DIODES ZXMN4A06K

ZXMN4A06K
40V N-channel enhancement mode MOSFET
Summary
V(BR)DSS= -40V; RDS(ON) = 0.05; ID = 10.9A
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage,
power management applications.
Features
D
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
DPAK package
G
S
Applications
•
DC - DC converters
•
Audio output stages
•
Relay and solenoid driving
•
Motor control
Ordering information
Device
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
13
16
2,500
ZXMN4A06KTC
Device marking
Pinout - Top view
ZXMN
4A06
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ZXMN4A06K
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Drain-source voltage
VDSS
40
V
Gate-source voltage
VGS
20
V
10.9
A
8.7
A
7.2
A
Continuous drain current:
VGS=10V; TA=25°C (b)
VGS=10V; TA=70°C (b)
ID
VGS=10V; TA=25°C (a)
Pulsed drain current (c)
IDM
35.3
A
Continuous source current (body diode)
IS
10.8
A
Pulsed source current (body diode) (c)
ISM
35.3
A
Power dissipation at TA=25°C (a)
Linear derating factor
PD
4.2
33.6
W
mW/°C
Power dissipation at TA=25°C (b)
Linear derating factor
PD
9.5
76
W
mW/°C
Power dissipation at TA=25°C (d)
Linear derating factor
PD
2.15
17.2
W
mW/°C
-55 to +150
°C
Value
Unit
(b)
Operating and storage temperature range Tj:Tstg
Thermal resistance
Parameter
Symbol
Junction to ambient (a)
RJA
30
°C/W
Junction to ambient (b)
RJA
13.2
°C/W
Junction to ambient (d)
RJA
58
°C/W
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum
junction temperature.
(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
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ZXMN4A06K
Characteristics
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ZXMN4A06K
Electrical characteristics (at TA = 25°C unless otherwise stated)
Parameter
Symbol
Min.
V(BR)DSS
40
Typ.
Max.
Unit
Conditions
Static
Drain-source breakdown
voltage
Zero gate voltage drain current IDSS
Gate-body leakage
IGSS
Gate-source threshold voltage VGS(th)
V
ID=250A, VGS=0V
1
A
VDS=40V, VGS=0V
100
nA
VGS=±20V, VDS=0V
1.0
V
ID=250A, VDS= VGS
0.050
VGS=10V, ID=4.5A
0.075
VGS=4.5V, ID=3.2A
VDS=15V,ID=4.5A
Static drain-source on-state
resistance (*)
RDS(on)
Forward transconductance(‡)
gfs
11.5
S
Input capacitance
Ciss
827
pF
Output capacitance
Coss
133
pF
Reverse transfer capacitance
Crss
84
pF
Turn-on delay time
td(on)
3.2
ns
Rise time
tr
3.8
ns
Turn-off delay time
td(off)
23.3
ns
Fall time
tf
10.9
ns
Total gate charge
Qg
17.1
nC
Gate-source charge
Qgs
2.41
nC
Gate-drain charge
Qgd
3.4
nC
Diode forward voltage(*)
VSD
0.83
Reverse recovery time(†)
trr
Reverse recovery charge(‡)
Qrr
Dynamic (‡)
VDS=20 V, VGS=0V,
f=1MHz
Switching (†) (‡)
VDD =20V, ID=1A
RG=6.0, VGS=10V
(refer to test circuit)
VDS=20V,VGS=10V,
ID=4.5A
(refer to test circuit)
Source-drain diode
0.95
V
TJ=25°C, IS=4.5A,
VGS=0V
16
ns
9
nC
TJ=25°C, IF=4A,
di/dt= 100A/s
NOTES:
(*) Measured under pulsed conditions. Width 300s. Duty cycle 2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
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ZXMN4A06K
Typical charactersitics
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ZXMN4A06K
Typical characteristics
Current
regulator
QG
12V
VG
QGS
50k
Same as
D.U.T
QGD
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VCC
10%
VGS
td(on)
tr
t(on)
td(off)
tr
t(on)
Switching time waveforms
Issue 1 - March 2006
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Switching time test circuit
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ZXMN4A06K
Intentionally left blank
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ZXMN4A06K
Package details - DPAK
Package dimensions
Dim.
A
A1
b
b2
b3
c
c2
D
D1
E
E1
Inches
Min.
Max.
0.086
0.094
0.005
0.020
0.035
0.030
0.045
0.205
0.215
0.018
0.024
0.018
0.023
0.213
0.245
0.205
0.250
0.265
0.170
-
Millimeters
Min.
Max.
2.18
2.39
0.127
0.508
0.89
0.762
1.14
5.21
5.46
0.457
0.61
0.457
0.584
5.41
6.22
5.21
6.35
6.73
4.32
-
Dim.
e
H
L
L1
L2
L3
L4
L5
1°
°
-
Inches
Min.
Max.
0.090 BSC
0.370
0.410
0.055
0.070
0.108 REF
0.020 BSC
0.035
0.065
0.025
0.040
0.045
0.060
0°
10°
0°
15°
-
Millimeters
Min.
Max.
2.29 BSC
9.40
10.41
1.40
1.78
2.74 REF
0.508 BSC
0.89
1.65
0.635
1.016
1.14
1.52
0°
10°
0°
15°
-
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Zetex Inc
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
Zetex (Asia Ltd)
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
For international sales offices visit www.zetex.com/offices
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 1 - March 2006
© Zetex Semiconductors plc 2005
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