Diotec BFS19 Surface mount si-epitaxial planartransistor Datasheet

BFS 19
High Frequency Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
Power dissipation – Verlustleistung
1.3 ±0.1
2.5 max
3
Type
Code
2
1
250 mW
Plastic case
Kunststoffgehäuse
1.1
2.9 ±0.1
0.4
1.9
Dimensions / Maße in mm
1=B
2=E
3=C
NPN
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C)
Grenzwerte (TA = 25/C)
BFS 19
Collector-Emitter-voltage
B open
VCE0
20 V
Collector-Base-voltage
E open
VCB0
30 V
Emitter-Base-voltage
C open
VEB0
5V
Power dissipation – Verlustleistung
Ptot
250 mW 1)
Collector current – Kollektorstrom (dc)
IC
30 mA
Peak Collector current – Kollektor-Spitzenstrom
ICM
30 mA
Junction temperature – Sperrschichttemperatur
Tj
150/C
Storage temperature – Lagerungstemperatur
TS
- 65…+ 150/C
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 20 V
ICB0
–
–
100 nA
IE = 0, VCB = 20 V, Tj = 100/C
ICB0
–
–
10 :A
IEB0
–
–
100 nA
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 5 V
1
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2
01.11.2003
High Frequency Transistors
BFS 19
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
65
–
225
650 mV
–
750 mV
–
260 MHz
–
–
1 pF
–
–
0.85 pF
–
DC current gain – Kollektor-Basis-Stromverhältnis 1)
VCE = 10 V, IC = 1 mA
hFE
Base-Emitter voltage – Basis-Emitter-Spannung 1)
VCE = 10 V, IC = 1 mA
VBEon
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
Feedback Capacitance – Rückwirkungskapazität
VCB = 10 V, IC = ic = 0, f = 1 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Marking - Stempelung
RthA
420 K/W 2)
BFS 19 = F2
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
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