ZTX602 ZTX603 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL hFE Static Forward Current Transfer Ratio ZTX602 MIN. MAX. MIN. 2K 5K 2K 0.5K 2K 5K 2K 0.5K 100K 150 Transition Frequency fT ZTX603 UNIT CONDITIONS. MAX. IC=50mA, VCE=5V IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* 100K 150 MHz IC=100mA, VCE=10V f=20MHz ZTX603 UNIT 80 100 V VCB=10V, f=1MHz Collector-Emitter Voltage VCEO 60 80 IC=500mA, VCE=10V IB1=IB2=0.5mA Emitter-Base Voltage VEBO 10 V Peak Pulse Current ICM 4 A Continuous Collector Current IC 1 A Power Dissipation at Tamb = 25°C derate above 25°C Ptot 1 5.7 W mW/ °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C Output Capacitance Cobo 15 Typical pF 1.1 Typical µs Maximum Power Dissipation (W) *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% RS = 200KΩ 1.0 RS = 50KΩ RS = 10KΩ PARAMETER SYMBOL ZTX602 MIN. 0.6 DC Conditions ZTX602 0.2 ZTX603 0 1 10 100 200 VCE - Collector-Emitter Voltage (Volts) The maximum permissible operational temperature can be obtained from this graph using the following equation Power (max ) − Power (act) = +25° C 0.0057 Tamb(max)= Maximum operating ambient temperature Power(max) = Maximum power dissipation figure, obtained from the above graph for a given VCE and source resistance (RS) Power(actual)= Actual power dissipation in users circuit 3-210 ZTX603 MAX. MIN. UNIT CONDITIONS. MAX. Collector-Base Breakdown Voltage V(BR)CBO 80 100 V IC=100µ A Collector-Emitter Breakdown Voltage V(BR)CEO 60 80 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 10 10 V IE=100µ A Collector Cut-Off Current ICBO 10 µA µA µA µA VCB=60V VCB=80V VCB=60V,T amb =100°C V CB=80V, T amb =100°C 0.1 µA VEB=8V 10 µA µA VCES=60V VCES=80V 0.01 10 Voltage Derating Graph T amb (max ) V ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). RS = 1MΩ 0.8 RS = ∞ 0.4 ABSOLUTE MAXIMUM RATINGS. ZTX602 VEB=500mV, f=1MHz toff E-Line TO92 Compatible VCBO pF µs E SYMBOL 90 Typical 0.5 Typical C B Collector-Base Voltage Cibo ton ISSUE 1 MARCH 94 FEATURES * 80 Volt VCEO * 1 Amp continuous current * Gain of 2K at IC=1 Amp * Ptot= 1 Watt PARAMETER Input Capacitance Switching Times ZTX602 ZTX603 0.01 Emitter Cut-Off Current IEBO 0.1 Colllector-Emitter Cut-Off Current ICES 10 Collector-Emitter Saturation Voltage VCE(sat) 1.0 1.0 1.0 1.0 V V IC=400mA, IB=0.4mA* IC=1A, IB=1mA* Base-Emitter Saturation Voltage VBE(sat) 1.8 1.8 V IC=1A, IB=1mA* Base-Emitter Turn-On Voltage VBE(on) 1.7 1.7 V IC=1A, VCE=5V* 3-209 ZTX602 ZTX603 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL hFE Static Forward Current Transfer Ratio ZTX602 MIN. MAX. MIN. 2K 5K 2K 0.5K 2K 5K 2K 0.5K 100K 150 Transition Frequency fT ZTX603 UNIT CONDITIONS. MAX. IC=50mA, VCE=5V IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* 100K 150 MHz IC=100mA, VCE=10V f=20MHz ZTX603 UNIT 80 100 V VCB=10V, f=1MHz Collector-Emitter Voltage VCEO 60 80 IC=500mA, VCE=10V IB1=IB2=0.5mA Emitter-Base Voltage VEBO 10 V Peak Pulse Current ICM 4 A Continuous Collector Current IC 1 A Power Dissipation at Tamb = 25°C derate above 25°C Ptot 1 5.7 W mW/ °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C Output Capacitance Cobo 15 Typical pF 1.1 Typical µs Maximum Power Dissipation (W) *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% RS = 200KΩ 1.0 RS = 50KΩ RS = 10KΩ PARAMETER SYMBOL ZTX602 MIN. 0.6 DC Conditions ZTX602 0.2 ZTX603 0 1 10 100 200 VCE - Collector-Emitter Voltage (Volts) The maximum permissible operational temperature can be obtained from this graph using the following equation Power (max ) − Power (act) = +25° C 0.0057 Tamb(max)= Maximum operating ambient temperature Power(max) = Maximum power dissipation figure, obtained from the above graph for a given VCE and source resistance (RS) Power(actual)= Actual power dissipation in users circuit 3-210 ZTX603 MAX. MIN. UNIT CONDITIONS. MAX. Collector-Base Breakdown Voltage V(BR)CBO 80 100 V IC=100µ A Collector-Emitter Breakdown Voltage V(BR)CEO 60 80 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 10 10 V IE=100µ A Collector Cut-Off Current ICBO 10 µA µA µA µA VCB=60V VCB=80V VCB=60V,T amb =100°C V CB=80V, T amb =100°C 0.1 µA VEB=8V 10 µA µA VCES=60V VCES=80V 0.01 10 Voltage Derating Graph T amb (max ) V ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). RS = 1MΩ 0.8 RS = ∞ 0.4 ABSOLUTE MAXIMUM RATINGS. ZTX602 VEB=500mV, f=1MHz toff E-Line TO92 Compatible VCBO pF µs E SYMBOL 90 Typical 0.5 Typical C B Collector-Base Voltage Cibo ton ISSUE 1 MARCH 94 FEATURES * 80 Volt VCEO * 1 Amp continuous current * Gain of 2K at IC=1 Amp * Ptot= 1 Watt PARAMETER Input Capacitance Switching Times ZTX602 ZTX603 0.01 Emitter Cut-Off Current IEBO 0.1 Colllector-Emitter Cut-Off Current ICES 10 Collector-Emitter Saturation Voltage VCE(sat) 1.0 1.0 1.0 1.0 V V IC=400mA, IB=0.4mA* IC=1A, IB=1mA* Base-Emitter Saturation Voltage VBE(sat) 1.8 1.8 V IC=1A, IB=1mA* Base-Emitter Turn-On Voltage VBE(on) 1.7 1.7 V IC=1A, VCE=5V* 3-209 ZTX602 ZTX603 1.8 -55°C +25°C +100°C +175°C 1.6 VCE(sat) - (Volts) 1.4 1.2 IC/IB=100 1.0 0.8 0.6 0.4 0.2 0 0.01 1 10 -55°C +25°C +100°C VCE=5V 2.0 1.5 1.0 0.5 0.001 0.01 0.1 1 IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 2.2 2.0 -55°C +25°C +100°C +175°C 1.8 10 -55°C +25°C +100°C 1.8 1.6 VBE - (Volts) 1.6 1.4 1.2 IC/IB=100 1.0 1.4 1.2 0.8 0.6 0.6 0.4 0.01 0.1 1 0.2 10 IC - Collector Current (Amps) 10 1 D.C. 1s 100ms 10ms 1.0ms 100µs ZTX602 ZTX603 0.01 10 100 0.1 VBE(on) v IC Single Pulse Test at Tamb=25°C 1 0.01 1 IC - Collector Current (Amps) VBE(sat) v IC 0.1 VCE=5V 1.0 0.8 0.4 IC - Collector Current (Amps) 2.5 IC - Collector Current (Amps) 2.0 VBE(sat) - (Volts) 0.1 hFE - Gain normalised to 1 Amp TYPICAL CHARACTERISTICS 1000 VCE - Collector Voltage (Volts) Safe Operating Area 3-211 10