DIODES ZXM64P03XTC

ZXM64P03X
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS=-30V; RDS(ON)=0.075
ID=-3.8A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
MSOP8
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC converters
• Power management functions
• Disconnect switches
• Motor control
Pin out
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
7
12 embossed
1,000
ZXM64P03XTA
ZXM64P03XTC
13
12 embossed
4,000
DEVICE MARKING
S
S
1
D
D
S
D
G
D
Top view
ZXM4P03
ISSUE 1 - OCTOBER 2005
1
SEMICONDUCTORS
ZXM64P03X
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V DSS
-30
V
Gate- Source Voltage
V GS
⫾20
V
ID
-3.8
-3.0
A
Continuous Drain Current
(VGS=4.5V;
(VGS=4.5V;
TA=25°C)(b)
TA=70°C)(b)
Pulsed Drain Current (c)
I DM
-19
A
Continuous Source Current (Body Diode)(b)
IS
-2.3
A
Pulsed Source Current (Body Diode)(c)
I SM
-19
A
Power Dissipation at T A =25°C (a)
Linear Derating Factor
PD
1.1
8.8
W
mW/°C
Power Dissipation at T A =25°C (b)
Linear Derating Factor
PD
1.8
14.4
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)
R θJA
113
°C/W
Junction to Ambient (b)
R θJA
70
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
ISSUE 1 - OCTOBER 2005
2
SEMICONDUCTORS
ZXM64P03X
CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
3
SEMICONDUCTORS
ZXM64P03X
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown Voltage
V (BR)DSS
-30
Zero Gate Voltage Drain Current
I DSS
TYP.
MAX. UNIT
CONDITIONS
STATIC
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State Resistance
(1)
R DS(on)
Forward Transconductance (3)
g fs
-1
±100
-1.0
0.075
0.100
2.3
V
I D =-250µA, V GS =0V
µA
V DS =-30V, V GS =0V
nA
V GS =± 20V, V DS =0V
V
I =-250µA,
D
V DS = V GS
Ω
Ω
V GS =-10V, I D =-2.4A
V GS =-4.5V, I D =-1.2A
S
V DS =-10V,I D =-1.2A
DYNAMIC (3)
Input Capacitance
C iss
825
pF
Output Capacitance
C oss
250
pF
Reverse Transfer Capacitance
C rss
80
pF
t d(on)
4.4
ns
Rise Time
tr
6.2
ns
Turn-Off Delay Time
t d(off)
40
ns
Fall Time
tf
Total Gate Charge
Qg
46
nC
Gate-Source Charge
Q gs
9
nC
Gate Drain Charge
Q gd
11.5
nC
Diode Forward Voltage (1)
V SD
-0.95
V
T j =25°C, I S =-2.4A,
V GS =0V
Reverse Recovery Time (3)
t rr
30.2
ns
Reverse Recovery Charge(3)
Q rr
27.8
nC
T j =25°C, I F =-2.4A,
di/dt= 100A/µs
V DS =-25 V, V GS =0V,
f=1MHz
SWITCHING(2) (3)
Turn-On Delay Time
29.2
ns
V DD =-15V, I D =-2.4A
R G =6.2Ω, R D =6.2Ω
(Refer to test
circuit)
VDS =-24V,VGS =-10V,
I D =-2.4A
(Refer to test
circuit)
SOURCE-DRAIN DIODE
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2005
4
SEMICONDUCTORS
ZXM64P03X
TYPICAL CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
5
SEMICONDUCTORS
ZXM64P03X
TYPICAL CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
6
SEMICONDUCTORS
ZXM64P03X
PACKAGE DETAILS
PAD LAYOUT DETAILS
c
e
1.02
0.040
E
E1
4.8
0.189
R1
mm
inches
D
L
R
A2
A
0.41
0.016
A1
b
0.65
0.023
PACKAGE DIMENSIONS
DIM
Millimeters
MIN
Inches
MAX
MIN
MAX
0.044
0.91
A1
0.10
0.20
0.004
0.008
B
0.25
0.36
0.010
0.014
C
0.13
D
2.95
e
1.11
0.036
A
0.18
3.05
0.005
0.116
0.65NOM
e1
0.007
0.120
0.0256
0.33NOM
0.0128
E
2.95
3.05
H
4.78
L
0.41
0.66
0.016
0.026
␪°
0°
6°
0°
6°
5.03
0.116
0.120
0.188
0.198
© Zetex Semiconductors plc 2005
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
7
1