ATMEL AT27C800-12PI 8-megabit 512k x 16 or 1024k x 8 uv erasable eprom Datasheet

AT27C800
Features
•
•
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Read Access Time - 100 ns
Word-wide or Byte-wide Configurable
8-Megabit Flash and Mask ROM Compatable
Low Power CMOS Operation
- 100 µA Maximum Standby
- 50 mA Maximum Active at 5 MHz
Wide Selection of JEDEC Standard Packages
- 42-Lead 600 mil Cerdip and PDIP
- 44-Lead SOIC (SOP)
- 48-Lead TSOP (12 mm x 20 mm)
5V ± 10% Power Supply
High Reliability CMOS Technology
- 2,000 ESD Protection
- 200 mA Latchup Immunity
RapidTM Programming Algorithm - 50 µs/word (typical)
CMOS and TTL Compatible Inputs and Outputs
Integrated Product Identification Code
Commercial and Industrial Temperature Ranges
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•
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8-Megabit
(512K x 16 or
1024K x 8)
UV Erasable
EPROM
Description
The AT27C800 is a low-power, high performance 8,388,608-bit UV erasable programmable read only memory (EPROM) organized as either 512K by 16 or 1024K by 8
bits. It requires a single 5V power supply in normal read mode operation. Any word
can be accessed in less than 100 ns, eliminating the need for speed-reducing WAIT
states. The x16 organization makes this part ideal for high-performance 16- and 32-bit
(continued)
microprocessor systems.
AT27C800
Preliminary
Pin Configurations
Pin Name
Function
A0 - A18
Addresses
O0 - O15
Outputs
O15/A-1
Output/Address
BYTE/VPP
Byte Mode/
Program Supply
CE
Chip Enable
OE
Output Enable
NC
No Connect
CDIP, PDIP Top View
TSOP
Type 1
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
NC
NC
NC
NC
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE/VPP
GND
O15/A-1
O7
O14
O6
O13
O5
O12
O4
VCC
O11
O3
O10
O2
O9
O1
O8
O0
OE
GND
CE
A0
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
GND
OE
O0
O8
O1
O9
O2
O10
O3
O11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
NC
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE/VPP
GND
O15/A-1
O7
O14
O6
O13
O5
O12
O4
VCC
SOIC (SOP)
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
GND
OE
O0
O8
O1
O9
O2
O10
O3
O11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
NC
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE/VPP
GND
O15/A-1
O7
O14
O6
O13
O5
O12
O4
VCC
0801A-A
1
The AT27C800 can be organized as either word-wide or
byte-wide. The organization is selected via the BYTE/VPP
pin. When BYTE/VPP is asserted high (VIH), the word-wide
organization is selected and the O15/A-1 pin is used for
O15 data output. When BYTE/VPP is asserted low (VIL),the
byte wide organization is selected and the O15/A-1 pin is
used for the address pin A-1. When the AT27C800 is logically regarded as x16 (word-wide), but read in the bytewide mode, then with A-1=VIL the lower eight bits of the 16
bit word are selected with A-1 =VIH the upper 8 bits of the
16-bit word are selected.
In read mode, the AT27C800 typically consumes 15 mA.
Standby mode supply current is typically less than 10 µA.
The AT27C800 is available in industry standard JEDECapproved one-time programmable (OTP)PDIP, SOIC
(SOP), and TSOP as well as UV erasable windowed Cerdip packages. The device features two-line control(CE,OE)
to eliminate bus contention in high-speed systems.
With high density 512K word or 1024K-bit storage capability, the AT27C800 allows firmware to be to be stored reliably and to be accessed by the system without the delays
of mass storage media.
Atmel’s AT27C800 has additional features that ensure high
quality and efficient production use. The RapidTM Programming Algorithm reduces the time required to program the
part and guarantees reliable programming. Programming
time is typically only 50µs/word. The Integrated Product
Identification Code electronically identifies the device and
manufacturer. This feature is used by industry standard
programming equipment to select the proper programming
equipment and voltages.
Block Diagram
2
AT27C800
Erasure Characteristics
The entire memory array of the AT27C800 is erased (all
outputs read as VOH) after exposure to ultraviolet light at a
wavelength of 2,537Å. Complete erasure is assured after a
minimum of 20 minutes of exposure using 12,000 µW/cm2
intensity lamps spaced one inch away from the chip. Minimum erase time for lamps at other intensity ratings can be
calculated from the minimum integrated erasure dose of 15
W.sec/cm2. To prevent unintentional erasure, an opaque
label is recommended to cover the clear window on any UV
erasable EPROM that will be subjected to continuous
flourescent indoor lighting or sunlight.
System Considerations
Switching between active and standby conditions via the
Chip Enable pin may produce transient voltage excursions.
Unless accommodated by the system design, these transients may exceed data sheet limits, resulting in device
non-conformance. At a minimum, a 0.1 µF high frequency,
low inherent inductance, ceramic capacitor should be utilized for each device. This capacitor should be connected
between the VCC and Ground terminals of the device, as
close to the device as possible. Additionally, to stabilize the
supply voltage level on printed circuit boards with large
EPROM arrays, a 4.7 µF bulk electrolytic capacitor should
be utilized, again connected between the VCC and Ground
terminals. This capacitor should be positioned as close as
possible to the point where the power supply is connected
to the array.
AT27C800
Absolute Maximum Ratings*
Temperature Under Bias ...................-55°C to +125°C
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
Note:
Minimum voltage is -0.6V DC which may undershoot to -2.0V for pulses of less than 20 ns. Maximum output pin voltage is Vcc + 0.75V DC which
may overshoot to + 7.0V for pulses of less than
20 ns.
Storage Temperature ........................-65°C to +150°C
Voltage on Any Pin with
with Respect to Ground.....................-2.0V to +7.0V(1)
Voltage on A9 with
Respect to Ground .........................-2.0V to +14.0V(1)
VPP Supply Voltage with
Respect to Ground ..........................-2.0V to +14.0V(1)
1.
Integrated UV Erase Dose............... 7258 W •sec/cm2
Operating Modes
Outputs
Mode\Pin
CE
OE
BYTE/VPP
O0-O7
O8-O14
O15/A-1
(1)
VIH
DOUT
DOUT
DOUT
Ai
Read Word-wide
VIL
VIL
X
Read Byte-wide Upper
VIL
VIL
X(1)
VIL
DOUT
High Z
VIH
(1)
VIL
DOUT
High Z
VIL
Read Byte-wide Lower
VIL
VIL
X
Output Disable
X(1)
VIH
X(1)
Standby
VIH
X
(1)
(1)
Rapid Program(2)
VIL
VIH
Ai
VPP
DIN
PGM Verify
X
VIL
Ai
VPP
DOUT
PGM Inhibit
VIH
VIH
X(1)
VPP
High Z
VIH
Identification Code
Product Identification
Notes:
(4)
VIL
VIL
X
X
High Z
(5)
X
(3)
A9 = VH
A0 = VIH or VIL
A1 - A18 = VIL
High Z
1. X can be VIL or VIH.
2. Refer to the programming characteristics tables in this data sheet.
3. VH = 12.0 ± 0.5V.
4. Two identifier words may be selected. All Ai inputs are held low (VIL) except A9,which is set to VH , and A0, which is toggled
low (VIL) to select the Manufacturer’s Identification word and high (VIH) to select the Device Code word.
5. Standby VCC current (ISB) is specified with VPP = VCC . VCC > VPP will cause a slight increase in ISB .
3
DC and AC Operating Conditions for Read Operation
AT27C800
Operating Temperature (Case)
Com.
Ind.
-10
-12
-15
0°C - 70°C
0°C - 70°C
0°C - 70°C
-40°C - 85°C
-40°C - 85°C
-40°C - 85°C
5V ± 10%
5V ± 10%
5V ± 10%
VCC Power Supply
DC and Operating Characteristics for Read Operation
Symbol
Parameter
Condition
ILI
Input Load Current
ILO
Output Leakage Current
IPP1(2)
VPP
(1)
Read/Standby Current
VCC(1) Standby Current
ISB
VCC Active Current
Min
Max
Units
VIN = 0V to VCC
±1.0
µA
VOUT = 0V to VCC
±5.0
µA
VPP= VCC
±10
µA
100
µA
1.0
mA
50
mA
ISB1 (CMOS)
CE = VCC ± 0.3V
ISB2 (TTL)
CE = 2.0 to VCC + 0.5V
f = 5MHz, IOUT = 0 mA,
CE = VIL
VIL
Input Low Voltage
-0.6
0.8
V
VIH
Input High Voltage
2.0
VCC + 0.5
V
VOL
Output Low Voltage
IOL= 2.1 mA
0.4
V
VOH
Output High Voltage
IOH = -400 mA
Notes:
2.4
V
1. VCC must be applied simultaneously or before VPP, and removed simultaneously or after VPP.
2. VPP may be connected directly to VCC except during programming. The supply current would then be the sum of ICC and IPP.
AC Characteristics for Read Operation
AT27C800
-10
Symbol
tACC
(3)
tCE(2)
tOE
(2,3)
Parameter
Condition
Max
Address to Output Delay
CE = OE = VIL
100
CE to Output Delay
OE = VIL
OE to Output Delay
CE = VIL
Min
-15
Max
Min
Max
Units
120
150
ns
100
120
150
ns
40
40
50
ns
30
35
40
ns
tDF(4,5)
OE or CE High to Output Float,
whichever occured first
tOH(4)
Output Hold from Address CE or OE,
whichever occured first
tST
BYTE High to Output Valid
100
120
150
ns
tSTD
BYTE Low to Output Transition
40
50
60
ns
Notes:
4
Min
-12
2,3,4,5. See the AC Waveforms for Read Operation diagram.
AT27C800
5.0
5.0
5.0
ns
AT27C800
Byte-Wide Read Mode AC Waveforms(1)
Note:
1.
BYTE/VPP = VIL
Byte-Wide Read Mode AC Waveforms(1)
Note:
1.
BYTE/VPP = VIH
BYTE Transition AC Waveforms
A0 - A18
VALID
A-1
VALID
tOH
tACC
BYTE/VPP
tST
O 0 - O7
DATA OUT
tOH
O8 - O15
DATA OUT
HI-Z
DATA OUT
tSTD
Notes:
1.
Timing measurement references are 0.8V and 2.0V. Input AC drive levels are 0.45V and 2.4V, unless otherwise specified.
2.
OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE.
3.
OE may be delayed up to tACC - tOE after the address is valid without impact on tACC.
4.
This parameter is only sampled and is not 100% tested.
5.
Output float is defined as the point when data is no longer driven.
5
Input Test Waveforms and Measurement Levels
Output Test Load
tR, tF < 20 ns (10% to 90%)
Note:
1.
CL = 100 pF including
jig capacitance.
Pin Capaticance (f = 1 MHz, T = 25°V)(1)
Typ
Max
Units
Conditions
CIN
4
10
pF
VIN = 0V
COUT
8
12
pF
VOUT = 0V
Note:
6
1. Typical values for nominal supply voltage. This parameter is only sampled and is not 100% tested.
AT27C800
AT27C800
Programming Waveforms(1)
Notes:
1.
The Input Timing reference is 0.8V for VIL and 2.0V for VIH.
2.
tOE and tDFP are characteristics of the device but must be accommodated by the programmer.
3.
When programming the AT27C800, a 0.1 µF capacitor is required across VPP and ground to suppress voltage transients.
DC Programming Characteristics
TA = 25 ± 5°C, VCC = 6.5 ± 0.25V, VPP = 13.0 ± 0.25V
Limits
Symbol
Parameter
Test Conditions
ILI
Input Load Current
VIN = VIL, VIH
VIL
Input Low Level
VIH
Input High Level
VOL
Output Low Voltage
IOL = 2.1 mA
VOH
Output High Voltage
IOH = -400 µA
ICC2
VCC Supply Current (Program and Verify)
IPP2
VPP Supply Current
VID
A9 Product Identification Voltage
Min
Max
Units
±10
µA
-0.6
0.8
V
2.0
VCC + 0.5
V
0.4
V
2.4
CE = VIL
11.5
V
50
mA
30
mA
12.5
V
7
AC Programming Characteristics
TA = 25 ± 5°C, VCC = 6.5 ± 0.25V, VPP = 13.0 ± 0.25V
Limits
Test Conditions(1)
Symbol
Parameter
tAS
Address Setup Time
tOES
OE Setup Time
tDS
Data Setup Time
tAH
Address Hold Time
tDH
Data Hold Time
tDFP
OE High to Output Float Delay(2)
tVPS
VPP Setup Time
tVCS
VCC Setup Time
Input Rise and Fall Times:
(10% to 90%) 20 ns.
Input Pulse Levels:
45V to 2.4V
Input Pulse Levels:
Input Timing Reference Level:
0.8V to 2.0V
(3)
CE Program Pulse Width
tOE
Data Valid from OE
tPRT
BYTE /VPP Pulse Rise Time During
Programming
Max
Output Timing Reference Level:
0.8V to 2.0V
Units
2
µs
2
µs
2
µs
0
µs
2
µs
0
0.8V to 2.0V
tPW
Notes:
Min
130
ns
2
µs
2
µs
47.5
50
52.5
µs
150
ns
ns
1.
Vcc must be applied simultaneously or before VPP and removed simultaneously or after VPP.
2.
This parameter is only sampled and is not 100% tested. Output Float is defined as the point where data is no longer
driven— see timing diagram.
3.
Program Pulse width tolerance is 50 µs ± 5%.
Atmel’s 27C800 Integrated Product Identification Code
Pins
A0
Codes
8
015
014
013
012
011
010
09
08
07
06
05
04
03
02
01
00
Hex Data
Manufacturer
0
0
0
0
1
1
1
1
0
1E1E
Device Type
1
1
1
1
1
1
0
0
0
F8F8
AT27C800
AT27C800
Rapid Programming Algorithm
A 50 µs CE pulse width is used to program. The address is
set to the first location. VCC is raised to 6.5V and BYTE/VPP
is raised to 13.0V. Each address is first programmed with
one 50 µs CE pulse without verification. Then a verification/
reprogramming loop is executed for each address. In the
event a word fails to pass verification, up to 10 successive
50 µs pulses are applied with a verification after each
pulse. If the word fails to verify after 10 pulses have been
applied, the part is considered failed. After the word verifies
properly, the next address is selected until all have been
checked. VPP is then lowered to 5.0V and VCC to 5.0V. All
words are read again and compared with the original data
to determine if the device passes or fails.
9
Ordering Information
tACC
(ns)
100
120
150
ICC (mA)
Active
Standby
Ordering Code
Package
50
0.1
AT27C800-10DC
AT27C800-10PC
AT27C800-10RC
AT27C800-10TC
42DW6
42P6
44R
48T
Commercial
(0°C to 70°C)
50
0.1
AT27C800-10DI
AT27C800-10PI
AT27C800-10RI
AT27C800-10TI
42DW6
42P6
44R
48T
Industrial
(-40°C to 85°C)
50
0.1
AT27C800-12DC
AT27C800-12PC
AT27C800-12RC
AT27C800-12TC
42DW6
42P6
44R
48T
Commercial
(0°C to 70°C)
50
0.1
AT27C800-12DI
AT27C800-12PI
AT27C800-12RI
AT27C800-12TI
42DW6
42P6
44R
48T
Industrial
(-40°C to 85°C)
50
0.1
AT27C800-15DC
AT27C800-15PC
AT27C800-15RC
AT27C800-15TC
42DW6
42P6
44R
48T
Commercial
(0°C to 70°C)
50
0.1
AT27C800-15DI
AT27C800-15PI
AT27C800-15RI
AT27C800-15TI
42DW6
42P6
44R
48T
Industrial
(-40°C to 85°C)
Package Type
42DW6
42 Lead, 0.600" Wide, Ceramic Dual Inline Package (CDIP)
42P6
42 Lead, 0.600" Wide, Plastic Dual Inline Package (PDIP)
44R
44 Lead, 0.525" Wide, Plastic Gull Wing Small Outline Package (SOIC/SOP)
48T
48 Lead, Plastic Thin Small Outline Package (TSOP) 12 x 20 mm
10
AT27C800
Operation Range
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