PHILIPS BZD27-C68 Voltage regulator diode Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D121
BZD27 series
Voltage regulator diodes
Product specification
Supersedes data of October 1991
1996 Jun 10
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD27 series
FEATURES
DESCRIPTION
• Glass passivated
Cavity free cylindrical glass SOD87
package through Implotec(1)
technology. This package is
• High maximum operating
temperature
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
k
handbook, 4 columns
a
• Zener working voltage range:
3.6 to 270 V for 46 types
• Transient suppressor stand-off
voltage range: 6.2 to 430 V
for 45 types
MAM249
Fig.1 Simplified outline (SOD87) and symbol.
• Supplied in 8 mm embossed tape.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Ptot
Ptot
PZSM
PRSM
PARAMETER
MIN.
MAX.
BZD27-C3V6 to -C6V8
−
1.7
W
BZD27-C7V5 to -C510
−
2.3
W
total power dissipation
total power dissipation
CONDITIONS
Ttp = 105 °C; see Figs 2 and 3
PCB mounted (see Fig.7)
BZD27-C3V6 to -C6V8
Tamb = 60 °C; see Fig.2
−
0.8
W
BZD27-C7V5 to -C510
Tamb = 55 °C; see Fig.3
−
0.8
W
BZD27-C3V6 to -C6V8
−
300
W
BZD27-C7V5 to -C510
−
300
W
−
150
W
BZD27-C3V6 to -C6V8
−65
+200
°C
BZD27-C7V5 to -C510
−65
+175
°C
BZD27-C3V6 to -C6V8
−65
+200
°C
BZD27-C7V5 to -C510
−65
+175
°C
non-repetitive peak reverse
power dissipation
non-repetitive peak reverse
power dissipation
tp = 100 µs; square pulse;
Tj = 25 °C prior to surge; see Figs.4 and 5
10/1000 µs exponential pulse (see Fig.8);
Tj = 25 °C prior to surge
BZD27-C7V5 to -C510
Tstg
Tj
1996 Jun 10
UNIT
storage temperature
junction temperature
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD27 series
ELECTRICAL CHARACTERISTICS
Total series
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
forward voltage
VF
IF = 0.2 A; see Fig.6
MIN.
MAX.
−
1.2
UNIT
V
Per type when used as voltage regulator diodes
Tj = 25 °C unless otherwise specified.
TYPE
No.
SUFFIX
WORKING VOLTAGE
VZ (V) at IZ
DIFFERENTIAL TEMPERATURE
TEST
RESISTANCE
COEFFICIENT CURRENT
rdif (Ω) at IZ
SZ (%/K) at IZ
(1)
MIN.
NOM.
MAX.
TYP.
MAX.
MIN.
MAX.
IZ (mA)
REVERSE CURRENT
at REVERSE VOLTAGE
IR (µA)
MAX.
VR (V)
C3V6
3.4
3.6
3.8
4
8
−0.14
−0.04
100
100
1
C3V9
3.7
3.9
4.1
4
8
−0.14
−0.04
100
50
1
C4V3
4.0
4.3
4.6
4
7
−0.12
−0.02
100
25
1
C4V7
4.4
4.7
5.0
3
7
−0.10
0.00
100
10
1
C5V1
4.8
5.1
5.4
3
6
−0.08
−0.02
100
5
1
C5V6
5.2
5.6
6.0
2
4
−0.04
0.04
100
10
2
C6V2
5.8
6.2
6.6
2
3
−0.01
0.06
100
5
2
C6V8
6.4
6.8
7.2
1
3
0.00
0.07
100
10
3
C7V5
7.0
7.5
7.9
1
2
0.00
0.07
100
50
3
C8V2
7.7
8.2
8.7
1
2
0.03
0.08
100
10
3
C9V1
8.5
9.1
9.6
2
4
0.03
0.08
50
10
5
C10
9.4
10
10.6
2
4
0.05
0.09
50
7
7.5
C11
10.4
11
11.6
4
7
0.05
0.10
50
4
8.2
C12
11.4
12
12.7
4
7
0.05
0.10
50
3
C13
12.4
13
14.1
5
10
0.05
0.10
50
2
10
C15
13.8
15
15.6
5
10
0.05
0.10
50
1
11
C16
15.3
16
17.1
6
15
0.06
0.11
25
1
12
C18
16.8
18
19.1
6
15
0.06
0.11
25
1
13
C20
18.8
20
21.2
6
15
0.06
0.11
25
1
15
C22
20.8
22
23.3
6
15
0.06
0.11
25
1
16
C24
22.8
24
25.6
7
15
0.06
0.11
25
1
18
C27
25.1
27
28.9
7
15
0.06
0.11
25
1
20
C30
28
30
32
8
15
0.06
0.11
25
1
22
C33
31
33
35
8
15
0.06
0.11
25
1
24
C36
34
36
38
21
40
0.06
0.11
10
1
27
C39
37
39
41
21
40
0.06
0.11
10
1
30
C43
40
43
46
24
45
0.07
0.12
10
1
33
C47
44
47
50
24
45
0.07
0.12
10
1
36
1996 Jun 10
3
9.1
Philips Semiconductors
Product specification
Voltage regulator diodes
TYPE
No.
SUFFIX
WORKING VOLTAGE
VZ (V) at IZ
BZD27 series
DIFFERENTIAL TEMPERATURE
TEST
RESISTANCE
COEFFICIENT CURRENT
rdif (Ω) at IZ
SZ (%/K) at IZ
(1)
MIN.
NOM.
MAX.
TYP.
MAX.
MIN.
MAX.
IZ (mA)
REVERSE CURRENT
at REVERSE VOLTAGE
IR (µA)
MAX.
VR (V)
C51
48
51
54
25
60
0.07
0.12
10
1
39
C56
52
56
60
25
60
0.07
0.12
10
1
43
C62
58
62
66
25
80
0.08
0.13
10
1
47
C68
64
68
72
25
80
0.08
0.13
10
1
51
C75
70
75
79
30
100
0.08
0.13
10
1
56
C82
77
82
87
30
100
0.08
0.13
10
1
62
C91
85
91
96
60
200
0.09
0.13
5
1
68
C100
94
100
106
60
200
0.09
0.13
5
1
75
C110
104
110
116
80
250
0.09
0.13
5
1
82
C120
114
120
127
80
250
0.09
0.13
5
1
91
C130
124
130
141
110
300
0.09
0.13
5
1
100
C150
138
150
156
130
300
0.09
0.13
5
1
110
C160
153
160
171
150
350
0.09
0.13
5
1
120
C180
168
180
191
180
400
0.09
0.13
5
1
130
C200
188
200
212
200
500
0.09
0.13
5
1
150
C220
208
220
233
350
750
0.09
0.13
2
1
160
C240
228
240
256
400
850
0.09
0.13
2
1
180
C270
251
270
289
450
1000
0.09
0.13
2
1
200
Note
1. To complete the type number the suffix is added to the basic type number, e.g. BZD27-C51.
1996 Jun 10
4
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD27 series
Per type when used as transient suppressor diodes
Tj = 25 °C unless otherwise specified.
TYPE
NUMBER
REVERSE
BREAKDOWN
VOLTAGE
TEMPERATURE
COEFFICIENT
V(BR)R (V)
at Itest
SZ (%/K) at Itest
TEST
CURREN
T
CLAMPING
VOLTAGE
REVERSE
CURRENT at
STAND-OFF
VOLTAGE
IR (µA)
MAX.
at IRSM
(A)
note 1
Itest
(mA)
V(CL)R (V)
MIN.
MIN.
MAX.
BZD27-C10
7.0
7.7
8.5
9.4
0.00
0.03
0.03
0.05
0.07
0.08
0.08
0.09
100
100
50
50
11.3
12.3
13.3
14.8
13.3
12.2
11.3
10.1
1500
1200
100
20
6.2
6.8
7.5
8.2
BZD27-C11
10.4
0.05
0.10
50
15.7
9.6
5
9.1
BZD27-C12
11.4
0.05
0.10
50
17.0
8.8
5
10
BZD27-C13
12.4
0.05
0.10
50
18.9
7.9
5
11
BZD27-C15
13.8
0.05
0.10
50
20.9
7.2
5
12
BZD27-C16
15.3
0.06
0.11
25
22.9
6.6
5
13
BZD27-C18
16.8
0.06
0.11
25
25.6
5.9
5
15
BZD27-C20
18.8
0.06
0.11
25
28.4
5.3
5
16
BZD27-C22
20.8
0.06
0.11
25
31.0
4.8
5
18
BZD27-C24
22.8
0.06
0.11
25
33.8
4.4
5
20
BZD27-C27
25.1
0.06
0.11
25
38.1
3.9
5
22
BZD27-C30
28
0.06
0.11
25
42.2
3.6
5
24
BZD27-C33
31
0.06
0.11
25
46.2
3.2
5
27
BZD27-C36
34
0.06
0.11
10
50.1
3.0
5
30
BZD27-C39
37
0.06
0.11
10
54.1
2.8
5
33
BZD27-C43
40
0.07
0.12
10
60.7
2.5
5
36
BZD27-C47
44
0.07
0.12
10
65.5
2.3
5
39
BZD27-C51
48
0.07
0.12
10
70.8
2.1
5
43
BZD27-C56
52
0.07
0.12
10
78.6
1.9
5
47
BZD27-C62
58
0.08
0.13
10
86.5
1.7
5
51
BZD27-C68
64
0.08
0.13
10
94.4
1.6
5
56
BZD27-C75
70
0.08
0.13
10
103.5
1.5
5
62
BZD27-C82
77
0.08
0.13
10
114
1.3
5
68
BZD27-C91
85
0.09
0.13
5
126
1.2
5
75
BZD27-C100
94
0.09
0.13
5
139
1.1
5
82
BZD27-C110
104
0.09
0.13
5
152
1.0
5
91
BZD27-C120
114
0.09
0.13
5
167
0.90
5
100
BZD27-C130
124
0.09
0.13
5
185
0.81
5
110
BZD27-C150
138
0.09
0.13
5
204
0.73
5
120
BZD27-C160
153
0.09
0.13
5
224
0.67
5
130
BZD27-C7V5
BZD27-C8V2
BZD27-C9V1
1996 Jun 10
5
MAX.
at VR
(V)
Philips Semiconductors
Product specification
Voltage regulator diodes
TYPE
NUMBER
BZD27 series
REVERSE
BREAKDOWN
VOLTAGE
TEMPERATURE
COEFFICIENT
V(BR)R (V)
at Itest
SZ (%/K) at Itest
MIN.
MIN.
MAX.
TEST
CURREN
T
Itest
(mA)
CLAMPING
VOLTAGE
V(CL)R (V)
MAX.
at IRSM
(A)
note 1
REVERSE
CURRENT at
STAND-OFF
VOLTAGE
IR (µA)
MAX.
at VR
(V)
BZD27-C180
168
0.09
0.13
5
249
0.60
5
150
BZD27-C200
188
0.09
0.13
5
276
0.54
5
160
BZD27-C220
BZD27-C240
BZD27-C270
BZD27-C300
BZD27-C330
BZD27-C360
BZD27-C390
BZD27-C430
BZD27-C470
BZD27-C510
208
228
251
280
310
340
370
400
440
480
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
2
2
2
2
2
2
2
2
2
2
305
336
380
419
459
498
537
603
655
707
0.50
0.45
0.40
0.36
0.33
0.30
0.28
0.25
0.23
0.21
5
5
5
5
5
5
5
5
5
5
180
200
220
240
270
300
330
360
390
430
Note
1. Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8” (10/1000 µs pulse); see Fig.8.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
Rth j-a
PARAMETER
CONDITIONS
VALUE
UNIT
thermal resistance from junction to tie-point
BZD27-C3V6 to -C6V8
55
K/W
BZD27-C7V5 to -C510
30
K/W
BZD27-C3V6 to -C6V8
175
K/W
BZD27-C7V5 to -C510
150
K/W
thermal resistance from junction to ambient
note 1
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.7.
For more information please refer to the “General Part of associated Handbook”.
1996 Jun 10
6
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD27 series
GRAPHICAL DATA
MBH454
3
MBH455
3
handbook, halfpage
handbook, halfpage
Ptot
Ptot
(W)
(W)
2
2
1
1
0
0
100
0
200
T (°C)
Types BZD27-C3V6 to -C6V8
Solid line: tie-point temperature.
Dotted line: ambient temperature;
device mounted as shown in Fig.7.
Fig.2
100
0
T (°C)
200
Types BZD27-C7V5 to -C510
Solid line: tie-point temperature.
Dotted line: ambient temperature;
device mounted as shown in Fig.7.
Maximum total power dissipation as a
function of temperature.
Fig.3
Maximum total power dissipation as a
function of temperature.
MGD524
104
handbook, halfpage
MGD525
400
handbook, halfpage
PZSM
(W)
PZSM
(W)
300
103
200
102
100
10
10−2
10−1
1
tp (ms)
0
10
0
Tj = 25 °C prior to surge.
See also Fig 5.
Fig.4
3V9
4V3
4V7
5V1
5V6
6V2 6V8
VZnom (V)
Tj = 25 °C prior to surge.
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
1996 Jun 10
3V6
Fig.5
7
Maximum non-repetitive peak reverse
power dissipation as a function of nominal
working voltage.
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD27 series
MGD520
2
50
handbook, halfpage
IF
(A)
4.5
1
50
2.5
1.25
0
1
0
VF (V)
Tj = 25 °C.
Fig.6
Dimensions in mm.
Forward current as a function of forward
voltage; typical values.
Fig.7 Printed-circuit board for surface mounting.
IRSMhalfpage
handbook,
(%)
100
90
50
10
t
t1
t2
MGD521
In accordance with “IEC 60-1, Section 8”.
t1 = 10 µs.
t2 = 1000 µs.
Fig.8
1996 Jun 10
MSB213
2
Non-repetitive peak reverse current
pulse definition.
8
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD27 series
PACKAGE OUTLINE
3.5
handbook, full pagewidth
0.2
0.3
OD=
2.05
0.05
MBA505
O D1 =
1.9
0.1
Dimensions in mm.
The marking band indicates the cathode.
Fig.9 SOD87.
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jun 10
9
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