DIODES FMMT493A

FMMT493A
SOT23 60V NPN SILICON PLANAR
MEDIUM POWER PLANAR TRANSISTOR
NPN: VCEO = 60V, IC = 1A, VCE(SAT) = 0.5V @1A
E
C
Description:
This 60V NPN transistor provides users with
performance combining low saturation and high hFE
with a continuous current capability of 1A, ensuring
improved circuit efficiencies.
B
SOT23
Features
Low saturation voltage
High hFE min 300 @ 250mA
IC = 1A
Applications
· Various driving functions including:- Motors
- Actuators
- Soleniod & Relays
· Backlight Inverters.
· DC_DC Modules.
E
Device
Reel Size
Tape Width
Quantity
(inches)
(mm)
Per Reel
FMMT493ATA
7
8mm embossed
3000 units
FMMT493ATC
13
8mm embossed
10000 units
C
B
TOP VIEW
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1
SEMICONDUCTORS
FMMT493A
ELECTRICAL CHARACTERISTICS (at Tamb = 25 C).
PARAMETER
SYMBOL
MIN.
Collector - Base
Breakdown Voltage
V (BR)CBO
Collector - Emitter
Breakdown Voltage
Emitter - Base
MAX.
UNIT
CONDITIONS.
120
V
I C = 100␮A
V CEO(SUS)
60
V
I C = 10mA*
V (BR)EBO
5
V
I E = 100␮A
Breakdown Voltage
Collector Cut-Off Current
I CBO
100
nA
V CB = 45V
Collector Cut-Off Current
I CES
100
nA
V CES = 45V
Emitter Cut-Off Current
I EBO
100
nA
V EB = 4V
Collector - Emitter
Saturation Voltage
V CE(SAT)
0.25
V
I C = 500mA, I B = 50mA
0.5
V
I C = 1A, I B = 100mA
Base - Emitter Saturation
Voltage
V BE(SAT)
1.15
V
I C =1A, I B = 100mA
Base Emitter Turn On
Voltage
V BE(ON)
1.0
V
I C = 1A, V CE - 10V
Static Forward Current
Transfer Ratio
h FE
I C = 1mA, V CE = 10V
300
500
I C = 150mA, V CE = 10V
1200
300
Transition Frequency
fT
I C = 250mA, V CE = 10V
100
I C = 500mA, V CE = 10V
20
I C = 1A, V CE = 10V
150
Mhz
I C = 50mA, V CE = 10V
f = 100MHz
Output Capacitance
C OBO
10
pF
V CB = 10V, f = 1MHz
*Measured under pulsed conditions. Pulse width = 300␮s. Duty Cycle <2%
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SEMICONDUCTORS
2
FMMT493A
ELECTRICAL CHARACTERICS
0.40
(V)
0.35
100m
IC/IB=50
0.30
100°C
0.25
IC/IB=100
0.20
V
CE(SAT)
VCE(SAT) (V)
Tamb=25°C
1
IC/IB=50
0.10
IC/IB=10
0m
25°C
0.15
-55°C
0.05
1m
10m
100m
1
1m
IC Collector Current (A)
10m
100m
1
IC Collector Current (A)
VCE(SAT) v IC
VCE(SAT) v IC
1400
1000
1.0
25°C
0.8
800
600
0.6
-55°C
0.4
400
200
0.2
0.0
1m
1.0
1200
0
10m
100m
V(BE SAT
(V)
)
100°C
Typical Gain (hFE)
Normalised Gain
1.2
VCE=10V
0.8
0.6
IC Collector Current (A)
-55°C
25°C
100°C
0.4
0.2
1m
1
IC/IB=50
10m
100m
1
IC Collector Current (A)
VBE(SAT) v IC
hFE v IC
1.0
VBE(ON) (V)
VCE=10V
0.8
-55°C
0.6
25°C
100°C
0.4
0.2
1m
10m
100m
1
IC Collector Current (A)
VBE(ON) v IC
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SEMICONDUCTORS
FMMT493A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V CBO
120
V
Collector-Emitter Voltage
V CEO
60
V
Emitter-Base Voltage
V EBO
5
V
Continuous Collector Current
IC
1
A
Peak Pulse Current
I CM
2
A
Base Current
IB
200
mA
Power Dissipation at T amb =25°C
P tot
500
mW
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)
R ␪JA
VALUE
250
UNIT
⬚C/W
Mounted on a 15mm x 15mm x 0.6mm alumina substrate connected using 25mm x 0.5 dia copper wire.
ISSUE 2 - AUGUST 2003
SEMICONDUCTORS
4
FMMT493A
THERMAL CHARACTERISTICS
1
DC
1s
100m
100ms
10ms
1ms
100µs
Single Pulse Tamb=25°C
10m
100m
1
10
100
VCE Collector-Emitter Voltage (V)
0.5
0.4
0.3
0.2
0.1
0.0
0
20
40
60
80
100
120
140
160
Temperature (°C)
Safe Operating Area
Thermal Resistance (°C/W)
Max Power Dissipation (W)
IC Collector Current (A)
0.6
Derating Curve
250
200
150
D=0.5
100
Single Pulse
D=0.2
D=0.05
50
D=0.1
0
100µ
1m
10m
100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
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5
SEMICONDUCTORS
FMMT493A
PAD LAYOUT DETAILS
N
PACKAGE DIMENSIONS
DIM Millimetres
Inches
Min
Max
Min
Max
A
2.67
3.05
0.105
0.120
B
1.20
1.40
0.047
0.055
C
–
1.10
–
0.043
D
0.37
0.53
0.0145
F
0.085
0.15
0.0033
G
NOM 1.9
K
0.01
0.10
0.0004
L
2.10
2.50
0.0825
N
NOM 0.95
0.021
0.0059
NOM 0.075
0.004
0.0985
NOM 0.037
© Zetex plc 2003
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[email protected]
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[email protected]
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Telephone: (852) 26100 611
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[email protected]
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This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or
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concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or
service.
For the latest product information, log on to
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SEMICONDUCTORS
6