MMBT4401T NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • A Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT4403T) Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) • • • • • • • B C TOP VIEW Mechanical Data • • SOT-523 C E B Case: SOT-523 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: 2X, See Page 4 Ordering & Date Code Information: See Page 4 Weight: 0.002 grams (approximate) G H K N J M L D C E B Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D ⎯ ⎯ 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 α 0° 8° ⎯ All Dimensions in mm Maximum Ratings @TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V IC 600 mA Collector Current – Continuous (Note 1) Power Dissipation (Note 1) Pd 150 mW Thermal Resistance, Junction to Ambient (Note 1) RθJA 833 °C/W Tj, TSTG -55 to +150 °C Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30272 Rev. 8 - 2 1 of 4 www.diodes.com MMBT4401T © Diodes Incorporated Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Symbol Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO 60 ⎯ V IC = 100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 ⎯ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ⎯ V IE = 100μA, IC = 0 ICEX ⎯ 100 nA VCE = 35V, VEB(OFF) = 0.4V IBL ⎯ 100 nA VCE = 35V, VEB(OFF) = 0.4V hFE 20 40 80 100 40 ⎯ ⎯ ⎯ 300 ⎯ ⎯ IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 150mA, VCE = 1.0V IC = 500mA, VCE = 2.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.40 0.75 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage VBE(SAT) 0.75 ⎯ 0.95 1.2 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Output Capacitance Cobo ⎯ 6.5 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ⎯ 30 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 15 kΩ Voltage Feedback Ratio hre 0.1 8.0 x 10 Small Signal Current Gain hfe 40 500 ⎯ Output Admittance hoe 1.0 30 μS fT 250 ⎯ MHz Delay Time td ⎯ 15 ns Rise Time tr ⎯ 20 ns Storage Time ts ⎯ 225 ns Fall Time tf ⎯ 30 ns Collector Cutoff Current Base Cutoff Current Test Condition ON CHARACTERISTICS (Note 5) DC Current Gain SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product -4 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 20mA, f = 100MHz SWITCHING CHARACTERISTICS Notes: VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 5. Short duration pulse test used to minimize self-heating effect. 1,000 250 200 hFE, DC CURRENT GAIN Pd, POWER DISSIPATION (mW) VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA 150 100 TA = 125°C 100 TA = -25°C TA = 25°C 10 50 VCE = 1.0V 0 0 DS30272 Rev. 8 - 2 40 80 120 160 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve 1 0.1 200 2 of 4 www.diodes.com 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current 1,000 MMBT4401T © Diodes Incorporated 2.0 VCE, COLLECTOR-EMITTER VOLTAGE (V) 100 CAPACITANCE (pF) 30 20 10 5.0 1.0 0.1 1.0 10 VR, REVERSE VOLTAGE (V) Fig. 3 Typical Capacitance 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.1 10 100 1 IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region 0.01 1.0 IC IB = 10 VBE(ON), BASE-EMITTER VOLTAGE (V) VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1.6 50 0.5 0.4 TA = 25°C 0.3 T A = 150°C 0.2 0.1 TA = -50°C 0 1.8 0.9 VCE = 5V 0.8 0.7 0.6 TA = -50°C TA = 25°C 0.5 0.4 0.3 T A = 150°C 0.2 0.1 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Collector Emitter Saturation Voltage vs. Collector Current 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Voltage vs. Collector Current fT, GAIN-BANDWIDTH PRODUCT (MHz) 1,000 100 10 1 1 100 10 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current DS30272 Rev. 8 - 2 3 of 4 www.diodes.com MMBT4401T © Diodes Incorporated Ordering Information (Note 6) Packaging SOT-523 Device MMBT4401T-7-F Notes: Shipping 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 2X = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) 2XYM Date Code Key Year 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 Code N P R S T U V W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30272 Rev. 8 - 2 4 of 4 www.diodes.com MMBT4401T © Diodes Incorporated