G2SB20 thru G2SB80 Vishay Semiconductors New Product formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Reverse Voltage 200 to 800V Forward Current 1.5A Case Type GBL 0.825 (20.9) 0.815 (20.7) 0.125 (3.17) x 45 degrees Chamfer Features 0.421 (10.7) 0.411 (10.4) 0.080 (2.03) 0.060 (1.50) 0.098 (2.5) 0.075 (1.9) 0.095 (2.41) 0.080 (2.03) 0.098 (2.5) 0.075 (1.9) 0.718 (18.2) 0.682 (17.3) Lead Depth 0.022 (0.56) 0.018 (0.46) 0.043 (1.1) 0.035 (0.9) • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • This series is UL listed under the Recognized Component Index, file number E54214 • High case dielectric strength • Ideal for printed circuit boards • Glass passivated chip junction • High surge current capability • High temperature soldering guaranteed: 260°C/10 seconds, 0.375 (9.5mm) lead length, 5lbs. (2.3kg) tension Mechanical Data 0.210 (5.3) 0.190 (4.8) 0.040 (1.02) 0.030 (0.76) Case: Molded plastic body over passivated junctions Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Mounting Position: Any Weight: 0.071 oz., 2.0 g Packaging codes/options: 1/400 EA. per Bulk Tray Stack, 4K/box 0.140 (3.56) 0.128 (3.25) 0.022 (0.56) 0.018 (0.46) Polarity shown on front side of case, positive lead beveled corner. Dimensions in inches and (millimeters) Maximum Ratings & Thermal Characteristics Parameter Ratings at 25°C ambient temperature unless otherwise specified. Symbol G2SB20 G2SB60 G2SB80 Unit Maximum repetitive peak reverse voltage VRRM 200 600 800 V Maximum RMS voltage VRMS 140 420 560 V Maximum DC blocking voltage VDC 200 600 800 V Maximum average forward rectified output current at TA = 25°C IF(AV) 1.5 A Peak forward surge current single sine-wave superimposed on rated load (JEDEC Method) IFSM 80 A I2t 27 A2sec RθJA RθJL 40 12 °C/W TJ, TSTG –55 to +150 °C Rating for fusing (t<8.3ms) Typical thermal resistance per leg Operating junction storage and temperature range Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol Maximum instantaneous forward voltage drop per leg at 0.75 A Maximum DC reverse current at rated DC blocking voltage per leg TA = 25°C TA =125°C G2SB20 G2SB60 G2SB80 Unit VF 1.00 V IR 5.0 300 µA Note: (1) Unit mounted on P.C.B. with 0.5 x 0.5" (12 x 12mm) copper pads and 0.375” (9.5mm) lead length Document Number 88603 21-Mar-02 www.vishay.com 1 G2SB20 thru G2SB80 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 1 - Derating Curve Output Rectified Current Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Leg 100 Peak Forward Surge Current (A) Average Forward Output (IF(AV) ) 2 P.C.B. Mounting, TA 1.5 1 0.5 0 80 60 40 20 1.0 Cycle 0 0 25 50 75 100 125 1 150 100 Number of Cycles at 60 Hz Temperature (°C) Fig. 3 - Typical Forward Characteristics Per Leg Fig. 4 - Typical Reverse Characteristics Per Leg 100 Instantaneous Reverse Current ( A) Instantaneous Forward Current (A) 100 10 1 0.1 0.01 TA = 125°C 10 1 0.1 TA = 25°C 0.01 0.6 1 1.4 1.8 2.2 2.6 3 0 3.4 Instantaneous Forward Voltage (V) Fig. 5 - Typical Junction Capacitance Per Leg 40 60 80 100 Fig. 6 - Typical Transient Thermal Impedance Transient Thermal Impedance (°C/W) 100 Junction Capacitance (pF) 20 Percent of Rated Peak Reverse Voltage (%) 10 1 100 10 1 0.1 0.01 0.1 1 10 Reverse Voltage (V) www.vishay.com 2 100 0.01 0.1 1 10 100 t, Heating Time (sec.) Document Number 88603 21-Mar-02