Renesas BCR1AM-12-TB Triac low power use Datasheet

BCR1AM-12
Triac
Low Power Use
REJ03G0344-0100
Rev.1.00
Aug.20.2004
Features
•
•
•
•
• Non-Insulated Type
• Glass Passivation Type
IT (RMS) : 1 A
VDRM : 600 V
IFGTI , IRGTI, IRGTⅢ : 5 mA (3 mA)Note5
IFGTⅢ : 10 mA
Outline
TO-92
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
3
2
Applications
Contactless AC switch, fan motor, rice-cooker, electric pot, air cleaner, heater, refrigerator, washing machine, electric
fan, vending machine, trigger circuit for low and medium triac, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Rev.1.00, Aug.20.2004, page 1 of 6
Symbol
Voltage class
12
Unit
VDRM
VDSM
600
720
V
V
BCR1AM-12
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
1.0
Unit
A
Surge on-state current
ITSM
10
A
I2 t
0.41
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
1
0.1
6
0.5
– 40 to +125
– 40 to +125
0.23
W
W
V
A
°C
°C
g
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Notes: 1. Gate open.
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 56°CNote3
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Electrical Characteristics
Parameter
Symbol
Rated value
Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak off-state current
IDRM
—
—
0.5
mA
On-state voltage
VTM
—
—
1.6
V
Tc = 25°C, ITM = 1.5 A,
Instantaneous measurement
Ι
ΙΙ
ΙΙΙ
VFGTΙ
VRGTΙ
VRGTΙΙΙ
—
—
—
—
—
—
2.0
2.0
2.0
V
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
ΙV
Ι
ΙΙ
ΙΙΙ
ΙV
VFGTΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
IFGTΙΙΙ
—
—
—
—
—
—
—
—
—
—
2.0
5
5Note5
5Note5
10
V
mA
mA
mA
mA
VGD
Rth (j-c)
(dv/dt)c
0.1
—
2
—
—
—
—
50
—
V
°C/W
V/µs
Gate trigger voltageNote2
Note2
Gate trigger current
Gate non-trigger voltage
Thermal resistance
Tj = 125°C, VDRM applied
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Tj = 125°C, VD = 1/2 VDRM
Junction to caseNote3
Tj = 125°C
Critical-rate of rise of off-state
Note4
commutating voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
5. High sensitivity (IGT ≤ 3 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 0.5 A/ms
3. Peak off-state voltage
VD = 400 V
Rev.1.00, Aug.20.2004, page 2 of 6
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
BCR1AM-12
Performance Curves
102
7 Tj = 25°C
5
3
2
Rated Surge On-State Current
10
Surge On-State Current (A)
On-State Current (A)
Maximum On-State Characteristics
101
7
5
3
2
100
7
5
3
2
2 3 4 5 7 101
2 3 4 5 7 102
Gate Trigger Current vs.
Junction Temperature
PG(AV)
= 0.1W
VGM = 6V
PGM =
1W
IGM
= 0.5A
IFGT III
VGD = 0.1V
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics
103
7
5
4
3
2
Typical Example
IFGT I, IRGT I
102
7
5
4
3
2
IRGT III, IFGT III
101
–60 –40 –20 0 20 40 60 80 100 120 140
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal
Impedance Characteristics
(Junction to case, Junction to ambient)
103
7
5
4
3
2
Typical Example
VFGT I, VRGT I
VRGT III,VFGT III
101
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Rev.1.00, Aug.20.2004, page 3 of 6
Transient Thermal Impedance (°C/W)
Gate Voltage (V)
2
Conduction Time (Cycles at 60Hz)
10–2
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
4
On-State Voltage (V)
100
7
5
3 IFGT I
2 IRGT I
IRGT III
–1
10
7
5
3
2
102
7
5
4
3
2
6
0
100
10–1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
101
7
5
3
2
8
102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105
103
7
5
3
2
Junction to ambient
102
7
5
Junction to case
3
2
101
7
5
3
2
100
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60Hz)
BCR1AM-12
Allowable Case Temperature vs.
RMS On-State Current
Maximum On-State Power Dissipation
160
1.2
0.8
0.4
0
360° Conduction
Resistive,
inductive loads
0
0.8
1.2
1.6
2.0
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
120
100
80
60
40
20
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
RMS On-State Current (A)
105
7 Typical Example
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Latching Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
103
7
5
4
3
2
Typical Example
Latching Current (mA)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Curves apply regardless
of conduction angle
RMS On-State Current (A)
140
0
140
RMS On-State Current (A)
160
Ambient Temperature (°C)
0.4
Case Temperature (°C)
1.6
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
On-State Power Dissipation (W)
2.0
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Rev.1.00, Aug.20.2004, page 4 of 6
103
7
5
3
2
Distribution
T2+, G–
Typical Example
102
7
5
3
2
101
7
5
3
2
T2+, G+
T2–, G– Typical Example
T2–, G+
100
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
BCR1AM-12
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
101
7
5
4
3
2
Typical Example
Tj = 125°C
140
120
I Quadrant
100
80
60
40
III Quadrant
20
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Commutation Characteristics
Gate Trigger Current vs.
Gate Current Pulse Width
III Quadrant
Minimum
Characteristics
Value
I Quadrant
10–1 –1
10
160
Rate of Rise of Off-State Voltage (V/µs)
Typical Example
Tj = 125°C
IT = 1A
τ = 500µs
VD = 200V
100
7
5
4
3
2
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Junction Temperature (°C)
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Breakover Voltage vs.
Junction Temperature
2 3 4 5 7 100
2 3 4 5 7 101
Rate of Decay of On-State
Commutating Current (A/ms)
6Ω
A
6V
V
A
6V
330Ω
330Ω
V
Test Procedure I
Test Procedure II
6Ω
6Ω
A
6V
V
330Ω
Test Procedure III
Rev.1.00, Aug.20.2004, page 5 of 6
102
7
5
4
3
2
101 0
10
Typical Example
IFGT I
IFGT III
IRGT III
IRGT I
2 3 4 5 7 101
2 3 4 5 7 102
Gate Current Pulse Width (µs)
Gate Trigger Characteristics Test Circuits
6Ω
103
7
5
4
3
2
A
6V
V
330Ω
Test Procedure IV
BCR1AM-12
Package Dimensions
TO-92
EIAJ Package Code
JEDEC Code
Mass (g) (reference value)
Lead Material
Conforms
Conforms
0.23
Cu alloy
φ 5.0 max
11.5 min
5.0 max
4.4
1.25 1.25
3.6
1.1
Circumscribed circle φ 0.7
Symbol
Dimension in Millimeters
Min
Typ
Max
A
A1
A2
b
D
E
e
x
y
y1
ZD
ZE
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form
Standard packing
Quantity
Standard order code
Straight type
Vinyl sack
500 Type name
Lead form
Vinyl sack
500 Type name – Lead forming code
Form A8
Taping
2000 Type name – TB
Note : Please confirm the specification about the shipping in detail.
Rev.1.00, Aug.20.2004, page 6 of 6
Standard order
code example
BCR1AM-12
BCR1AM-12-A6
BCR1AM-12-TB
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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