IRF630B/IRFS630B 200V N-Channel MOSFET Features • • • • • • TO-220 TO-220F IRF Series IRFS Series 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 22 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description These N-Channel enhancement mode power field effect transistors are produced using Kersemi proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. D G S Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current IRF630B IRFS630B Units V 9.0 9.0 * A 5.7 5.7 * A 36 36 * A 200 - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 160 mJ IAR Avalanche Current (Note 1) 9.0 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 1) 7.2 5.5 -55 to +150 mJ V/ns W W/°C °C 300 °C dv/dt PD TJ, TSTG TL - Pulsed (Note 1) (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 72 0.57 38 0.3 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case Max. RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W 2014-8-9 1 IRF630B 1.74 IRFS630B 3.33 Units °C/W www.kersemi.com IRF630B/IRFS630B Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 200 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.2 VDS = 200 V, VGS = 0 V -- -- 10 µA VDS = 160 V, TC = 125°C -- -- 100 µA Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 0.34 0.4 Ω -- 7.05 -- S -- 550 720 pF -- 85 110 pF -- 22 29 pF IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.5 A gFS Forward Transconductance VDS = 40 V, ID = 4.5 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 100 V, ID = 9.0 A, RG = 25 Ω (Note 4, 5) VDS = 160 V, ID = 9.0 A, VGS = 10 V (Note 4, 5) -- 11 30 ns -- 70 150 ns -- 60 130 ns -- 65 140 ns -- 22 29 nC -- 3.6 -- nC -- 10.2 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 9.0 A ISM -- -- 36 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 9.0 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 9.0 A, dIF / dt = 100 A/µs (Note 4) -- 140 -- ns -- 0.87 -- µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 3mH, IAS = 9.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 9.0A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 2014-8-9 2 www.kersemi.com IRF630B/IRFS630B Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C 0 10 o 25 C o -55 C ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test -1 -1 10 10 -1 0 10 2 1 10 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2.5 1 10 VGS = 10V IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 2.0 1.5 VGS = 20V 1.0 0.5 0 10 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test ※ Note : TJ = 25℃ 0.0 -1 0 5 10 15 20 10 25 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 1500 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 40V 10 VGS, Gate-Source Voltage [V] VDS = 100V Capacitance [pF] 1000 Ciss Coss 500 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz Crss VDS = 160V 8 6 4 2 ※ Note : ID = 9.0 A 0 -1 10 2014-8-9 0 0 10 0 1 10 4 8 12 16 20 24 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 3 www.kersemi.com IRF630B/IRFS630B Typical Characteristics (Continued) 3.0 1.2 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 4.5 A 0.5 0.0 -100 200 1 150 200 100 µs 1 ms 10 1 ms 10 ms DC 0 10 ※ Notes : 10 ms 100 ms DC 0 10 ※ Notes : -1 10 o o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 -1 10 100 Operation in This Area is Limited by R DS(on) 1 100 µs ID, Drain Current [A] ID, Drain Current [A] 10 Operation in This Area is Limited by R DS(on) 10 50 Figure 8. On-Resistance Variation vs Temperature 2 2 0 TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature 10 -50 o o TJ, Junction Temperature [ C] 10 0 1 10 2 10 0 10 10 1 10 2 10 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 9-1. Maximum Safe Operating Area for IRF630B Figure 9-2. Maximum Safe Operating Area for IRFS630B 10 ID, Drain Current [A] 8 6 4 2 0 25 50 75 100 125 150 TC, Case Temperature [℃] Figure 10. Maximum Drain Current vs Case Temperature 2014-8-9 4 www.kersemi.com IRF630B/IRFS630B 10 D = 0 .5 ※ N o te s : 1 . Z θ J C (t) = 1 .7 4 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .2 0 .1 10 (Continued) 0 0 .0 5 -1 PDM 0 .0 2 θ JC (t), T h e rm a l R e s p o n s e Typical Characteristics 0 .0 1 t1 Z s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] D = 0 .5 10 0 0 .2 ※ N o te s : 1 . Z θ J C (t) = 3 .3 3 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .1 0 .0 5 10 -1 0 .0 2 PDM 0 .0 1 θ JC (t), T h e r m a l R e s p o n s e Figure 11-1. Transient Thermal Response Curve for IRF630B Z t1 t2 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11-2. Transient Thermal Response Curve for IRFS630B 2014-8-9 5 www.kersemi.com IRF630B/IRFS630B Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD tp 2014-8-9 VDS (t) VDD DUT 10V ID (t) tp 6 Time www.kersemi.com Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop 2014-8-9 7 www.kersemi.com IRF630B/IRFS630B Package Dimensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 2014-8-9 8 www.kersemi.com IRF630B/IRFS630B Package Dimensions (Continued) 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ±0.20 2014-8-9 2.76 ±0.20 4.70 ±0.20 0.35 ±0.10 9 www.kersemi.com