BAV100 thru BAV103 Small-Signal Diode Fast Switching Diodes Features Silicon Epitaxial Planar Diodes For general purpose These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21. Mechanical Data Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05g Cathode Band Color: Yellow Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted.) Parameter Continuous reverse voltage Repetitive peak reverse voltage Forward DC current at Tamb=25oC (1) Rectified current (Average) half wave rectification with resist. load at Tamb=25oC and f>50Hz (1) Repetitive peak forward current at f>50Hz, Θ=180O, Tamb=25oC (1) o Symbol Limit Unit BAV100 BAV101 BAV102 BAV103 VR 50 100 150 200 Volts BAV100 BAV101 BAV102 BAV103 VRRM 60 120 200 250 Volts IF 250 mA IF(AV) 200 mA IFRM 625 mA Amp Surge forward current at t<1s and Tj=25 C IFSM 1.0 Power dissipation at Tamb=25oC Ptot 400 (1) Thermal resistance junction to ambient air Junction temperature Storage temperature range Notes: (1) (1) mW o RθJA 375 Tj 175 o C -65 to +175 o C TS 1. Valid provided that electrodes are kept at ambient temperature 639 C/W Electrical Characteristics (TJ=25oC unless otherwise noted.) Parameter Forward voltage Leakage current BAV100 BAV100 BAV101 BAV101 BAV102 BAV102 BAV103 BAV103 Dynamic forward resistance Capacitance Reverse recovery time Symbol Test Condition VF IF=100mA IF=200mA Min. Typ. Max. Unit - - 1.00 1.25 Volts IR VR=50V VR=50V, Tj=100OC VR=100V VR=100V, Tj=100OC VR=150V VR=150V, Tj=100OC VR=200V VR=200V, Tj=100OC - - 100 15 100 15 100 15 100 15 nA uA nA uA nA uA nA uA γf IF=10mA - 5 - Ω Ctot VR=0V, f=1MHz - 1.5 - pF trr IF=30mA, IR=30mA Irr=3mA, RL=100Ω - - 50 ns RATINGS AND CHARACTERISTIC CURVES (TA = 25oC unless otherwise noted.) 640 RATINGS AND CHARACTERISTIC CURVES (TA = 25oC unless otherwise noted.) 641