PHILIPS BLF546 Uhf push-pull power mos transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BLF546
UHF push-pull power MOS
transistor
Product specification
October 1992
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
FEATURES
BLF546
PIN CONFIGURATION
• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures
excellent reliability
handbook, halfpage
1
• Designed for broadband operation.
4
d
g
s
g
DESCRIPTION
5
2
Silicon N-channel enhancement
mode vertical D-MOS push-pull
transistor designed for
communications transmitter
applications in the UHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT268 balanced flange
envelope, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
Top view
DESCRIPTION
1
drain 1
2
gate 1
3
gate 2
4
drain 2
5
source
MAM395
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
PINNING - SOT268
PIN
d
3
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a push-pull common source test circuit.
MODE OF OPERATION
CW, class-B
October 1992
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
500
28
80
> 11
> 50
2
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF546
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Per transistor section unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
65
V
±VGS
gate-source voltage
−
20
V
ID
DC drain current
−
9
A
Ptot
total power dissipation
145
W
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
200
°C
up to Tmb = 25 °C; total device; −
both sections equally loaded
THERMAL RESISTANCE
SYMBOL
THERMAL
RESISTANCE
PARAMETER
CONDITIONS
Rth j-mb
thermal resistance from junction to
mounting base
total device; both sections equally
loaded
1.2 K/W
Rth mb-h
thermal resistance from mounting
base to heatsink
total device; both sections equally
loaded
0.25 K/W
MRA995
102
handbook, halfpage
MDA519
200
handbook, halfpage
Ptot
(W)
160
ID
(A)
(2)
120
(1)
10
(2)
(1)
80
40
1
1
10
VDS (V)
0
102
0
80
120
Th (°C)
160
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
(1) Current in this area may be limited by RDS(on).
(2) Tmb = 25 °C.
Total device; both sections equally loaded.
Fig.2 DC SOAR.
October 1992
40
Fig.3 Power/temperature derating curves.
3
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF546
CHARACTERISTICS (per section)
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS
drain-source breakdown voltage
MIN.
TYP. MAX. UNIT
VGS = 0; ID = 20 mA
65
−
−
V
IDSS
drain-source leakage current
VGS = 0; VDS = 28 V
−
−
2
mA
IGSS
gate-source leakage current
±VGS = 20 V; VDS = 0
−
−
1
µA
VGS(th)
gate-source threshold voltage
ID = 80 mA; VDS = 10 V
1
−
4
V
gfs
forward transconductance
ID = 2.4 A; VDS = 10 V
1.2
1.7
−
S
RDS(on)
drain-source on-state resistance
ID = 2.4 A; VGS = 10 V
−
0.4
0.6
Ω
IDSX
on-state drain current
VGS = 15 V; VDS = 10 V
−
10
−
A
Cis
input capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
60
−
pF
Cos
output capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
46
−
pF
Crs
feedback capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
15
−
pF
MDA520
12
MDA521
12
handbook, halfpage
handbook, halfpage
T.C.
(mV/K)
ID
(A)
8
8
4
4
0
−4
10−2
10−1
1
ID (A)
0
10
0
4
VDS = 10 V.
VDS = 10 V; Tj = 25 °C.
Fig.4
Fig.5
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values per section.
October 1992
4
8
12
VGS (V)
16
Drain current as a function of gate-source
voltage, typical values per section.
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF546
MDA522
0.8
MDA523
250
handbook, halfpage
handbook, halfpage
C
(pF)
RDSon
(Ω)
200
0.6
150
0.4
100
0.2
Cis
50
0
Cos
0
0
40
80
120
Tj (°C)
160
1
10
ID = 2.4 A; VGS = 10 V.
VGS = 0; f = 1 MHz.
Fig.6
Fig.7
Drain-source on-state resistance as a
function of junction temperature, typical
values per section.
MDA524
80
handbook, halfpage
Crs
(pF)
60
40
20
0
0
10
20
30
VDS (V)
40
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of
drain-source voltage, typical values per
section.
October 1992
5
20
30
VDS (V)
40
Input and output capacitance as functions
of drain-source voltage, typical values per
section.
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF546
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th = 25 °C; Rth mb-h = 0.25 K/W, unless otherwise specified.
RF performance in a common source, class-B, push-pull circuit.
MODE OF OPERATION
CW, class-B
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
500
28
2 × 80
80
> 11
typ. 13
> 50
typ. 60
Ruggedness in class-B operation
The BLF546 is capable of withstanding a full load
mismatch corresponding to VSWR = 10 through all phases
under the following conditions:
VDS = 28 V; f = 500 MHz at rated output power.
MDA525
25
Gp
(dB)
handbook, halfpage
20
100
ηC
(%)
MDA526
120
handbook, halfpage
PL
(W)
80
Gp
80
15
60
ηC
10
40
40
5
20
0
40
60
80
100
PL (W)
0
120
0
0
Class-B operation; VDS = 28 V; IDQ = 2 × 80 mA;
ZL = 2.3 + j2.7 Ω (per section); f = 500 MHz.
Fig.9
8
12
PIN (W)
16
Class-B operation; VDS = 28 V; IDQ = 2 × 80 mA;
ZL = 2.3 + j2.7 Ω (per section); f = 500 MHz.
Power gain and efficiency as functions of
load power, typical values.
October 1992
4
Fig.10 Load power as a function of input power,
typical values.
6
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF546
handbook, full pagewidth
C12
+VD
C13
R1
VBIAS
R2
R7
C8
C7
L20
C14
,,,,,,,, ,,,,,,,,
,,,,,,,, ,,,,,,,,
R3
L16
D.U.T.
L1
50 Ω
input
C1
L4
L6
L8
L10 L12
L14
L18
L24 C23
L22
L27
L2
C3
C4
C5
C6
C9
C18
C19 C20
C21
C22
C1
L3
L26
50 Ω
output
C24
L5
L7
L9
L11 L13
L15
L19
BLF546
L23
L25
L28
L17
R4
C15
C10
C11
R8
L21
MDA530
VBIAS
R5
C16
R6
C17
f = 500 MHz.
+VD
Fig.11 Test circuit for class-B operation.
List of components (class-B test circuit)
COMPONENT
DESCRIPTION
VALUE
C1, C2
multilayer ceramic chip capacitor
(note 1)
33 pF, 500 V
C3
multilayer ceramic chip capacitor
(note 1)
11 pF, 500 V
C4, C6, C21, C22
film dielectric trimmer
2 to 9 pF
C5
multilayer ceramic chip capacitor
(note 2)
12 pF, 500 V
C7, C10, C14, C15 multilayer ceramic chip capacitor
(note 1)
390 pF, 500 V
C8, C11, C12, C17 multilayer ceramic chip capacitor
100 nF, 50 V
C9
multilayer ceramic chip capacitor
(note 2)
39 pF, 500 V
C13, C16
electrolytic capacitor
4.7 µF, 63 V
C18, C19
multilayer ceramic chip capacitor
(note 2)
18 pF, 500 V
October 1992
7
DIMENSIONS
CATALOGUE NO.
2222 809 09005
2222 852 47104
2222 030 38478
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
COMPONENT
BLF546
DESCRIPTION
VALUE
DIMENSIONS
C20
multilayer ceramic chip capacitor
(note 2)
15 pF, 500 V
C23, C24
multilayer ceramic chip capacitor
(note 1)
15 pF, 500 V
L1, L3, L26, L28
stripline (note 3)
50 Ω
55.6 × 2.4 mm
L2
semi-rigid cable (note 4)
50 Ω
ext. dia. 2 mm
ext. conductor
length 55.6 mm
L4, L5
stripline (note 3)
42 Ω
12 × 3 mm
L6, L7
stripline (note 3)
42 Ω
26.5 × 3 mm
L8, L9
stripline (note 3)
42 Ω
5.5 × 3 mm
L10, L11
stripline (note 3)
42 Ω
6 × 3 mm
L12, L13
stripline (note 3)
42 Ω
3 × 3 mm
L14, L15
stripline (note 3)
42 Ω
7 × 3 mm
L16, L17
3 turns enamelled 1 mm copper
wire
15.6 nH
length 8.5 mm
int. dia. 5.4 mm
leads 2 × 5 mm
L18, L19
stripline (note 3)
42 Ω
12 × 3 mm
L20, L21
grade 3B Ferroxcube RF choke
L22, L23
stripline (note 3)
42 Ω
20 × 3 mm
L24, L25
stripline (note 3)
42 Ω
14 × 3 mm
L27
semi-rigid cable (note 5)
50 Ω
ext. dia. 2 mm
ext. conductor
length 55.6 mm
CATALOGUE NO.
4312 020 36642
R1, R5
0.4 W metal film resistor
11.5 kΩ
R2, R6
10 turns cermet potentiometer
50 kΩ
2322 151 71153
R3, R4
0.4 W metal film resistor
10 kΩ
2322 151 71003
R7, R8
1 W metal film resistor
10 Ω
2322 153 51009
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. American Technical Ceramics (ATC) capacitor, type 175B or other capacitor of the same quality.
3. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (εr = 2.2);
thickness 1⁄32 inch.
4. Semi-rigid cable L2 is soldered on to stripline L3.
5. Semi-rigid cable L27 is soldered on to stripline L28.
October 1992
8
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF546
200
handbook, full pagewidth
straps
85
straps
VD
C12
R2
C13
L20
L2
L3
C7 C8
C1
C2
L1
R3
L10
L12 L14
C6 C9 C18
L13 L15
L11
L9
R4
L8
L4
C3
L5
C4
L6
L7
C5
C10 C11
C15
L27
R7
C14
L28
L16
C20
L18
C19
L19
L17
C21
C23
L24
L22
L23
C22
L25
C24
R8
L26
L21
C16
R6
C17
MDA518
VD
The circuit and components are situated on one side of the printed circuit board, the other side being fully
metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets
for a direct contact between upper and lower sheets.
Dimensions in mm.
Fig.12 Component layout for 500 MHz test circuit.
October 1992
9
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF546
MDA527
2
Zi
handbook, halfpage
ri
(Ω)
0
(Ω)
8
xi
−2
6
−4
4
−6
2
−8
MDA528
10
ZL
handbook, halfpage
RL
XL
0
0
200
400
f (MHz)
600
0
200
400
f (MHz)
600
Class-B operation; VDS = 28 V; IDQ = 2 × 80 mA;
PL = 80 W.
Class-B operation; VDS = 28 V; IDQ = 2 × 80 mA;
PL = 80 W.
Fig.13 Input impedance as a function of frequency
(series components), typical values per
section.
Fig.14 Load impedance as a function of frequency
(series components), typical values per
section.
MDA529
30
handbook, halfpage
Gp
(dB)
20
10
0
0
200
400
f (MHz)
600
Class-B operation; VDS = 28 V; IDQ = 2 × 80 mA;
PL = 80 W.
Fig.15 Power gain as a function of frequency,
typical values per section.
October 1992
10
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF546
PACKAGE OUTLINE
Flanged double-ended ceramic package; 2 mounting holes; 4 leads
SOT268A
D
A
F
5
U1
B
q
C
w2 M C
H1
1
H
c
4
P
U2
E
w1 M A B
A
2
3
w3 M
b
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
E
e
F
H
H1
p
Q
q
U1
U2
w1
w2
w3
mm
4.91
4.19
1.66
1.39
0.13
0.07
12.96
12.44
6.48
6.22
6.45
2.04
1.77
17.02
16.00
8.23
7.72
3.43
3.17
2.67
2.41
18.42
24.90
24.63
6.61
6.35
0.51
1.02
0.26
inches
0.193
0.165
0.065 0.005
0.055 0.003
0.510
0.490
0.255
0.080 0.670
0.254
0.245
0.070 0.630
0.105
0.725
0.095
0.980
0.970
0.260
0.250
0.02
0.04
0.01
OUTLINE
VERSION
0.324 0.135
0.304 0.125
REFERENCES
IEC
JEDEC
EIAJ
SOT268A
October 1992
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
11
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF546
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
October 1992
12
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