GTF701-HS3 VISHAY Vishay Semiconductors 2-Line EMI-Filter with ESD -Protection Features • Space saving LLP package • EMI/RFI filtering with integrated ESD protection for two data lines • ESD protection to IEC 61000 - 4 - 2 Level 4 • ESD protection to IEC 61000 - 4 - 5 (4 A ) • Low insertion loss up to 10 MHz • Good attenuation of high frequency signals • Low operating voltage (5 V) • Low clamping voltage • Low leakage current • Thin film-on-silicon technology • Ideal for cell phones, RF communication, and laptop computer applications Mechanical Data Case: LLP75-6A Plastic case Molding Compound Flammability Rating: UL 94 V-0 Terminals: High temperature soldering guaranteed: 260 °C/10 sec. at terminals Weight: approx. 5.2 mg Top view Pin 1 1 6 2 5 3 4 18821 Pinning: 1 = Input (Output) 1 2 = Ground 3 = Input (Output) 2 4 = Output (Input) 2 5 = not connectect 6 = Output (input) 1 19040 IN (1) 1 2 3 6 OUT (1) 5 4 IN (2) OUT (2) Parts Table Part GTF701-HS3 Document Number 85827 Rev. 1.3, 05-Jul-04 Ordering code GTF701-HS3-GS08 Marking T1 Remarks Tape and Reel www.vishay.com 1 GTF701-HS3 VISHAY Vishay Semiconductors Absolute Maximum Ratings Ratings at 25 °C, ambient temperature unless otherwise specified Parameter Test condition Symbol Value Unit P 100 mW ESD Air discharge per IEC 61000-4-2 Vpp 15 kV ESD Contact discharge per IEC 61000-4-2 Vpp 8 kV IPPM 4 A Symbol Value Unit Tj - 40 to + 125 °C TSTG - 55 to + 150 °C Steady -state power 8/20 µs waveform Max. peak pulse current Thermal Characteristics Ratings at 25 °C, ambient temperature unless otherwise specified Parameter Test condition Operating temperature Storage temperature Electrical Characteristics Ratings at 25 °C, ambient temperature unless otherwise specified Parameter Test condition Reverse stand-off voltage Symbol Min Typ. VRWM Reverse breakdown voltage IR = 1 mA VBR Reverse leakage current VR = 5 V IR VR = 3.3 V IR Total series resistance IM = 1 mA R Total capacitance VR = 0 V, f = 1 MHz btw. I/O and GND Ctot Clamping voltage IPP = 4 A, 8/20 µs waveform VC Max Unit 5 V 1 µA 0.4 µA 55 Ω 6 V 45 50 120 pF 15 V Typical Characteristics (Tamb = 25 °C unless otherwise specified) 0 Z 0 = 50 Ω 12 Transmission (S21) in dB VC - Typical Clamping Voltage ( V ) 14 10 8 6 4 2 0 1 2 3 4 5 -15 -20 I PP - Peak Pulse Current ( A ) www.vishay.com 1 6 Figure 1. Typical Clamping Voltage vs. Peak Pulse Current 2 -10 -25 0 18898 -5 18899 10 100 1000 10000 Frequency in MHz Figure 2. Typical Insertion Loss Characteristic Document Number 85827 Rev. 1.3, 05-Jul-04 GTF701-HS3 VISHAY Vishay Semiconductors 140 CD - Diode Capacitance ( pF ) f = 1 MHz 120 100 80 60 40 20 0 0 1 2 3 4 5 6 VR - Reverse Voltage ( V) 18900 Figure 3. Typical Capacitance vs. Reverse Voltage I F - Forward Current ( mA ) 10 1 0.1 0.01 0.001 0.4 0.5 0.6 0.7 0.8 0.9 VF - Forward Voltage ( V ) 18901 Figure 4. Forward Current vs. Forward Voltage 8 V R - Reverse Voltage ( V ) 7 6 5 4 3 2 1 0 0.01 18902 0.1 1 10 100 1000 IR - Reverse Current ( µA ) Figure 5. Typical Reverse Voltage vs. Reverse Current Document Number 85827 Rev. 1.3, 05-Jul-04 www.vishay.com 3 GTF701-HS3 VISHAY Vishay Semiconductors Package Dimensions in mm (Inches) 1 (0.039) 0.6 (0.023) 2 3 6 5 4 1 (0.039) 0.15 (0.006) 0.7 (0.027) 0.5 (0.020) 1 0.25 (0.010) 0.25 (0.010) (6x) ISO Method E 1.6 (0.062) 1.6 (0.062) Top View 18058 www.vishay.com 4 Document Number 85827 Rev. 1.3, 05-Jul-04 GTF701-HS3 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 85827 Rev. 1.3, 05-Jul-04 www.vishay.com 5