DOMINANT NPF-TSD-AD Spnovaled ingan warm white high lumens : 350 ma Datasheet

DOMINANT
TM
DATA SHEET:
TM
Semiconductors SPNovaLED
Innovating Illumination
SPNovaLED
InGaN Warm White High Lumens : 350 mA
TM
Featuring a staggering brilliance and significant flux output, the
SPNovaLED™ showcases the latest technological advent in this
range. With its extremely high level of brightness and the ultra low
high profile, which is only 1.5 mm are highly suitable for both conventional lighting and specialized application such as automotive
signal lights, traffic lights, channel lights, tube lights and garden
lights among others.
Features:
> Super high brightness surface mount LED.
> High flux output; typical 42 lumens
> 120° viewing angle.
> Compact package outline (LxWxH) of 6.0 x 6.0 x 1.5mm.
> Ultra low height profile - 1.5 mm.
> Designed for high current drive; typically 350 mA.
> Low thermal resistance; Rth (js) = 18 K/W.
> Qualified according to JEDEC moisture sensitivity Level 2.
> Compatible to IR reflow soldering.
> Environmental friendly; RoHS compliance.
> SPNovaLED are Class 1M LED products. Do not view directly with
optical instrument.
Applications:
>
>
>
>
Automotive: exterior applications, eg: Fog-lamp, Rear Mirror Lighting, etc
Communication: FlashLED
Industry: white goods (eg: Oven, microwave, etc.).
Lighting: garden light, architecture lighting, general lighting. etc
© 2005 SPNovaLED is a trademark of DOMINANT Semiconductors.
All rights reserved. Product specifications are subject to change without notice.
1
13/09/2006 V1.0
DOMINANT TM
InGaN Warm White High Lumens : 350 mA
Semiconductors
Innovating Illumination
Part Ordering
Number
NPF-TSD-ABD-1
Chip Technology
/ Color
Viewing
Angle˚
Luminous Intensity @
IF = 350mA (mcd)
120
InGaN
9000.0 - 18000.0
• NPF-TSD-AB
9000.0 - 11250.0
• NPF-TSD-AC
11250.0 - 14000.0
• NPF-TSD-AD
14000.0 - 18000.0
NOTE
1. Luminous intensity is measured with an accuracy of ± 11%.
2. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength group is allowed for each reel.
Electrical Characteristics at Ta=25˚C
Part Number
NPF-TSD
Typ. (V)
Vf @ If = 350mA
Max. (V)
3.6
4.0
Forward voltages are measure using a current pulse of 1 ms and with an accuracy of ± 0.1V.
Material
Material
Lead-frame
Cu Alloy With Ag Plating
Package
High Temperature Resistant Plastic, PPA
Encapsulant
Silicone Resin
Soldering Leads
Sn-Sn Plating
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13/09/2006 V1.0
DOMINANT TM
InGaN Warm White High Lumens : 350 mA
Semiconductors
Innovating Illumination
Absolute Maximum Ratings
Maximum Value
Unit
DC forward current
350
mA
Peak pulse current
1000
mA
Not designed for reverse bias
V
ESD threshold (HBM)
2000
V
LED junction temperature
120
˚C
Operating temperature
-40 … +100
˚C
Storage temperature
-40 … +100
˚C
Reverse Voltage
Correlated Color Temperature (CCT)
Color Bin
Minimum CCT (K)
Maximum CCT (K)
A
3300
3600
B
3000
3300
C
2800
3000
Note: CCT values provided for each of the color bins are an approximation based on correlation.
Correlation Between Luminous Intensity And Luminous Flux
IV Bin
Luminous Intensity (mcd)
Luminous Flux (lm)
Min
Max
Min
Max
AB
9000
11250
25.0
32.0
AC
11250
14000
32.0
39.0
AD
14000
18000
39.0
50.0
Note: Data provided above is based on approximation.
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13/09/2006 V1.0
DOMINANT TM
InGaN Warm White High Lumens: 350 mA
Semiconductors
Innovating Illumination
Color Bin
White Bin Structure
0.48
0.44
0.40
0.36
0.32
•
•
A
•
•
0.41
0.42
•
•
B
•
•
C
0.28
0.24
0.20
0.39
0.40
0.43
0.44
0.45
0.46
0.47
Chromaticity coordinate groups are measured with an accuracy of ± 0.01.
Bin
A
B
C
Cx
1
2
3
4
0.400
0.420
0.420
0.400
0.387
Cy
0.340
0.362
0.408
Cx
0.420
0.440
0.440
0.420
0.408
Cy
0.362
0.383
0.430
Cx
0.440
0.460
0.460
0.440
0.405
0.452
0.430
Cy
0.383
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13/09/2006 V1.0
DOMINANT TM
InGaN Warm White High Lumens : 350 mA
Semiconductors
Innovating Illumination
Relative Flux Vs Forward Current
1.4
Relative Flux; Normalized at 350mA
Relative Intensity; Normalized at 350mA
Relative Intensity Vs Forward Current
1.2
1
0.8
0.6
0.4
0.2
0
0
200
400
1.2
1
0.8
0.6
0.4
0.2
0
600
0
200
400
600
Forward Current, mA
Forward Current, mA
Forward Current Vs Forward Voltage
Relative Spectral Emission
1
600
0.9
500
0.8
0.7
400
WarmWhite
Forward Current, mA
1.4
300
200
0.6
0.5
0.4
0.3
0.2
100
0.1
0
0
2
2.5
3
3.5
4
4.5
300
400
500
600
700
800
Wavelength, nm
Forward Current Vs Ambient Temperature (Rja=40K/W)
Forward Current Vs Solder Point Temperature
400
400
350
350
Forward Current, mA
Forward Current, mA
Forward Voltage, V
300
250
200
150
100
300
250
200
150
100
50
50
0
0
0
10
20
30
40
50
60
70
80
90 100
0
20
40
60
80
100
Solder Point Temperature
Ambient Temperature
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13/09/2006 V1.0
DOMINANT TM
InGaN Warm White High Lumens : 350 mA
Semiconductors
Innovating Illumination
Radiation Pattern
30
o
20
o
10 o
Maximum Permissible Pulse Current, Ta=25
0o
1000
1.0
900
50 o
60
o
70
o
0.8
Pulse Current, mA
40 o
0.6
0.4
0.2
700
600
500
400
300
80 o
200
0
1
10
100
Duty (%); Tp<=0.01 sec
Maximum Permissible Pulse Current, Ta=25
1000
Pulse Current, mA
900
800
700
600
500
400
300
200
1
10
100
Duty (%); Tp<=0.01 sec
Maximum Permissible Pulse Current, Ta=25
1000
900
Pulse Current, mA
90 o
800
800
700
600
500
400
300
200
1
6
10
Duty (%); Tp<=0.01 sec
100
13/09/2006 V1.0
DOMINANT TM
InGaN Warm White High Lumens : 350 mA
Semiconductors
Innovating Illumination
SPNovaLED • InGaN Warm White High Lumens : 350 mA Package Outlines
TM
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13/09/2006 V1.0
DOMINANT TM
InGaN Warm White High Lumens : 350 mA
Semiconductors
Innovating Illumination
Solder Pad Design
Note: Metal core circuit board (MCPCB) is highly recommended for applications.
Please consult sales and marketing for additional information.
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13/09/2006 V1.0
DOMINANT TM
InGaN Warm White High Lumens : 350 mA
Semiconductors
Innovating Illumination
Taping and orientation
• Reels come in quantity of 2000 units.
• Reel diameter is 330 mm.
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13/09/2006 V1.0
DOMINANT TM
InGaN Warm White High Lumens : 350 mA
Semiconductors
Innovating Illumination
Packaging Specification
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13/09/2006 V1.0
DOMINANT TM
InGaN Warm White High Lumens : 350 mA
Semiconductors
Innovating Illumination
Packaging Specification
Moisture sensitivity level
Barcode label
DOMINANT Semiconductors
ROHS Compliant
LOT NO : lotno
PB Free
PART NO : partno
QTY : qty
S/N : xxx
D/C: xxxx
GROUP : group
Reel
Moisture absorbent material +
Moisture indicator
The reel, moisture absorbent material and moisture indicator are
sealed inside the moisture proof foil bag
Average 1pc SPNovaLED
1 completed bag (2000pcs)
0.188
0.034
800 ± 10
190
10
Weight
Weight(gram)
(gram)
Cardboard
Box
DOMINANT TM
Semiconductors
For SPNovaLED
Cardboard Box
Size
Large
TM
Dimensions (mm)
416 x 516 x 476
Empty Box
Weight (kg)
Reel / Box
1.74
20 reels MAX
11
Quantity / Box (pcs)
40,000 MAX
13/09/2006 V1.0
DOMINANT TM
InGaN Warm White High Lumens : 350 mA
Semiconductors
Innovating Illumination
Recommended Sn-Pb IR-Reflow Soldering Profile
Classification Reflow Profile (JEDEC J-STD-020C)
275
235-240˚C
10-30s
250
225
Ramp-up
3˚C/sec max.
Temperature (˚C)
200
175
183˚C
150
60-150s
125
Rampdown
6˚C/sec
max.
100
75
Preheat 60-120s
50
360s max
25
0
50
100
150
200
Recommended Pb-free Soldering Profile
Classification Reflow Profile (JEDEC J-STD-020C)
300
255-260˚C
10-30s
275
250
Temperature (˚C)
Ramp-up
3˚C/sec max.
217˚C
225
200
60-150s
175
150
125
Rampdown
6˚C/sec
max.
100
75
Preheat 60-180s
50
25
480s max
0
50
100
150
200
Time (sec)
12
13/09/2006 V1.0
DOMINANT TM
InGaN Warm White High Lumens : 350 mA
Semiconductors
Innovating Illumination
Revision History
Page
Subjects
Date of Modification
-
Initial Release
13 Sep 2006
NOTE
All the information contained in this document is considered to be reliable at the time of publishing. However, DOMINANT
Semiconductors does not assume any liability arising out of the application or use of any product described herein.
DOMINANT Semiconductors reserves the right to make changes at any time without prior notice to any products in order
to improve reliability, function or design.
DOMINANT Semiconductors products are not authorized for use as critical components in life support devices or systems
without the express written approval from the Managing Director of DOMINANT Semiconductors.
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13/09/2006 V1.0
DOMINANT TM
Semiconductors
Innovating Illumination
InGaN Warm White High Lumens : 350 mA
About Us
DOMINANT Semiconductors is a dynamic Malaysian Corporation that is among the world’s leading SMT LED
Manufacturers. An excellence – driven organization, it offers a comprehensive product range for diverse industries
and applications. Featuring an internationally certified quality assurance acclaim, DOMINANT’s extra bright LEDs
are perfectly suited for various lighting applications in the automotive, consumer and communications as well as industrial sectors. With extensive industry experience and relentless pursuit of innovation, DOMINANT’s state-of-art
manufacturing, research and testing capabilities have become a trusted and reliable brand across the globe. More
information about DOMINANT Semiconductors can be found on the Internet at http://www.dominant-semi.com.
Please contact us for more information:
Head Quarter
DOMINANT Semiconductors Sdn. Bhd.
Lot 6, Batu Berendam, FTZ Phase III, 75350 Melaka, Malaysia
Tel: (606) 283 3566 Fax: (606) 283 0566
E-mail: [email protected]
DOMINANT China Sales Office
E-mail: [email protected]
DOMINANT Korea Sales Office
DOMINANT Semiconductors Korea Inc.
#709, Yatap Leaders Bldg., 342-1, Yatap-dong, Bundang-gu, Seongnam-si, Gyeonggi-do, 463-828 Korea
Tel: 82-31-701-5203 Fax: 82-31-701-5204
E-mail: [email protected]
DOMINANT
Semiconductors
Innovating Illumination
TM
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