DU2860T RF Power MOSFET Transistor 60W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than bipolar devices ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Units Drain-Source Voltage VDS 65 V Gate-Source Voltage VGS 20 V Drain-Source Current IDS 12 A Power Dissipation PD 159 W Junction Temperature TJ 200 °C Storage Temperature TSTG -65 to +150 °C θJC 1.1 °C/W Thermal Resistance LETTER TYPICAL DEVICE IMPEDANCE F (MHz) ZIN (Ω) ZLOAD (Ω) MILLIMETERS INCHES DIM MIN MAX MIN MAX A 24.64 24.89 .970 .980 B 18.29 18.54 .720 .730 C 21.21 21.97 .835 .865 30 9.0 - j4.0 6.0 +j0.0 50 10.0 - j6.5 5.0 + j2.0 100 6.0 - j5.5 4.0 + j3.0 D 12.60 12.85 .496 .506 200 1.1 - j3.0 2.0 + j1.9 E 6.22 6.48 .245 .255 F 3.81 4.06 .150 .160 G 5.33 5.59 .210 .220 H 5.08 5.33 .200 .210 J 3.05 3.30 .120 .130 K 2.29 2.54 .090 .100 L 4.06 4.57 .160 .180 M 6.68 7.49 .263 .295 N .10 .15 .004 .006 VDD = 28V, IDQ = 300mA, POUT = 60 W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. ELECTRICAL CHARACTERISTICS AT 25°C Parameter Symbol Min Max Units BVDSS 65 - V VGS = 0.0 V , IDS = 15.0 mA Drain-Source Leakage Current IDSS - 3.0 mA VGS = 28.0 V , VGS = 0.0 V Gate-Source Leakage Current IGSS - 3.0 µA VGS = 20.0 V , VDS = 0.0 V VGS(TH) 2.0 6.0 V VDS = 10.0 V , IDS = 300.0 mA Forward Transconductance GM 1.5 - S VDS = 10.0 V , IDS = 3.0 A , Δ VGS = 1.0V, 80 μs Pulse Input Capacitance CISS - 135 pF VDS = 28.0 V , F = 1.0 MHz Output Capacitance COSS - 120 pF VDS = 28.0 V , F = 1.0 MHz Reverse Capacitance CRSS - 24 pF VDS = 28.0 V , F = 1.0 MHz Power Gain GP 13 - dB VDD = 28.0 V, IDQ = 300 mA, POUT = 60 W F =175 MHz Drain Efficiency ŋD 60 - % VDD = 28.0 V, IDQ = 300 mA, POUT = 60 W F =175 MHz VSWR-T - 30:1 - VDD = 28.0 V, IDQ = 300 mA, POUT = 60 W F =175 MHz Drain-Source Breakdown Voltage Gate Threshold Voltage Load Mismatch Tolerance Test Conditions 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. DU2860T RF Power MOSFET Transistor 60W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Typical Broadband Performance Curves GAIN VS FREQUENCY VDD=28 V IDQ=300 mA POUT=60 W 80 EFFICIENCY (%) GAIN (dB) 25 EFFICIENCY VS FREQUENCY VDD=28 V IDQ=300 mA POUT=60 W 20 15 70 60 50 10 50 100 150 25 200 50 FREQUENCY (MHz) 100 FREQUENCY (MHz) POWER OUTPUT VS POWER INPUT VDD =28 V IDQ =300 mA 80 POWER OUTPUT (W) 150MHz 100MHz 60 200MHz 40 20 0 0 0.5 1 1.5 2 2.5 2.75 3 POWER INPUT (W) 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. 150 DU2860T RF Power MOSFET Transistor 60W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant TEST FIXTURE SCHEMATIC TEST FIXTURE ASSEMBLY 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.