DIODES DMG9926USD

DMG9926USD
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
NEW PRODUCT
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Mechanical Data
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Dual N-Channel MOSFET
Low On-Resistance
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24mΩ @ VGS = 4.5V
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29mΩ @ VGS = 2.5V
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37mΩ @ VGS = 1.8V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
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Case: SOP-8L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.072g (approximate)
D1
SOP-8L
TOP VIEW
S1
D1
G1
D1
S2
D2
G2
D2
TOP VIEW
Internal Schematic
G1
D2
G2
S1
S2
N-Channel MOSFET
N-Channel MOSFET
Symbol
VDSS
VGSS
Units
V
V
IDM
Value
20
±8
8
6.7
30
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Symbol
PD
RθJA
Value
1.3
96
Unit
W
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Steady
State
TA = 25°C
TA = 70°C
ID
Pulsed Drain Current (Note 3)
A
A
Thermal Characteristics
Notes:
1.
2.
3.
4.
Device mounted on FR-4 PCB with minimum recommended pad layout.
No purposefully added lead.
Repetitive rating, pulse width limited by function temperature.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMG9926USD
Document number: DS31757 Rev. 4 - 2
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DMG9926USD
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
⎯
⎯
⎯
⎯
⎯
⎯
1
±100
V
μA
nA
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS(th)
0.5
⎯
0.9
V
24
29
37
mΩ
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 8.2A
VGS = 2.5V, ID = 3.3A
VGS = 1.8V, ID = 2.0A
VDS = 10V, ID = 4A
VGS = 0V, IS = 1A
Static Drain-Source On-Resistance
RDS (ON)
⎯
19
23
29
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
VSD
⎯
0.5
7
⎯
⎯
0.9
S
V
Ciss
Coss
Crss
RG
⎯
⎯
⎯
⎯
867
85
81
1.29
⎯
⎯
⎯
⎯
pF
pF
pF
Ω
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
⎯
⎯
⎯
⎯
⎯
⎯
⎯
8.8
1.2
3.0
13.2
12.6
64.8
21.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
nC
nC
nC
ns
ns
ns
ns
Notes:
Test Condition
VDS = 15V, VGS = 0V
f = 1.0MHz
VGS = 0V, VDS = 0V, f = 1.0MHz
VGS = 4.5V, VDS = 10V, ID = 8.2A
VDD = 10V, VGS = 4.5V,
RL = 10Ω, RG = 6Ω
5. Short duration pulse test used to minimize self-heating effect.
30
VGS = 8.0V
20
VGS = 2.5V
VGS = 4.5V
25
VGS = 3.0V
ID, DRAIN CURRENT (A)
VGS = 2.0V
15
ID, DRAIN CURRENT (A)
NEW PRODUCT
Electrical Characteristics
20
VDS = 5V
10
15
10
VGS = 1.5V
TA = 150°C
5
TA = 125°C
T A = 85°C
5
TA = 25°C
TA = -55°C
VGS = 1.2V
0
0
0.4
0.8
1.2
1.6
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DMG9926USD
Document number: DS31757 Rev. 4 - 2
2.0
0
0.5
1
1.5
2
VGS, GATE SOURCE VOLTAGE (V)
2.5
Fig. 2 Typical Transfer Characteristics
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0.05
VGS = 1.8V
0.04
0.03
VGS = 2.5V
0.02
VGS = 4.5V
0.01
0
5
10
15
20
25
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
0.04
1.6
1.4
VGS = 2.5V
ID = 5A
VGS = 4.5V
ID = 8.2A
1.0
0.8
0.6
-50
TA = 150°C
0.03
TA = 125°C
TA = 85°C
0.02
TA = 25°C
TA = -55°C
0.01
0
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
VGS = 4.5V
30
1.8
1.2
0.05
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.06
0
4
8
12
16
ID, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
20
0.05
0.04
VGS = 2.5V
ID = 5A
0.03
VGS = 4.5V
ID = 8.2A
0.02
0.01
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
1.2
10
1.0
0.8
0.6
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
NEW PRODUCT
DMG9926USD
ID = 1mA
ID = 250µA
0.4
TA = 25°C
1
0.1
0.2
0.01
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
DMG9926USD
Document number: DS31757 Rev. 4 - 2
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0.4
0.5
0.6
0.7
0.8
0.9
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1
June 2009
© Diodes Incorporated
DMG9926USD
IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA)
10,000
C, CAPACITANCE (pF)
1,000
C iss
Coss
100
Crss
10
0
5
10
15
T A = 150°C
1,000
T A = 125°C
100
T A = 85°C
10
T A = 25°C
T A = -55°C
1
0.1
0
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
2
4
6
8 10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
f = 1MHz
10,000
D = 0.7
D = 0.5
D = 0.1
0.1
D = 0.05
D = 0.9
D = 0.02
RθJA(t) = r(t) * RθJA
RθJA = 99°C/W
D = 0.01
0.01
P(pk)
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
t1
t2
T J - T A = P * RθJA(t)
Duty Cycle, D = t1/t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
10
100
1,000
Fig. 11 Transient Thermal Response
Ordering Information
(Note 6)
Part Number
DMG9926USD-13
Notes:
Case
SOP-8L
Packaging
2500/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
8
5
Logo
N9926UD
Part no.
YY WW
Xth week: 01~52
Year: “09” = 2009
1
4
( Top View )
DMG9926USD
Document number: DS31757 Rev. 4 - 2
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DMG9926USD
0.254
Package Outline Dimensions
NEW PRODUCT
E1 E
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
7°~9°
h
45°
Detail ‘A’
A2 A A3
b
e
D
SOP-8L
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82
0°
8°
θ
All Dimensions in mm
Suggested Pad Layout
X
C1
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
C2
Y
DMG9926USD
Document number: DS31757 Rev. 4 - 2
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IMPORTANT NOTICE
NEW PRODUCT
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
DMG9926USD
Document number: DS31757 Rev. 4 - 2
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June 2009
© Diodes Incorporated