DIODES BAS70H

BAS70H/ -04/ -05/ -06
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
·
·
·
Low Turn-on Voltage
Fast Switching
PN Junction Guard Ring for Transient and
ESD Protection
DISCONTINUED USE BAS70 SERIES
A
TOP VIEW
Mechanical Data
·
·
·
·
SOT-23
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagrams
Approx. Weight: 0.008 grams
B
C
D
E
G
H
M
K
J
L
Dim
A
Min
Max
0.37
0.51
B
1.19
1.40
C
2.10
2.50
D
0.89
1.05
E
0.45
0.61
G
1.78
2.05
H
2.65
3.05
J
0.013
0.15
K
0.89
1.10
L
0.45
0.61
M
0.076
0.178
All Dimensions in mm
BAS70H-04 Marking: K74
BAS70H Marking: K73
BAS70H-06 Marking: K76
BAS70H-05 Marking: K75
Maximum Ratings and Electrical Characteristics, Single Diode@ TA = 25°C unless otherwise specified
Characteristic
Symbol
BAS70
Unit
VRRM
VRWM
VR
70
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
VR(RMS)
49
V
IF
200
mA
IFSM
600
mA
Pd
200
mW
RqJA
625
K/W
Tj
-55 to +125
°C
TSTG
-65 to +150
°C
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ tp < 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Storage Temperature Range
Electrical Ratings
@ TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2)
Symbol
Min
V(BR)R
Max
Unit
70
—
V
mV
Test Condition
IR = 10mA
tp <300µs, IF = 1.0mA
tp <300µs, IF = 15mA
Forward Voltage
VF
—
410
1000
Peak Reverse Current
IRM
¾
100
nA
tp < 300µs, VR = 50V
Junction Capacitance
Cj
¾
2.0
pF
VR = 0V, f = 1.0MHz
Reverse Recovery Time
trr
—
5.0
ns
IF = IR = 10mA to IR = 1.0mA,
RL =100W
Notes:
1. Valid Provided that terminals are kept at ambient temperature.
2. Test period <3000ms.
DS30190 Rev. 4 - 4
1 of 1
BAS70H/-04/-05/-06