DIODES FCX705

FCX705
120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR
SUMMARY
VCEO=120V; VCE(sat)= 1.3V; IC= -1A
DESCRIPTION
This new PNP Darlington transistor provides users with very efficient performance
combining low VCE (sat) and very high HFE to give extremely low on state losses at
120V operation. This makes it deal for use in a variety of efficient driving functions
including motors, lamps relays and solenoids and will also benefit circuits
requiring high output current switching.
SOT89
FEATURES
• Low Saturation Voltage
• HFE min 3K @ -1A
• IC= -2A Continuous
• SOT89 package with Ptot - 1W
• Specification is also available in Eline and SOT223
package outlines
APPLICATIONS
• Various driving functions
- Lamps
- Motors
- Relays and solenoids
• High output current switches
ORDERING INFORMATION
DEVICE
FCX705TA
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
7’‘
12mm
1000 units
DEVICE MARKING
705
Top View
ISSUE 4 - DECEMBER 2002
1
SEMICONDUCTORS
FCX705
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT PNP
UNIT
Collector-Base Voltage
V CBO
-140
V
Collector-Emitter Voltage
V CEO
-120
V
Emitter-Base Voltage
V EBO
-10
V
I CM
-4
A
Continuous Collector Current
IC
-1
A
Power Dissipation at TA=25°C (a)
Linear Derating Factor
PD
1
8
W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD
2.8
22
W
mW/°C
T j :T stg
-55 to +150
°C
Peak Pulse Current
Operating and Storage Temperature Range
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R θJA
125
°C/W
Junction to Ambient (b)
R θJA
45
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
ISSUE 4 - DECEMBER 2002
SEMICONDUCTORS
2
FCX705
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V (BR)CBO
-140
V
I C = -100␮A
Collector-Emitter Breakdown
Voltage
V (BR)CEO
-120
V
I C = -10mA*
Emitter-Base Breakdown Voltage
V (BR)EBO
-10
V
I E = -100␮A
Collector Cut-Off Current
I CBO
-100
nA
V CB = -10V
-10
µA
V CB = -120V
Tamb = 100°C
Emitter Cut-Off Current
I EBO
-0.1
µA
V EB = -8V
Collector Emitter Cut-Off Current
I CES
-10
µA
V CES = -120V
Collector-Emitter Saturation
Voltage
V CE(sat)
-1.3
V
-2.5
V
I C = -1A, I B = -1mA*
I C = -2A, I B = -2mA*
Base-Emitter Saturation Voltage
V BE(sat)
-1.8
V
I C = -1A, I B = -1mA*
Base-Emitter Turn-On Voltage
V BE(on)
-1.7
V
I C = -1A, V CE = -5V*
Static Forward Current Transfer
Ratio
h FE
Transition Frequency
fT
Input Capacitance
C ibo
Output Capacitance
3K
3K
3K
2K
IC=
IC=
IC=
IC=
30K
160
-10mA, V CE = -5V*
-100mA, V CE = -5V*
-1A, V CE = -5V*
-2A, V CE = -5V*
MHz
I C = -100mA, V CE = -10V
f= 20MHz
90
pF
V CB = -500mV, f= 1MHz
C obo
15
pF
V CB = -10V, f= 1MHz
Turn-On Time
t (on)
0.6
µs
I C = -500mA, V CE = -10V
I B1 =I B2 = -0.5mA
Turn-Off Time
t (off)
0.8
µs
I C = -500mA, V CE = -10V
I B1 =I B2 = -0.5mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Nb. Spice parameter data is available upon request for this device.
ISSUE 4 - DECEMBER 2002
3
SEMICONDUCTORS
FCX705
PNP CHARACTERISTICS
ISSUE 4 - DECEMBER 2002
SEMICONDUCTORS
4
FCX705
PACKAGE DIMENSIONS
PAD LAYOUT DETAILS
A
H
C
K
D B
G
F
N
Millimetres
Inches
DIM
Min
Max
Min
Max
A
4.40
4.60
0.173
0.181
B
3.75
4.25
.150
0.167
C
1.40
1.60
0.550
0.630
D
-
2.60
-
0.102
F
0.28
0.45
0.011
0.018
G
0.38
0.55
0.015
0.022
H
1.50
1.80
0.060
0.072
K
2.60
2.85
0.102
0.112
L
2.90
3.10
0.114
0.112
N
1.4
1.60
0.055
0.063
© Zetex plc 2003
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ISSUE 4 - DECEMBER 2002
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SEMICONDUCTORS