5 1.7 1.6 C 2.7 3 2.8 D - - 0.95 F - - 0.55 H 2.9 3.1 3 J 0.013 0.1 0.05 K 1 1.3 1.1 L 0.35 0.55 0.4 M 0.1 0.2 0.15 α 0° 8° - All Dimensions in mm Fig. 23 Suggested Pad Layout: (Based on IPC-SM-782) E Z E C G Y X Figure 24 Dimensions SOT-26* Z 3.2 G 1.6 X 0.55 Y 0.8 C 2.4 E 0.95 * Typical dimensions in mm Fig. 24 IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS30699 Rev. 5 - 2 10 of 10 LMN400B01