DIODES ZXSC100N8

ZXSC100
SINGLE CELL DC-DC CONVERTER SOLUTION
DESCRIPTION
The ZXSC100 series is designed for DC-DC
applications where step-up voltage conversion from
very low input voltages is required. These applications
mainly operate from single nickel cadmium or nickel
metal hydride battery cells.
The IC and discrete combination offers the ultimate
cost vs performance solution for single cell DC-DC
conversion.
The circuit can start up under full load with regulation
maintained down to an input voltage of only 0.926
volts. The solution configuration ensures optimum
efficiency over a wider range of load currents, several
circuit configurations are possible with power
dissipation up to 2W. The step up output voltage is
easily programmed with external resistors, the
non-synchronous architecture and SuperSOT4™
device enabling an output voltage down to the input
voltage level. For best performance the ZXSC100
quiescent current is a small 150µA ensuring minimum
battery drain in no load conditions.
FEATURES
APPLICATIONS(continued)
• Efficiency maintained over a wide range of input
• Hand held instruments
• Portable medical equipment
• Solar powered equipment
voltages and load currents
82% efficiency @ VBATT=1V
•
•
•
•
Startup under full load
Minimum operating input voltage VBATT=0.926V
TYPICAL APPLICATION CIRCUIT
Adjustable output voltage down to VBATT
Quiescent current typically 150µA referred to
input voltage
• MSOP8 package
L1
VBATT
D1
• SO8 package
R1
Q1
Cordless telephones
MP3 players
PDA
Pagers
Battery backup supplies
Electronic toothbrush
GPS receivers
Digital camera
Palmtop computers
R3
FMMT617
U1
APPLICATIONS
•
•
•
•
•
•
•
•
•
3.3V/0.1A
ZHCS1000
EM
VDRIVE
BAS
ISENSE
C3
C2
RE
FB
VCC
GND
ZXSC100
R2
C1
R4
ORDERING INFORMATION
DEVICE
Package
Partmarking
Reel
size
Tape
width
Quantity per
reel
ZXSC100X8
MSOP8
ZXSC100
7”
12mm
1,000
ZXSC100N8
SO8
ZXSC100
7”
12mm
500
ISSUE 3 - JANUARY 2004
1
SEMICONDUCTORS
ZXSC100
ABSOLUTE MAXIMUM RATING
Supply voltage
Maximum voltage other pins
0.3 to 3.5V
0.3 to VCC+0.3V
Operating temperature
Storage temperature
Junction temperature
Power dissipation (25°C)
MSOP8
SO8
500mW
780mW
0 to 70°C
-55 to 150°C
150°C
ELECTRICAL CHARACTERISTICS (Unless otherwise stated) VCC=1.2V, TA = 25°C
Symbol
Parameter
Conditions
I CC
Quiescent current
Not switching
I DRIVE
Base drive current
V RE = V CC
5
V DRIVE
V DRIVE o/p voltage
V RE = V CC , I DRIVE = 5mA
V CC - 0.17
V FB
Feedback voltage
708
730
752
mV
V ISENSE
Output current reference
voltage
12
17.5
24
mV
T CVISENSE
I SENSE voltage temp co.
V DREF
Drive current reference
voltage
T CVDREF
V DREF temp co.
V CC(SRT)
Startup voltage
V CC(min)
Minimum operating
input voltage
V CC(hys)
Supply start up to
shutdown hysteresis
80
I FB
Feedback input current
100
200
nA
I ISENSE
I SENSE input current
4
5.5
µA
V O(min)
Minimum output voltage
V O(max)
Maximum output voltage
T OFF
Discharge pulse width
(1)
Min.
Typ.
Max. Units
150
200
µA
10
mA
V
0.4
Measured with respect to VCC
20
30
%/°C
40
1
Any output load
V ISENSE = 0V
mV
%/°C
1.01
1.06
1.1
V
0.926
0.98
1
V
3
mV
V CC
V
FMMT617as pass element (1)
1.7
3
20
V
4
µs
Depends on breakdown voltage of pass device. See FMMT617 datasheet
ISSUE 3 - JANUARY 2004
SEMICONDUCTORS
2
ZXSC100
OPERATING CONDITIONS
Symbol
F OSC
2
3
Parameter
Conditions
Recommended operating frequency
Min
Typ
3
Max
Units
200
kHz
These parameters guaranteed by design and characterization
Operating frequency is application circuit dependant. See applications section
FMMT617
For the circuits described in the applications section, Zetex FMMT617 is the recommended pass transistor. The
following indicates outline data for the transistor, more detailed information can be found at www.zetex.com
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
Collector-emitter breakdown voltage
V (BR)CEO
15
Collector-emitter saturation voltage
V CE(sat)
TYP.
MAX.
18
UNIT
CONDITIONS
V
I C =10mA*
8
14
mV
I C =0.1A, I B =10mA*
70
100
mV
I C =1A, I B =10mA*
150
200
mV
I C =3A, I B =50mA*
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ZHCS1000
For the circuits described in the applications section Zetex ZHCS1000 is the recommended Schottky diode. The
following indicates outline data for the ZHCS, more detailed information is available at www.zetex.com
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
Forward voltage
MIN.
TYP.
MAX.
UNIT
CONDITIONS
VF
500
mV
I F =1A
Reverse current
IR
100
µA
V R =30V
Reverse recovery time
t rr
ns
Switched from
IF = 500mA to
IR = 500mA.
Measured at IR=50mA
12
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ISSUE 3 - JANUARY 2004
3
SEMICONDUCTORS
ZXSC100
TYPICAL CHARACTERISTICS
2.0
1.5
Output Voltage (%)
Quiescent Current (µA)
300
250
200
150
100
1.0
1.5
2.0
1.0
0.5
0.0
-0.5
-1.0
-1.5
-2.0
-10
2.5
0
10
20
30
40
50
60
70
80
Temperature (°C)
Input Voltage (V)
Quiescent Current v Input Voltage
Output Voltage v Temperature
5.0
2.0
Line Regulation (%)
Load Regulation (%)
1.5
1.0
0.5
0.0
-0.5
-1.0
-1.5
-2.0
0
50m
2.5
0.0
-2.5
-5.0
1.0
100m
Output Current (A)
1.5
2.0
2.5
Input Voltage (V)
Line Regulation
Load Regulation
ISSUE 3 - JANUARY 2004
SEMICONDUCTORS
4
ZXSC100
DEVICE DESCRIPTION
The ZXSC100 is non-synchronous PFM, DC-DC
controller IC which, when combined with a high
performance external transistor, enables the
production of a high efficiency boost converter for use
in single cell applications. A block diagram is shown
for the ZXSC100 in Figure 1.
The driver circuit supplies the external switching
transistor with a defined current, which is
programmed by an external resistor connected
between the RE pin and VCC. The internal reference
voltage for the circuit is 25mV below VCC. To maximise
efficiency the external transistor is switched quickly,
typically being forced off within 20ns.
VCC
In higher power applications more current can be
supplied to the switching transistor by using a further
external component. The driver transistor in the IC can
be bypassed with the addition of a discrete PNP. More
information on this circuit configuration can be found
in the applications section.
Drive
Shutdown
RE
Comp1
I
EM
R1
BAS
VREF
R2
VDRIVE
Comp2
ISENSE
FB
GND
Figure 1
ZXSC100 Block Diagram
A shutdown circuit turns the device on or off at VCC=1V
with a hysteresis of typically 80mV. At start up,
comparator Comp1 turns the driver circuit and
therefore the external switching transistor on. This
circuit will remain active until the feedback voltage at
the pin FB rises above VREF, which is set to 730mV. An
external resistive divider on the FB pin sets the output
voltage level.
Comparator Comp2 forces the driver circuit and the
external switching transistor off, if the voltage at
ISENSE exceeds 25mV. The voltage at ISENSE is taken
from a current sense resistor connected in series with
the emitter of the switching transistor.
A monostable following the output of Comp2 extends
the turn-off time of the output stage by a minimum of
2us. This ensures that there is sufficient time to
discharge the inductor coil before the next on period.
The AND gate between the monostable and Comp1
output ensures that the switching transistor always
remains on until the ISENSE threshold is reached and
that the minimum discharge period is always
asserted. The pulse width is constant, the pulse
frequency varies with the output load.
ISSUE 3 - JANUARY 2004
5
SEMICONDUCTORS
ZXSC100
PIN DESCRIPTIONS
Pin
No.
Name
Description
1
EM
Emitter of internal drive transistor. Connect to RE in lower power applications. Must be
unconnected in higher power applications
2
BAS
Not connected in lower power applications. Connect to base of external drive transistor
in higher power applications
3
RE
Drive current sense input. Internal threshold voltage set 25mV below V CC . Connected
external sense resistor. Connect emitter of external drive transistor in higher power
applications
4
V CC
Supply voltage, generally NiMH, NiCd single cell
5
I SENSE
Inductor current sense input. Internal threshold voltage set to 25mV. Connect external
sense resistor
6
FB
Feedback sense. Internal threshold set to 730mV. Connect external resistive divider to
output voltage
7
G ND
Ground
VDRIVE
GND
EM
1
8
BAS
2
7
RE
3
6
FB
VCC
4
5
ISENSE
REFERENCE DESIGNS
Three typical DC-DC step-up converter applications
for the ZXSC300 are shown. Firstly with a maximum
output power of 0.33W, secondly with a maximum
output power of 1.0W and finally driving white LED’s in
a flashlight application.
Low power solution (330mW) efficiency
ISSUE 3 - JANUARY 2004
SEMICONDUCTORS
6
ZXSC100
Low power solution, VOUT=3.3V, PL=0.33W
L1
VBATT
D1
3.3V/0.1A
ZHCS1000
R1
Q1
R3
FMMT617
U1
EM
VDRIVE
BAS
ISENSE
RE
FB
VCC
GND
ZXSC100
C1
C3
C2
R2
R4
MATERIALS LIST
Ref
Value
Part Number
Manufacturer
Comments
U1
N/A
ZXSC100X8
Zetex Plc
Single cell converter, MSOP8
Q1
20V, 13mΩ, 7A
FMMT617
Zetex Plc
Low VCE(sat) NPN, SOT23
D1
0.5V, 2A
ZHCS1000
Zetex Plc
1A Shottky diode
R1
0Ω*
Generic
Various
0805 Size
R2
33mΩ
Generic
Various
0805 Size
R3
110kΩ
Generic
Various
0805 Size
R4
30kΩ
Generic
Various
0805 Size
C1
220µF
TPSD227M010R0100
AVX
Low ESR tantalum capacitor
C2
220µF
TPSD227M010R0100
AVX
Low ESR tantalum capacitor
C3
1nF
Generic
Various
0805 Size
L1
22µH
D01608C-223
D03316P-223
Coilcraft
Low profile SMT
* Note: Refer to External Transistor base drive selection in the Applications Section.
ISSUE 3 - JANUARY 2004
7
SEMICONDUCTORS
ZXSC100
Higher power solution, VOUT=3.3V, PL=1W
L1
VBATT
D1
3.3V/0.33A
ZHCS1000
R1
Q2
Q1
R3
C3
FMMT617
U1
EM
VDRIVE
BAS
ISENSE
RE
FB
VCC
GND
C2
ZXSC100
R2
C1
R4
MATERIALS LIST
Ref
Value
Part Number
Manufacturer
Comments
U1
N/A
ZXSC100X8
Zetex Plc
Single cell converter, MSOP8
Q1
20V, 13mΩ, 7A
FMMT617
Zetex Plc
Low VCE(SAT) NPN, SOT23
Q2
N/A
2N2907
Various
Small signal transistor
D1
0.5V, 2A
ZHCS1000
Zetex Plc
1A Shottky diode
R1
3.3Ω*
Generic
Various
0805 Size
R2
33mΩ
Generic
Various
0805 Size
R3
110kΩ
Generic
Various
0805 Size
R4
30kΩ
Generic
Various
0805 Size
C1
220µF
TPSD227M010R0100
AVX
Low ESR tantalum capacitor
C2
220µF
TPSD227M010R0100
AVX
Low ESR tantalum capacitor
C3
1nF
Generic
Various
0805 Size
L1
22µH
D01608C-223
D03316P-223
Coilcraft
Low profile SMT
* Note: Refer to External Transistor base drive selection in the Applications Section.
ISSUE 3 - JANUARY 2004
SEMICONDUCTORS
8
ZXSC100
OTHER APPLICATIONS
The circuit itself is very simple, a minimum number
of components are used and they are all small size.
The ZXSC uses the very small MSOP8 package, the
pass transistor is SOT23. No capacitors are required
as the circuit is stable under all conditions. The
inductor recommended is a low cost miniature
component.
L1
VBATT
100µH
Q1
No compromise is made on efficiency however. In a
standard configuration efficiency well over 80% can
be achieved. With careful inductor selection
efficiency over 90% is possible.
FMMT617
U1
EM
VDRIVE
BAS
ISENSE
RE
FB
VCC
GND
D1
WHITE LED
The inherent flexibility of the ZXSC circuit means
that parallel or series LEDs can be driven depending
on application needs. A simple modification to the
application circuit means that the maximum pulse
current can be programmed to match the
characteristics of the chosen LED load, pulse current
in the range 10mA to 3A and beyond can be easily
achieved.
R2
0.22R
ZXSC100
Driving white LED’s in a flashlight application
The ZXSC100 solution is ideal for LED lamp driving
applications operating from a single cell. In principal
conversion from 1.2V to the 3.6V, typically required by
white LEDs, is necessary. Load currents in the region of
20mA to 50mA being required for a single LED element.
An application note (AN33) is available describing
various circuits for driving white LEDs. This
application note includes details of circuits that
optimise battery life, maximise brightness and can
be constructed for minimal cost. Contact your local
Zetex office for further details.
To minimise size, weight and cost, single cell operation
is an advantage. The ZXSC is well matched to single cell
NiCd and NiMH characteristics. The circuit will turn on at
1.06V, to maximise the life the battery can offer, the
converter does not turn off until the battery voltage falls
to 0.93V.
ISSUE 3 - JANUARY 2004
9
SEMICONDUCTORS
ZXSC100
APPLICATIONS INFORMATION
Schottky diode selection
As with the switching transistor the Schottky rectifier
diode has a major impact on the DC-DC converter
efficiency. A Schottky diode with a low forward
voltage and fast recovery time should be used for this
application. The majority of losses in the diode are,
‘on-state’ and can be calculated by using the formula
below:
The following section is a design guide for optimum
converter performance.
Switching transistor selection
The choice of switching transistor has a major impact
on the DC-DC converter efficiency. For optimum
performance, a bipolar transistor with low VCE(SAT)
and high gain is required. The majority of losses in the
transistor are, ‘on-state’ and can be calculated by
using the formula below:
PQ1 =
PD1 =
((IAVxVCE(SAT) ) + ( IBx VBE(SAT) ))xTON
(TON + TOFF) )
where IAV
IAV x VF(MAX) x TDIS
(TOn + TOFF )
where IAV =
I PK
=
2
I PK
2
From the calculations above the impact on converter
efficiency can be seen.
The diode should be selected so that the maximum
forward current is greater or equal to the maximum
peak current in the inductor, and the maximum
reverse voltage is greater or equal to the output
voltage.
External drive transistor selection
For higher power applications an external transistor is
required to provide the additional base drive current
to the main switching transistor. For this, any small
signal PNP transistor is sufficient. Please see reference
designs for recommended part numbers.
Inductor selection
The Zetex ZHCS1000 meets these needs. A data sheet
for the ZHCS1000 is available on the Zetex web site or
through your local Zetex sales office. Outline
information is included in the characteristics section of
this data sheet.
ISSUE 3 - JANUARY 2004
SEMICONDUCTORS
10
ZXSC100
The inductor value must be chosen to satisfy
performance, cost and size requirements of the overall
solution. For the reference designs we recommend an
inductor value of 22µH with a core saturation current
rating greater than the converter peak current value.
Figure 3 shows the discontinuous inductor current and
the relationship between output power, TON, TDIS and
TOFF.
Inductor selection has a significant impact on the
converter efficiency. For applications where efficiency
is critical, a 5% improvement can be achieved with a
high performance inductor. This should be selected
with a core saturation current rating much higher than
the peak current of the converter, say 3 times greater.
The resultant reduction in core losses brings about the
efficiency improvement.
IPK
Peak current definition
The peak current rating is a design parameter whose
value is dependent upon the overall application. For
the reference designs, a peak current of 1.2A was
chosen to ensure that the converter could provide the
required output power.
0A
TDIS
TOFF
In general, the IPK value must be chosen to ensure that
the switching transistor, Q1, is in full saturation with
maximum output power conditions, assuming
worse-case input voltage and transistor gain under all
operating temperature extremes.
Figure 3
Discontinuous inductor current
Once IPK is decided the value of RSENSE can be
determined by:
RSENSE =
Output capacitors
Output capacitors are a critical choice in the overall
performance of the solution. They are required to filter
the output and supply load transient currents. There
are three parameters which are paramount in the
selection of the output capacitors; their capacitance
value, IRIPPLE and ESR. The capacitance value is
selected to meet the load transient requirements. The
capacitors IRIPPLE rating must meet or exceed the
current ripple of the solution.
VISENSE
IPK
Output power definition
By making the above assumptions for the inductor and
IPK the output power can be determined by:
Output Power =
(VOUT − VIN) x IPK x TDIS
2 x (TOn + TOFF )
The ESR of the output capacitor can also affect loop
stability and transient performance. The capacitors
selected for the solution, and indicated in the
reference designs, are optimised to provide the best
overall performance.
where
TON =
and
TDIS =
TON
IPK xL
VIN
IPK xL
(VOUT − VIN)
Note: VOUT = output voltage + rectifier diode VF
ISSUE 3 - JANUARY 2004
11
SEMICONDUCTORS
ZXSC100
Input capacitors
The input capacitor is chosen for its voltage and RMS
current rating. The use of low ESR electrolytic or
tantalum capacitors is recommended. Capacitor
values for optimum performance are suggested in the
reference design section.
VOUT
RA
Also note that the ESR of the input capacitor is
effectively in series with the input and hence
contributes to efficiency losses in the order of IRMS2 x
ESR.
VFB
Output voltage adjustment
The ZXSC100 is an adjustable converter allowing the
end user the maximum flexibility in output voltage
selection. For adjustable operation a potential divider
network is connected as indicated in the diagram.
RB
0V
The output voltage is determined by the equation:
VOUT= VFB (1 + RA / RB),
where VFB=730mV
External transistor base drive selection
Optimisation of the external switching transistor base
drive may be necessary for improved efficiency in low
power applications. This can be achieved by
introducing an external resistor between the supply
and the RE pin of the ZXSC300. The resistor value can
be determined by:
The resistor values, RA and RB, should be maximised
to improve efficiency and decrease battery drain.
Optimisation can be achieved by providing a
minimum current of IFB(MAX)=200nA to the VBATT pin.
The output is adjustable from VFB to the (BR)VCEO of
the switching transistor, Q1.
R1 =
Note: For the reference designs, RA is assigned the
label R3 and RB the label R4.
VDREF
IB
ISSUE 3 - JANUARY 2004
SEMICONDUCTORS
12
ZXSC100
Layout issues
Layout is critical for the circuit to function optimally in
terms of electrical efficiency, thermal considerations
and noise.
minimising parasitic inductance, capacitance and
resistance. Also the sense resistor R2 should be
connected, with minimum trace length, between
emitter lead of Q1 and ground, again minimising stray
parasitics.
For ‘step-up converters’ there are four main current
loops, the input loop, power-switch loop, rectifier loop
and output loop. The supply charging the input
capacitor forms the input loop. The power-switch loop
is defined when Q1 is ‘on’, current flows from the input
through the inductor, Q1, RSENSE and to ground. When
Q1 is ‘off’, the energy stored in the inductor is
transferred to the output capacitor and load via D1,
forming the rectifier loop. The output loop is formed
by the output capacitor supplying the load when Q1 is
switched back off.
The layout for the 0.33W solution is shown below.
Actual Size
To optimise for best performance each of these loops
should be kept separate from each other and
interconnections made with short, thick traces thus
Top silk
Drill holes
Top Copper
Bottom Copper
0.33W solution demo board layout
ISSUE 3 - JANUARY 2004
13
SEMICONDUCTORS
ZXSC100
Designing with the ZXSC100
Introduction
Main switching waveforms
This section refers to the ZXSC100, 3.3V/100mA
output reference design and demonstrates the
dynamic performance of the solution.
Steady state operation under constant load gives an
excellent indication of ZXSC100 performance.
Represented in Figure 3. is the main switching
waveform, measured at the collector of Q1, indicating
the transistor on-state and the diode energy transfer to
the output.
L1
VBATT
D1
3.3V/0.1A
22µH
ZHCS1000
R1
0R
U1
EM
VDRIVE
BAS
ISENSE
Q1
R3 C3
FMMT617
110K
1NF
C2
220µF
FB
RE
VCC
GND
ZXSC100
C1
R2
R4
0.033R
30K
220µF
Figure 1.
ZXSC100 low power solution, 3.3V/100mA output.
Figure 3.
Switching waveform
Efficiency
The peak switching current is derived from the
threshold of the ISENSE pin and the sense resistor value
(see Applications section for calculations). Figure 4.
shows the switching waveform associated with the
ISENSE pin
Efficiency is often quoted as one of the key parameters
of a DC-DC converter. Not only does it give an
instantaneous idea of heat dissipation, but also an
idea as to the extent battery life can be extended.
Figure 2. Shows the efficiency of the ZXSC100 low
power solution. Efficiency v Output current is shown
for a 3.3V output at various input voltages.
L1
VBATT
D1
3.3V/0.1A
22µH
ZHCS1000
R1
0R
U1
EM
VDRIVE
BAS
ISENSE
Q1
R3 C3
FMMT617
110K
1NF
C2
220µF
RE
VCC
FB
GND
ZXSC100
C1
R2
R4
0.033R
30K
220µF
Figure 2.
ZXSC100 efficiency v output current
Figure 4.
ISENSE threshold
ISSUE 3 - JANUARY 2004
SEMICONDUCTORS
14
ZXSC100
Shown in Figure 5. is the discontinuous inductor
current. The ramp-up current stores energy in the
inductor. The switching transistor,Q1, is on during this
time and has an equivalent current ramp-up, shown in
Figure 6. The ramp-down current is associated with
the energy being delivered to the output via the
Schottky diode, D1. The diode current is equivalent to
this ramp-down current and is shown in figure 7.
Figure 7.
Diode current (200mA/div)
Figure 5.
Inductor current (200mA/div)
Figure 6.
Transistor current (200mA/div)
ISSUE 3 - JANUARY 2004
15
SEMICONDUCTORS
ZXSC100
Output voltage ripple
Output voltage ripple is shown in Figure 8. The circuit
is operated with a 1.2V input voltage, 3.3V output
voltage and 100mA load current. Output voltage ripple
will be dependent, to a large extent, on the output
capacitor ESR. (see Applications section for
recommended capacitors).
Figure 8. Output voltage ripple for 3.3V/100mA
output.
Transient response
Transient response to step changes in load is a critical
feature in many converter circuits. The ZXSC100
operates a pulse by pulse regulation scheme and
therefore corrects for changes in the output every
pulse cycle, giving excellent response characteristic.
Measurement with a power supply
When measuring with a power supply it is important
to realise that the impedance is much greater than that
of a secondary battery (NiCd or NiMH). To simulate the
lower impedance of the battery x10 low ESR 1000uF
capacitors where placed in parallel at the input of the
c o n v e r t er . A l l t he dyna m i c per f o r m a n ce
measurements were taken using this technique.
ISSUE 3 - JANUARY 2004
SEMICONDUCTORS
16
ZXSC100
CONNECTION DIAGRAMS
VDRIVE
GND
EM
1
8
BAS
2
7
RE
3
6
FB
VCC
4
5
ISENSE
MSOP8
Millimeters
D
Inches
MAX
MIN
MAX
0.91
1.11
0.036
0.044
A1
0.10
0.20
0.004
0.008
B
0.25
0.36
0.010
0.014
C
0.13
0.18
0.005
0.007
D
2.95
3.05
0.116
0.120
8 7
6 5
2
3 4
E
MIN
A
H
DIM
0.65NOM
e1
eX6
θ°
0.0256NOM
0.33NOM
0.0128NOM
2.95
3.05
0.116
0.120
H
4.78
5.03
0.188
0.198
A1
E
A
e
1
B
C
L
SO8
DIM
A
Millimeters
Inches
MIN
MAX
MIN
MAX
4.80
4.98
0.189
0.196
B
1.27 BSC
0.05 BSC
C
0.53 REF
0.02 REF
D
0.36
0.46
0.014
0.018
E
3.81
3.99
0.15
0.157
F
1.35
1.75
0.05
0.07
G
0.10
0.25
0.004
0.010
J
5.80
6.20
0.23
0.24
© Zetex plc 2004
Europe
Americas
Asia Pacific
Corporate Headquaters
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Zetex plc
Fields New Road, Chadderton
Oldham, OL9 8NP
United Kingdom
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to
www.zetex.com
ISSUE 3 - JANUARY 2004
17
SEMICONDUCTORS