APTM10TDUM19PG Triple dual common source MOSFET Power Module D5 G5 S3 S1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 D4 D1 D6 D3 G1 S1/S2 D2 S1 Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration G3 S3/S4 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very low (12mm) profile • Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability • RoHS Compliant D5 S3 G5 S5/S6 S5 S2 S4 S6 G2 G4 G6 D4 D6 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 100 70 50 300 ±30 21 208 75 30 1500 Unit V A V mΩ W A July, 2006 G3 G1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM10TDUM19PG – Rev 1 D3 D1 VDSS = 100V RDSon = 19mΩ typ @ Tj = 25°C ID = 70A @ Tc = 25°C APTM10TDUM19PG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Min VGS = 10V, ID = 35A VGS = VDS, ID = 1mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VSD dv/dt trr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery X Reverse Recovery Time Qrr Reverse Recovery Charge IS 19 2 Min VGS = 10V VBus = 100V ID = 70A Typ 5100 1900 800 200 Unit Max Unit µA mΩ V nA pF nC 92 35 Inductive switching @ 125°C VGS = 15V VBus = 66V ID = 70A R G = 5Ω 70 Test Conditions ns 95 125 Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 70A, R G = 5Ω Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 70A, R G = 5Ω 276 µJ 302 304 µJ 320 Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 139A IS = - 70A VR = 66V diS/dt = 100A/µs Max 250 1000 21 4 ±100 40 Source - Drain diode ratings and characteristics Symbol Typ Tj = 25°C Tj = 125°C Max 70 50 1.3 5 Unit A Tj = 25°C 200 V V/ns ns Tj = 25°C 1.4 µC www.microsemi.com July, 2006 X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 70A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C 2–7 APTM10TDUM19PG – Rev 1 Symbol APTM10TDUM19PG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 3 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M6 Typ Max 0.6 150 125 100 5 250 Unit °C/W V °C N.m g SP6-P Package outline (dimensions in mm) 5 places (3:1) www.microsemi.com 3–7 APTM10TDUM19PG – Rev 1 July, 2006 See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTM10TDUM19PG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.7 0.6 0.9 0.5 0.7 0.4 0.5 0.3 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 125 VGS=15V, 10V & 9V 250 200 I D, Drain Current (A) 8V 150 7V 100 6V 50 0 V DS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 100 75 T J=-55°C 50 T J=25°C 25 T J=125°C T J=-55°C 0 0 4 8 12 16 20 24 28 0 VDS, Drain to Source Voltage (V) 8 70 1.6 Normalized to V GS=10V @ 35A 1.4 VGS=10V 1.2 VGS=20V 1 1 2 3 4 5 6 7 VGS , Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current ID, DC Drain Current (A) 0.8 60 50 40 30 20 10 0 0 50 100 150 200 250 ID, Drain Current (A) 25 50 75 100 125 150 July, 2006 RDS(on) Drain to Source ON Resistance T J=125°C TC, Case Temperature (°C) www.microsemi.com 4–7 APTM10TDUM19PG – Rev 1 ID, Drain Current (A) 300 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) VGS=10V ID= 35A 2.0 1.5 1.0 0.5 0.0 -50 -25 25 50 75 100 125 150 Maximum Safe Operating Area 1.1 1.0 0.9 0.8 0.7 0.6 1ms limited by RDSon 100 10ms 10 Single pulse TJ=150°C TC=25°C 100ms 1 0 25 50 75 100 125 150 1 TC, Case Temperature (°C) 10000 VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 Ciss Coss 1000 Crss 100 0 10 100 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=70A T J=25°C 14 VDS=20V 12 VDS=50V 10 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com V DS =80V 8 6 4 2 0 0 40 80 120 160 200 240 280 Gate Charge (nC) July, 2006 -50 -25 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 1000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) Threshold Voltage vs Temperature 1.2 ON resistance vs Temperature 2.5 5–7 APTM10TDUM19PG – Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM10TDUM19PG APTM10TDUM19PG Delay Times vs Current Rise and Fall times vs Current 160 120 t d(off) 80 VDS=66V RG=5Ω T J=125°C L=100µH 60 40 td(on) 120 100 80 tr 60 20 0 0 0 20 40 60 80 100 I D, Drain Current (A) 120 0 20 40 60 80 100 ID, Drain Current (A) 120 Switching Energy vs Gate Resistance Switching Energy vs Current 1.5 V DS =66V RG =5Ω T J=125°C L=100µH 0.5 Switching Energy (mJ) 0.75 Eoff Eon 0.25 Eon 0 VDS=66V ID=70A TJ=125°C L=100µH 1 Eoff 0.5 Eon 0 40 60 80 100 120 0 10 I D, Drain Current (A) Operating Frequency vs Drain Current 200 150 100 VDS=66V D=50% RG=5Ω TJ=125°C TC=75°C ZVS Hard switching 50 IDR, Reverse Drain Current (A) ZCS 0 13 25 38 50 30 40 50 60 Source to Drain Diode Forward Voltage 300 250 20 Gate Resistance (Ohms) 63 1000 TJ=150°C 100 TJ=25°C 10 1 75 I D, Drain Current (A) 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) July, 2006 20 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–7 APTM10TDUM19PG – Rev 1 0 Frequency (kHz) tf 40 20 Eon and Eoff (mJ) V DS=66V R G=5Ω T J=125°C L=100µH 140 t r and tf (ns) t d(on) and td(off) (ns) 100 www.microsemi.com 7–7 APTM10TDUM19PG – Rev 1 July, 2006 APTM10TDUM19PG