Zetex FMMT591 Pnp silicon planar medium power transistor Datasheet

SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
FMMT591
TYPICAL CHARACTERISTICS
0.6
0.6
+25 ° C
0.5
0.5
0.4
0.4
0.3
0.2
0
1mA
10mA
100mA
1A
10A
COMPLEMENTARY TYPE- FMMT491
PARTMARKING DETAIL - 591
PARAMETER
SYMBOL
VALUE
UNIT
0.1
Collector-Base Voltage
VCBO
-80
V
0
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-2
A
10mA
1mA
100mA
1A
10A
IC-Collector Current
IC-Collector Current
VCE(sat) v IC
400
VCE(sat) v IC
VCE=5V
IC/IB=10
1.0
300
+100 °C
200
+25 °C
0.8
0.2
1.2
10mA
100mA
1A
10A
0
1mA
10mA
100mA
1A
IC-Collector Current
IC-Collector Current
hFE V IC
VBE(sat) v IC
10A
10
VCE=5V
1.0
1
0.8
0.6
-55 °C
+25 °C
+100 °C
0.4
0.1
0.2
0
1mA
10mA
100mA
1A
10A
0.01
0.1V
IC
-1
A
Base Current
IB
-200
mA
500
mW
-55 to +150
°C
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
PARAMETER
-55 °C
+25 °C
+100 °C
-55 °C
0
1mA
Continuous Collector Current
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
0.6
0.4
100
B
ABSOLUTE MAXIMUM RATINGS.
-55 °C
+25 °C
+100 °C
0.2
0.1
DC
1s
100ms
10ms
1ms
100us
1V
10V
IC-Collector Current
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
100V
SYMBOL MIN.
MAX.
UNIT CONDITIONS.
Collector-Base Breakdown Voltage V(BR)CBO
-80
V
IC=-100µ A, IE=0
Collector-Emitter Breakdown
Voltage
V(BR)CEO
-60
V
IC=-10mA, IB=0*
-5
Emitter-Base Breakdown Voltage
V(BR)EBO
V
IE=-100µ A, IC=0
Collector Cut-Off Current
ICBO
-100
nA
VCB=-60V
Emitter Cut-Off Current
IEBO
-100
nA
VEB=-4V, IC=0
Collector-Emitter Cut-Off Current
ICES
-100
nA
VCES=-60V
Collector-Emitter Saturation
Voltage
VCE(sat)
-0.3
-0.6
V
V
IC=-500mA,IB=-50mA*
IC=-1A, IB=-100mA*
Base-Emitter Saturation Voltage
VBE(sat)
-1.2
V
IC=-1A, IB=-100mA*
Base-Emitter Turn-on Voltage
VBE(on)
-1.0
V
IC=-1A, VCE=-5V*
Static Forward Current Transfer
Ratio
hFE
100
100
80
15
Transition Frequency
fT
150
Output Capacitance
Cobo
IC=-1mA, VCE=-5V*
IC=-500mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-2A, VCE=-5V*
300
MHz IC=-50mA, VCE=-10V
f=100MHz
10
pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3 - 138
E
C
IC/IB=10
0.3
IC/IB=10
IC/IB=50
FMMT591
ISSUE 3 - OCTOBER 1995
✪
FEATURES
* Low Equivalent on resistance RCE(sat)=355mΩ at 1A*
3 - 137
VCB=-10V, f=1MHz
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
FMMT591
TYPICAL CHARACTERISTICS
0.6
0.6
+25 ° C
0.5
0.5
0.4
0.4
0.3
0.2
0
1mA
10mA
100mA
1A
10A
COMPLEMENTARY TYPE- FMMT491
PARTMARKING DETAIL - 591
PARAMETER
SYMBOL
VALUE
UNIT
0.1
Collector-Base Voltage
VCBO
-80
V
0
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-2
A
10mA
1mA
100mA
1A
10A
IC-Collector Current
IC-Collector Current
VCE(sat) v IC
400
VCE(sat) v IC
VCE=5V
IC/IB=10
1.0
300
+100 °C
200
+25 °C
0.8
0.2
1.2
10mA
100mA
1A
10A
0
1mA
10mA
100mA
1A
IC-Collector Current
IC-Collector Current
hFE V IC
VBE(sat) v IC
10A
10
VCE=5V
1.0
1
0.8
0.6
-55 °C
+25 °C
+100 °C
0.4
0.1
0.2
0
1mA
10mA
100mA
1A
10A
0.01
0.1V
IC
-1
A
Base Current
IB
-200
mA
500
mW
-55 to +150
°C
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
PARAMETER
-55 °C
+25 °C
+100 °C
-55 °C
0
1mA
Continuous Collector Current
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
0.6
0.4
100
B
ABSOLUTE MAXIMUM RATINGS.
-55 °C
+25 °C
+100 °C
0.2
0.1
DC
1s
100ms
10ms
1ms
100us
1V
10V
IC-Collector Current
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
100V
SYMBOL MIN.
MAX.
UNIT CONDITIONS.
Collector-Base Breakdown Voltage V(BR)CBO
-80
V
IC=-100µ A, IE=0
Collector-Emitter Breakdown
Voltage
V(BR)CEO
-60
V
IC=-10mA, IB=0*
-5
Emitter-Base Breakdown Voltage
V(BR)EBO
V
IE=-100µ A, IC=0
Collector Cut-Off Current
ICBO
-100
nA
VCB=-60V
Emitter Cut-Off Current
IEBO
-100
nA
VEB=-4V, IC=0
Collector-Emitter Cut-Off Current
ICES
-100
nA
VCES=-60V
Collector-Emitter Saturation
Voltage
VCE(sat)
-0.3
-0.6
V
V
IC=-500mA,IB=-50mA*
IC=-1A, IB=-100mA*
Base-Emitter Saturation Voltage
VBE(sat)
-1.2
V
IC=-1A, IB=-100mA*
Base-Emitter Turn-on Voltage
VBE(on)
-1.0
V
IC=-1A, VCE=-5V*
Static Forward Current Transfer
Ratio
hFE
100
100
80
15
Transition Frequency
fT
150
Output Capacitance
Cobo
IC=-1mA, VCE=-5V*
IC=-500mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-2A, VCE=-5V*
300
MHz IC=-50mA, VCE=-10V
f=100MHz
10
pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3 - 138
E
C
IC/IB=10
0.3
IC/IB=10
IC/IB=50
FMMT591
ISSUE 3 - OCTOBER 1995
✪
FEATURES
* Low Equivalent on resistance RCE(sat)=355mΩ at 1A*
3 - 137
VCB=-10V, f=1MHz
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