DMP3010LPS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits RDS(ON) ID TA = 25°C (Note 5) 7.5mΩ @ VGS = -10V -36A 10mΩ @ VGS = -4.5V -31A • • • • • • • • • • 30V Description and Applications This new generation 30V P-Channel Enhancement Mode MOSFET has been designed to minimize RDS(on) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Loadswitch. • • • Thermally Efficient Package-Cooler Running Applications High Conversion Efficiency Low RDS(on) – Minimizes On State Losses Low Input Capacitance Fast Switching Speed <1.1mm Package Profile – Ideal for Thin Applications ESD HBM Protected up to 1kV Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • Notebook Battery Power Management DC-DC Converters Loadswitch • • • Case: PowerDI5060-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.097 grams (approximate) Drain Pin 1 S S D S D S D G D S S G Gate D D Source D D Top View Internal Schematic Bottom View Top View Pin Configuration Ordering Information (Note 3) Part Number DMP3010LPS-13 Notes: Case PowerDI5060-8 Packaging 2500 / Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information D D D D Logo P3010LS Part no. YY WW Xth week: 01 ~ 53 Year: “09” = 2009 S DMP3010LPS Document number: DS32239 Rev. 3 - 2 S S G 1 of 6 www.diodes.com December 2010 © Diodes Incorporated DMP3010LPS Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V Steady State Continuous Drain Current (Note 5) VGS = 4.5V Steady State Continuous Drain Current (Note 4) VGS = 10V Steady State TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C ID Value -30 ±20 -36 -29 ID -31 -25 Unit V V A A IDM IAR EAR -14.5 -11.5 -100 -17.5 153 A A mJ Symbol PD RθJA PD RθJA PD RθJC TJ, TSTG Value 2.18 55 14.37 8.7 58.7 2.13 -55 to +150 Unit W °C/W W °C/W W °C/W °C ID Pulsed Drain Current (Notes 4 & 7) Avalanche Current (Notes 8 & 9) Repetitive Avalanche Energy (Notes 8 & 9) L = 1mH A Thermal Characteristics Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) Power Dissipation (Notes 5 & 6) Thermal Resistance, Junction to Case @TC = 25°C (Notes 5 & 6) Operating and Storage Temperature Range Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 - - -1.0 ±100 V μA nA VGS = 0V, ID = -250μA VDS = -30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) -1.6 5.7 7.2 30 -0.65 -2.1 7.5 10 -1.0 V Static Drain-Source On-Resistance -1.1 - VDS = VGS, ID = -250μA VGS = -10V, ID = -10A VGS = -4.5V, ID = -10A VDS = -15V, ID = -10A VGS = 0V, IS = -1A - 6234 1500 774 1.28 126.2 59.2 16.1 15.7 11.4 9.4 260.7 99.3 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -10V) Total Gate Charge (VGS = -4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: |Yfs| VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -15V, ID = -10A VDS = -15V, VGS = -4.5V, ID = -10A VDS = -15V, VGEN = -10V, RG = 6Ω, ID = -1A 4. Device mounted on FR-4 PCB with 1 inch square 2 oz. Copper, single sided. 5. Device mounted on FR-4 PCB with infinite heatsink. 6. RθJC is guaranteed by design while RθCA is determined by the user’s board design. 7. Repetitive rating, pulse width limited by junction temperature, 10μs pulse, duty cycle = 1%. 8. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to production testing. DMP3010LPS Document number: DS32239 Rev. 3 - 2 2 of 6 www.diodes.com December 2010 © Diodes Incorporated DMP3010LPS 30 30 VGS = -10V 25 VGS = -5.0V 20 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 25 VGS = -4.5V VGS = -3.5V VGS = -3.0V VGS = -2.5V 15 10 5 VDS = -5V 20 15 10 TA = 150°C TA = 125°C 5 VGS = -2.0V 0.5 1 1.5 2 2.5 3 3.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 4 0.020 0.016 0.012 0.008 VGS = -4.5V VGS = -10V 0.004 0 0 5 10 15 20 25 -ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 30 1.6 1.4 1.2 1.0 0.5 1 1.5 2 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3 0.016 0.014 VGS = -4.5V 0.012 TA = 150°C 0.010 TA = 125°C 0.008 TA = 85°C TA = 25°C 0.006 TA = -55°C 0.004 0.002 0 0 5 10 15 20 25 -ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.020 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) TA = -55°C 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 TA = 85°C T A = 25°C VGS = -10V ID = -20A 0.8 VGS = -4.5V ID = -10A 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMP3010LPS Document number: DS32239 Rev. 3 - 2 3 of 6 www.diodes.com 0.016 0.012 VGS = -4.5V ID = -10A 0.008 0.004 VGS = -10V ID = -20A 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature December 2010 © Diodes Incorporated DMP3010LPS 30 25 2.0 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) 2.5 ID = -1mA 1.5 ID = -250µA 1.0 0.5 T A = 25°C 15 10 5 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.4 100,000 10,000 Ciss -IDSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) 20 Coss 1,000 Crss 10,000 T A = 150°C 1,000 T A = 125°C 100 TA = 85°C 10 f = 1MHz TA = 25°C 1 100 0 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 20 0 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) 30 Fig. 10 Typical Leakage Current vs. Drain-Source Voltage -VGS, GATE-SOURCE VOLTAGE (V) 10 VDS = -15V ID = -10A 8 6 4 2 0 0 20 40 60 80 100 120 140 Qg , TOTAL GATE CHARGE (nC) Fig. 11 Gate-Source Voltage vs. Total Gate Charge DMP3010LPS Document number: DS32239 Rev. 3 - 2 4 of 6 www.diodes.com December 2010 © Diodes Incorporated DMP3010LPS D = 0.7 D = 0.5 D = 0.3 D = 0.1 D = 0.9 RθJA(t) = r(t) * RθJA RθJA = 97°C/W D = 0.05 D = 0.02 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 DUT mounted on FR-4 PCB with minimum recommended pad layout D = Single Pulse 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 100 1,000 Package Outline Dimensions D D1 DETAIL A θ (4x) A1 c E e E1 θ1 (4x) b (8x) L D2 b2 (4x) DETAIL A E2 M A M1 G L1 PowerDI5060-8L Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 b 0.33 0.51 0.41 b2 0.200 0.350 0.273 c 0.230 0.330 0.277 D 5.15BSC D1 4.70 5.10 4.90 D2 3.50 4.40 3.90 E 6.15BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 e 1.27BSC G 0.51 0.71 0.61 L 0.51 0.71 0.61 L1 0.050 0.20 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 θ 10° 12° 11° θ1 6° 8° 7° All Dimensions in mm Suggested Pad Layout X Y2 X1 Y1 Y G1 C Y3 (4x) X2 (8x) DMP3010LPS Document number: DS32239 Rev. 3 - 2 G Dimensions C G G1 X X1 X2 Y Y1 Y2 Y3 5 of 6 www.diodes.com Value (in mm) 1.270 0.660 0.820 4.420 4.100 0.610 6.610 3.810 1.020 1.270 December 2010 © Diodes Incorporated DMP3010LPS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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