Rohm DTD543EE Low vce (sat) digital transistors with built-in resistors) Datasheet

Low VCE (sat) Digital transistors
(with built-in resistors)
DTD543EE / DTD543EM
zDimensions (Unit : mm)
zApplications
Inverter, Interface, Driver
DTD543EE
0.7
1.6
0.55
0.3
zStructure
NPN digital transistor (Built-in resistor type)
(2)
1.6
0.8
(3)
0.2
0.15
0.5 0.5
1.0
EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
zFeature
1. VCE (sat) is lower than conventional products.
2. Built-in bias resistors enable the configuration of
an inverter circuit without connecting
external input resistors (see equivalent circuit).
3. The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
4. Only the on / off conditions need to be set for operation,
making device design easy.
0.1Min.
(1)
0.2
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Addreviated symbol : X23
1.2
0.32
0.2
DTD543EM
0.8
1.2
(3)
(1)(2)
0.4 0.4
0.2
0.22
0.13
0.5
0.8
(1) IN
(2) GND
(3) OUT
VMT3
Each lead has same dimensions
Addreviated symbol : X23
zPackaging specifications
Package
EMT3
VMT3
Packaging type
Taping
Taping
TL
T2L
3000
8000
Code
Part No.
Basic ordering
unit (pieces)
−
DTD543EE
−
DTD543EM
zAbsolute maximum ratings (Ta=25°C)
Symbol
Parameter
zInner circuit
Limits
DTD543EE DTD543EM
Unit
OUT
R1
Supply voltage
VCC
12
V
Input voltage
VIN
−10 to +12
V
500
mA
Collector current
∗1
IC (max)
Power dissipation
∗2
PD
150
mW
Tj
150
C
IN
R2
GND
OUT
IN
Junction temperature
Storage temperature
Tstg
−55 to +150
C
∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.
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c 2009 ROHM Co., Ltd. All rights reserved.
○
GND
R1=4.7kΩ / R2=4.7kΩ
1/2
2009.05 - Rev.B
DTD543EE / DTD543EM
Data Sheet
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
VI(off)
−
−
0.5
VI(on)
2.5
−
−
VO(on)
−
60
300
mV
IO/II= 100mA / 5mA
II
−
−
1.4
mA
VI= 5V
IO(off)
−
−
0.5
µA
VCC= 12V, VI=0V
DC current gain
GI
115
−
−
−
Transition frequency ∗
fT
−
260
−
MHz
Input resistance
R1
3.29
4.7
6.11
kΩ
−
Resistance ratio
R2/R1
0.8
1.0
1.2
−
−
Input voltage
Output voltage
Input current
Output current
Unit
V
Conditions
VCC= 5V, IO= 100µA
VO= 0.3V, IO= 20mA
VO= 2V, IO= 100mA
VCE= 10V, IE=−5mA, f=100MHz
∗ Characteristics of built-in transistor.
zElectrical characteristics curves
-10m
-5m
VO= 0.3V
-20
(on)
INPUT VOLTAGE : VI
OUTPUT CURRENT : Io (A)
(V)
-50
-10
-5
Ta= 40 C
25 C
100 C
-2
-1
-500m
-1m
-500∝
-100∝
-50∝
-20∝
-10∝
-5∝
-5m -10m -20m -50m-100m-200m -500m
OUTPUT CURRENT : IO (A)
Fig.1
Input voltage vs. output current
(ON characteristics)
-1
Ta=100 C
25 C
40 C
-200∝
-2∝
-1∝
0
200
100
Ta=100 C
25 C
40 C
50
20
10
5
2
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
INPUT VOLTAGE : VI (off) (V)
Fig.2
VO= 5V
500
-2m
-200m
-100m
-500∝ -1m -2m
1k
VCC= 5V
DC CURRENT GAIN : GI
-100
Output current vs. input voltage
(OFF characteristics)
1
-500∝ -1m -2m
-5m -10m -20m -50m-100m-200m -500m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
lO/lI=20
OUTPUT VOLTAGE : VO (on) (V)
-500m
-200m
-100m
Ta=100 C
25 C
40 C
-50m
-20m
-10m
-5m
-2m
-1m
-500∝ -1m -2m
-5m -10m -20m -50m-100m-200m -500m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output
current
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c 2009 ROHM Co., Ltd. All rights reserved.
○
2/2
2009.05 - Rev.B
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