### DIODES ZTX602

```ZTX602
ZTX603
NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
hFE
Static Forward
Current Transfer
Ratio
ZTX602
MIN.
MAX. MIN.
2K
5K
2K
0.5K
2K
5K
2K
0.5K
100K
150
Transition Frequency fT
ZTX603
UNIT
CONDITIONS.
MAX.
IC=50mA, VCE=5V
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
100K
150
MHz
IC=100mA, VCE=10V
f=20MHz
ZTX603
UNIT
80
100
V
VCB=10V, f=1MHz
Collector-Emitter Voltage
VCEO
60
80
IC=500mA, VCE=10V
IB1=IB2=0.5mA
Emitter-Base Voltage
VEBO
10
V
Peak Pulse Current
ICM
4
A
Continuous Collector Current
IC
1
A
Power Dissipation at Tamb = 25°C
derate above 25°C
Ptot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
Output Capacitance
Cobo
15 Typical
pF
1.1 Typical
µs
Maximum Power Dissipation (W)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
RS = 200KΩ
1.0
RS = 50KΩ
RS = 10KΩ
PARAMETER
SYMBOL
ZTX602
MIN.
0.6
DC Conditions
ZTX602
0.2
ZTX603
0
1
10
100
200
VCE - Collector-Emitter Voltage (Volts)
The maximum permissible operational temperature can be obtained from this graph using
the following equation
Power (max ) − Power (act)
=
+25° C
0.0057
Tamb(max)= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a
given VCE and source resistance (RS)
Power(actual)= Actual power dissipation in users circuit
3-210
ZTX603
MAX. MIN.
UNIT
CONDITIONS.
MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO
80
100
V
IC=100µ A
Collector-Emitter
Breakdown Voltage
V(BR)CEO
60
80
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
10
10
V
IE=100µ A
Collector Cut-Off
Current
ICBO
10
µA
µA
µA
µA
VCB=60V
VCB=80V
VCB=60V,T amb =100°C
V CB=80V, T amb =100°C
0.1
µA
VEB=8V
10
µA
µA
VCES=60V
VCES=80V
0.01
10
Voltage Derating Graph
T amb (max )
V
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
RS = 1MΩ
0.8 RS = ∞
0.4
ABSOLUTE MAXIMUM RATINGS.
ZTX602
VEB=500mV, f=1MHz
toff
E-Line
TO92 Compatible
VCBO
pF
µs
E
SYMBOL
90 Typical
0.5 Typical
C
B
Collector-Base Voltage
Cibo
ton
ISSUE 1  MARCH 94
FEATURES
* 80 Volt VCEO
* 1 Amp continuous current
* Gain of 2K at IC=1 Amp
* Ptot= 1 Watt
PARAMETER
Input Capacitance
Switching Times
ZTX602
ZTX603
0.01
Emitter Cut-Off
Current
IEBO
0.1
Colllector-Emitter
Cut-Off Current
ICES
10
Collector-Emitter
Saturation Voltage
VCE(sat)
1.0
1.0
1.0
1.0
V
V
IC=400mA,
IB=0.4mA*
IC=1A, IB=1mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1.8
1.8
V
IC=1A, IB=1mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.7
1.7
V
IC=1A, VCE=5V*
3-209
ZTX602
ZTX603
NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
hFE
Static Forward
Current Transfer
Ratio
ZTX602
MIN.
MAX. MIN.
2K
5K
2K
0.5K
2K
5K
2K
0.5K
100K
150
Transition Frequency fT
ZTX603
UNIT
CONDITIONS.
MAX.
IC=50mA, VCE=5V
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
100K
150
MHz
IC=100mA, VCE=10V
f=20MHz
ZTX603
UNIT
80
100
V
VCB=10V, f=1MHz
Collector-Emitter Voltage
VCEO
60
80
IC=500mA, VCE=10V
IB1=IB2=0.5mA
Emitter-Base Voltage
VEBO
10
V
Peak Pulse Current
ICM
4
A
Continuous Collector Current
IC
1
A
Power Dissipation at Tamb = 25°C
derate above 25°C
Ptot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
Output Capacitance
Cobo
15 Typical
pF
1.1 Typical
µs
Maximum Power Dissipation (W)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
RS = 200KΩ
1.0
RS = 50KΩ
RS = 10KΩ
PARAMETER
SYMBOL
ZTX602
MIN.
0.6
DC Conditions
ZTX602
0.2
ZTX603
0
1
10
100
200
VCE - Collector-Emitter Voltage (Volts)
The maximum permissible operational temperature can be obtained from this graph using
the following equation
Power (max ) − Power (act)
=
+25° C
0.0057
Tamb(max)= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a
given VCE and source resistance (RS)
Power(actual)= Actual power dissipation in users circuit
3-210
ZTX603
MAX. MIN.
UNIT
CONDITIONS.
MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO
80
100
V
IC=100µ A
Collector-Emitter
Breakdown Voltage
V(BR)CEO
60
80
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
10
10
V
IE=100µ A
Collector Cut-Off
Current
ICBO
10
µA
µA
µA
µA
VCB=60V
VCB=80V
VCB=60V,T amb =100°C
V CB=80V, T amb =100°C
0.1
µA
VEB=8V
10
µA
µA
VCES=60V
VCES=80V
0.01
10
Voltage Derating Graph
T amb (max )
V
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
RS = 1MΩ
0.8 RS = ∞
0.4
ABSOLUTE MAXIMUM RATINGS.
ZTX602
VEB=500mV, f=1MHz
toff
E-Line
TO92 Compatible
VCBO
pF
µs
E
SYMBOL
90 Typical
0.5 Typical
C
B
Collector-Base Voltage
Cibo
ton
ISSUE 1  MARCH 94
FEATURES
* 80 Volt VCEO
* 1 Amp continuous current
* Gain of 2K at IC=1 Amp
* Ptot= 1 Watt
PARAMETER
Input Capacitance
Switching Times
ZTX602
ZTX603
0.01
Emitter Cut-Off
Current
IEBO
0.1
Colllector-Emitter
Cut-Off Current
ICES
10
Collector-Emitter
Saturation Voltage
VCE(sat)
1.0
1.0
1.0
1.0
V
V
IC=400mA,
IB=0.4mA*
IC=1A, IB=1mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1.8
1.8
V
IC=1A, IB=1mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.7
1.7
V
IC=1A, VCE=5V*
3-209
ZTX602
ZTX603
1.8
-55°C
+25°C
+100°C
+175°C
1.6
VCE(sat) - (Volts)
1.4
1.2
IC/IB=100
1.0
0.8
0.6
0.4
0.2
0
0.01
1
10
-55°C
+25°C
+100°C
VCE=5V
2.0
1.5
1.0
0.5
0.001
0.01
0.1
1
IC - Collector Current (Amps)
VCE(sat) v IC
hFE v IC
2.2
2.0
-55°C
+25°C
+100°C
+175°C
1.8
10
-55°C
+25°C
+100°C
1.8
1.6
VBE - (Volts)
1.6
1.4
1.2
IC/IB=100
1.0
1.4
1.2
0.8
0.6
0.6
0.4
0.01
0.1
1
0.2
10
IC - Collector Current (Amps)
10
1
D.C.
1s
100ms
10ms
1.0ms
100µs
ZTX602
ZTX603
0.01
10
100
0.1
VBE(on) v IC
Single Pulse Test at Tamb=25°C
1
0.01
1
IC - Collector Current (Amps)
VBE(sat) v IC
0.1
VCE=5V
1.0
0.8
0.4
IC - Collector Current (Amps)
2.5
IC - Collector Current (Amps)
2.0
VBE(sat) - (Volts)
0.1
hFE - Gain normalised to 1 Amp
TYPICAL CHARACTERISTICS
1000
VCE - Collector Voltage (Volts)
Safe Operating Area
3-211
10
```