SPICE MODELS: MIMD10A MIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT NEW PRODUCT Features · · · · Epitaxial Planar Die Construction A Built-In Biasing Resistors C2 One 500mA PNP and One 100mA NPN E1 Available in Lead Free/RoHS Compliant Version (Note 2) B C Mechanical Data · · SOT-363 B1 E2 B2 C1 G H Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 · · · Moisture Sensitivity: Level 1 per J-STD-020C · · · · Marking Code: C73 (See Page 2) K M J Terminals: Solderable per MIL-STD-202, Method 208 D L F Also available in Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 4, on Page 2 Ordering & Date Code: See Page 2 Tr1 Tr2 Max 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 0.10 J ¾ K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 a 0° 8° R1 R 2 Tr2 Weight: 0.015 grams (approx.) MIMD10A Min A All Dimensions in mm Terminal Connections: See Diagram P/N Dim R1 R2 0.1K 10K 10K - R1 Tr1 SCHEMATIC DIAGRAM Maximum Ratings PNP Section Tr1 Characteristic @ TA = 25°C unless otherwise specified Symbol Value Supply Voltage VCC -50 V Input Voltage VIN -5 to +5 V Output Current IO -500 mA Maximum Ratings NPN Section Tr2 Characteristic Unit @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V IC 100 mA Symbol Value Unit Pd 200 mW Tj, TSTG -55 to +150 °C Collector Current Maximum Ratings - Total @ TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 1) Operating and Storage Temperature Range Notes: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30381 Rev. 5 - 2 1 of 3 www.diodes.com MIMD10A ã Diodes Incorporated Characteristic @ TA = 25°C unless otherwise specified Symbol Min Typ Max Vl(off) -0.3 ¾ ¾ Vl(on) ¾ ¾ -1.5 VO(on) ¾ -0.1 -0.3 V Il ¾ ¾ -25 mA VI = -2V IO(off) ¾ ¾ -0.5 mA VCC = -50V, VI = 0V Gl 68 ¾ ¾ ¾ Input Voltage Output Voltage Input Current Output Current DC Current Gain ¾ fT Gain-Bandwidth Product* ¾ 200 Unit V MHz Test Condition VCC = -5V, IO = -100mA VO = 0.3, IO = -100mA IO = -100mA/-5mA ¾ VCE = -10V, IE = -50mA, f = 100MHz * Transistor - For Reference Only Electrical Characteristics NPN Section Tr2 Characteristic @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO 50 ¾ ¾ V IC = 50mA Collector-Emitter Breakdown Voltage BVCEO 50 ¾ ¾ V IC = 1mA Emitter-Base Breakdown Voltage BVEBO 5 ¾ ¾ V IE = 50mA ICBO ¾ ¾ 0.5 mA VCB = 50V Collector Cutoff Current IEBO ¾ ¾ 0.5 mA VCE(sat) ¾ ¾ 0.3 V DC Current Transfer Ratio hFE 100 250 600 ¾ IC = 1mA, VCE = 5V Gain-Bandwidth Product* fT ¾ 250 ¾ MHz VCE = 10V, IE = -5mA, f = 100MHz Emitter Cutoff Current Collector-Emitter Saturation Voltage VEB = 4V IC/IB = 10mA / 1.0mA * Transistor - For Reference Only Ordering Information (Note 3) Device Packaging Shipping MIMD10A-7 SOT-363 3000/Tape & Reel Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MIMD10-A-7-F. Marking Information C73 C73 = Product Type Marking Code YM = Date Code Marking Y = Year ex: P = 2003 M = Month ex: 9 = September YM NEW PRODUCT Electrical Characteristics PNP Section Tr1 Date Code Key Year 2003 2004 2005 2006 2007 2008 2009 2010 2011 Code P R S T U V W X Y Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30381 Rev. 5 - 2 2 of 3 www.diodes.com MIMD10A 1 VCE(SAT), MAXIMUM COLLECTOR VOLTAGE (V) PD, POWER DISSIPATION (MILLIWATTS) (TOTAL PACKAGE) 250 200 150 100 50 0 -50 0 50 100 IC/IB = 10 0.1 75°C -25°C 25°C 0.01 0.001 150 10 0 50 IE = 0mA -25°C 25°C 100 40 30 4 VCE = 10 75°C COB, CAPACITANCE (pF) hFE, DC CURRENT GAIN (NORMALIZED) 1000 20 IC, COLLECTOR CURRENT (mA) Fig. 2 VCE(SAT) vs. IC TA, AMBIENT TEMPERATURE (°C) Fig. 1 Derating Curve 10 3 2 1 0 0 1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 3 DC Current Gain 10 5 100 15 30 25 20 VR, REVERSE BIAS VOLTAGE (V) Fig. 4 Output Capacitance 100 10 75°C VO = 0.2 25°C 10 -25°C Vin, INPUT VOLTAGE (V) IC, COLLECTOR CURRENT (mA) NEW PRODUCT TYPICAL CURVES - Tr2 1 0.1 0.01 0.001 0 1 2 3 4 5 6 7 8 9 10 -25°C 25°C 1 Vin, INPUT VOLTAGE (V) Fig. 5 Collector Current Vs. Input Voltage DS30381 Rev. 5 - 2 75°C 1 3 of 3 www.diodes.com 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 6 Input Voltage vs. Collector Current MIMD10A