TLHG / O / P / R / Y4900 VISHAY Vishay Semiconductors High Efficiency LED in ∅ 3 mm Clear Package Description The TLH.4900 series was developed for applications where high light output is required. It is housed in a 3 mm clear plastic package. The small viewing angle of these devices provides a high brightness. All LEDs are categorized in luminous intensity groups. The green and yellow LEDs are categorized additionally in wavelength groups. That allows users to assemble LEDs with uniform appearance. 19222 e2 Pb Pb-free Features Applications • • • • • • • • Status lights OFF / ON indicator Background illumination Readout lights Maintenance lights Legend light Choice of five bright colors Standard ∅ 3 mm (T-1) package Small mechanical tolerances Suitable for DC and high peak current Very small viewing angle Luminous intensity categorized Yellow and green color categorized Lead-free device Parts Table Part Color, Luminous Intensity TLHR4900 Red, IV > 6.3 mcd Angle of Half Intensity (±ϕ) Technology 16 ° GaAsP on GaP TLHO4900 Soft orange, IV > 10 mcd 16 ° GaAsP on GaP TLHY4900 Yellow, IV > 10 mcd 16 ° GaAsP on GaP TLHG4900 Green, IV > 16 mcd 16 ° GaP on GaP TLHP4900 Pure green, IV > 4 mcd 16 ° GaP on GaP Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified TLHR4900 , TLHO4900 , TLHY4900 , TLHP4900 Parameter Test condition Reverse voltage DC Forward current Tamb ≤ 60 °C Surge forward current tp ≤ 10 µs Power dissipation Tamb ≤ 60 °C Junction temperature Operating temperature range Document Number 83009 Rev. 1.5, 31-Aug-04 Symbol Value VR 6 Unit V IF 30 mA IFSM 1 A PV 100 mW Tj 100 °C Tamb - 40 to + 100 °C www.vishay.com 1 TLHG / O / P / R / Y4900 VISHAY Vishay Semiconductors Parameter Test condition Symbol Value Tstg - 55 to + 100 °C Tsd 260 °C RthJA 400 K/W Storage temperature range Soldering temperature t ≤ 5 s, 2 mm from body Thermal resistance junction/ ambient Unit Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Red TLHR4900 Parameter Symbol Min Typ. IF = 10 mA IV 6.3 13 Dominant wavelength IF = 10 mA λd 612 Peak wavelength IF = 10 mA λp 635 Luminous intensity 1) Test condition Angle of half intensity IF = 10 mA ϕ ± 16 IF = 20 mA VF 2 Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 1) Unit mcd 625 Forward voltage 6 Max nm nm deg 3 V 15 V 50 pF in one Packing Unit IVmin/IVmax ≤ 0.5 Soft Orange TLHO4900 Parameter Symbol Min Typ. IF = 10 mA IV 10 26 Dominant wavelength IF = 10 mA λd 598 Peak wavelength IF = 10 mA λp 605 Luminous intensity 1) Test condition Angle of half intensity IF = 10 mA ϕ ± 16 IF = 20 mA VF 2.4 Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 1) Unit mcd 611 Forward voltage 6 Max nm nm deg 3 V 15 V 50 pF in one Packing Unit IVmin/IVmax ≤ 0.5 Yellow TLHY4900 Parameter Symbol Min Typ. IF = 10 mA IV 10 26 Dominant wavelength IF = 10 mA λd 581 Peak wavelength IF = 10 mA λp 585 Luminous intensity 1) Test condition Angle of half intensity IF = 10 mA ϕ ± 16 IF = 20 mA VF 2.4 Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 1) nm nm deg 3 V 15 V 50 pF in one Packing Unit IVmin/IVmax ≤ 0.5 www.vishay.com 2 Unit mcd 594 Forward voltage 6 Max Document Number 83009 Rev. 1.5, 31-Aug-04 TLHG / O / P / R / Y4900 VISHAY Vishay Semiconductors Green TLHG4900 Parameter Luminous intensity Test condition 1) Symbol Min Typ. IF = 10 mA IV 16 37 562 Max Unit mcd Dominant wavelength IF = 10 mA λd Peak wavelength IF = 10 mA λp 565 nm Angle of half intensity IF = 10 mA ϕ ± 16 deg Forward voltage IF = 20 mA VF Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 1) 575 2.4 6 3 nm V 15 V 50 pF in one Packing Unit IVmin/IVmax ≤ 0.5 Pure green TLHP4900 Parameter Symbol Min Typ. IF = 10 mA IV 4 13 Dominant wavelength IF = 10 mA λd 555 Peak wavelength IF = 10 mA λp 555 nm Angle of half intensity IF = 10 mA ϕ ± 16 deg Luminous intensity Test condition 1) Forward voltage IF = 20 mA VF Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 1) Max 565 2.4 6 Unit mcd 3 nm V 15 V 50 pF in one Packing Unit IVmin/IVmax ≤ 0.5 Typical Characteristics (Tamb = 25 °C unless otherwise specified) 60 IF - Forward Current ( mA) PV - Power Dissipation ( mW ) 125 100 75 50 25 0 95 10904 0 20 40 60 80 Figure 1. Power Dissipation vs. Ambient Temperature Rev. 1.5, 31-Aug-04 40 30 20 10 0 100 Tamb - Ambient Temperature ( °C ) Document Number 83009 50 0 95 10905 20 40 60 80 100 Tamb - Ambient Temperature ( °C ) Figure 2. Forward Current vs. Ambient Temperature for InGaN www.vishay.com 3 TLHG / O / P / R / Y4900 VISHAY Vishay Semiconductors I v rel - Relative Luminous Intensity 10000 t p /T= 0.01 1000 0.02 0.05 100 1 10 0.5 0.2 0.1 0.1 1 I v rel - Relative Luminous Intensity 0° 10 ° 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.4 0.2 0 0.2 0.4 0.4 I F = 10 mA 0 Figure 4. Rel. Luminous Intensity vs. Angular Displacement Red 100 t p /T = 0.001 t p = 10 µs 1 60 80 100 2.4 Red 2.0 1.6 1.2 0.8 0.4 0 10 20 50 100 200 500 I F (mA) 1 0.5 0.2 0.1 0.05 0.02 tp /T Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle I v rel - Relative Luminous Intensity 1000 40 Tamb - Ambient Temperature ( °C ) 95 10321 10 20 Figure 6. Rel. Luminous Intensity vs. Ambient Temperature 0.6 95 10044 I F - Forward Current ( mA ) 0.8 95 10027 Figure 3. Forward Current vs. Pulse Length 10 Red 1 0.1 0.01 0.1 0 2 4 6 8 Figure 5. Forward Current vs. Forward Voltage www.vishay.com 1 10 V F - Forward Voltage ( V ) 95 10026 4 1.2 100 10 t p - Pulse Length ( ms ) 95 10047 0.6 Red 0 1 0.01 I V re l - Relative Luminous Intensity IF - Forward Current ( mA ) Tamb ≤ı 65 ° C 1.6 95 10029 10 100 I F - Forward Current ( mA ) Figure 8. Relative Luminous Intensity vs. Forward Current Document Number 83009 Rev. 1.5, 31-Aug-04 TLHG / O / P / R / Y4900 VISHAY Vishay Semiconductors 2.4 Red I V re l - Relative Luminous Intensity I V re l - Relative Luminous Intensity 1.2 1.0 0.8 0.6 0.4 0.2 0 590 1.6 1.2 0.8 0.4 0 610 630 650 670 690 λ -ı Wavelength ( nm ) 95 10040 10 20 50 100 200 500 I F (mA) 1 0.5 0.2 0.1 0.05 0.02 95 10259 Figure 9. Relative Intensity vs. Wavelength Soft Orange 10 1 tp /T Figure 12. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle I v rel - Relative Luminous Intensity 100 I F - Forward Current ( mA ) Soft Orange 2.0 10 Soft Orange 1 0.1 0.1 0 1 2 3 4 0.01 5 1 V F - Forward Voltage ( V ) 95 9990 10 I F - Forward Current ( mA ) 95 9997 Figure 10. Forward Current vs. Forward Voltage Figure 13. Relative Luminous Intensity vs. Forward Current 1.2 IVrel - Relative Luminous Intensity I v rel - Relative Luminous Intensity 2.0 Soft Orange 1.6 1.2 0.8 0.4 Soft Orange 1.0 0.8 0.6 0.4 0.2 0 570 0 0 95 9994 100 20 40 60 80 100 Tamb - Ambient Temperature (° C ) Figure 11. Rel. Luminous Intensity vs. Ambient Temperature Document Number 83009 Rev. 1.5, 31-Aug-04 95 10324 590 610 630 650 670 λ - Wavelength ( nm ) Figure 14. Relative Intensity vs. Wavelength www.vishay.com 5 TLHG / O / P / R / Y4900 VISHAY Vishay Semiconductors I v rel - Relative Luminous Intensity I F - Forward Current ( mA ) 1000 Yellow 100 t p /T = 0.001 t p = 10 µs 10 1 0.1 0 2 4 6 8 0.4 I F = 10 mA 20 40 60 80 Yellow 1.0 0.8 0.6 0.4 0.2 2.0 I F - Forward Current ( mA ) I v rel - Relative Luminous Intensity 610 630 650 λ - Wavelength ( nm ) 1000 Yellow 1.6 1.2 0.8 0.4 10 20 50 100 200 500 I F (mA) 1 0.5 0.2 0.1 0.05 0.02 tp /T Figure 17. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle www.vishay.com 6 590 Figure 19. Relative Intensity vs. Wavelength 2.4 95 10260 570 95 10039 Figure 16. Rel. Luminous Intensity vs. Ambient Temperature 0 100 I F - Forward Current ( mA ) 0 550 100 Tamb - Ambient Temperature ( °C ) 95 10031 10 Figure 18. Relative Luminous Intensity vs. Forward Current IVrel - Relative Luminous Intensity I v rel - Relative Luminous Intensity 0.8 0 0.1 1.2 Yellow 1.2 0 1 95 10033 Figure 15. Forward Current vs. Forward Voltage 1.6 Yellow 0.01 1 10 V F - Forward Voltage ( V ) 95 10030 10 Green 100 t p /T = 0.001 t p = 10 µs 10 1 0.1 0 95 10034 2 4 6 8 10 V F - Forward Voltage ( V ) Figure 20. Forward Current vs. Forward Voltage Document Number 83009 Rev. 1.5, 31-Aug-04 TLHG / O / P / R / Y4900 VISHAY 1.6 1.2 Green IVrel - Relative Luminous Intensity I v rel - Relative Luminous Intensity Vishay Semiconductors 1.2 0.8 0.4 0 I F = 10 mA 0 20 40 60 80 0.8 0.6 0.4 0.2 0 520 100 T amb - Ambient Temperature ( ° C ) 95 10035 Green 1.0 I F – Forward Current ( mA ) I v rel - Specific Luminous Intensity 620 Pure Green 1.6 1.2 0.8 0.4 10 1 20 0.5 50 0.2 100 0.1 200 0.05 500 IF(mA) 0.02 tp/T 10 1 0.1 0 1 2 3 4 5 V F – Forward Voltage ( V ) 95 9988 Figure 25. Forward Current vs. Forward Voltage Figure 22. Specific Luminous Intensity vs. Forward Current 2.0 10 I Vrel - Relative Luminous Intensity I v rel - Relative Luminous Intensity 600 100 Green 2.0 Green 1 0.1 Pure Green 1.6 1.2 0.8 0.4 0 1 95 10037 580 Figure 24. Relative Intensity vs. Wavelength 2.4 95 10263 560 λ - Wavelength ( nm ) Figure 21. Rel. Luminous Intensity vs. Ambient Temperature 0 540 95 10038 10 100 I F - Forward Current ( mA ) Figure 23. Relative Luminous Intensity vs. Forward Current Document Number 83009 Rev. 1.5, 31-Aug-04 95 9991 0 20 40 60 80 100 Tamb − Ambient Temperature ( °C ) Figure 26. Rel. Luminous Intensity vs. Ambient Temperature www.vishay.com 7 TLHG / O / P / R / Y4900 VISHAY Vishay Semiconductors 2.4 I Spec - Specific Luninous Flux Pure Green 2.0 1.6 1.2 0.8 0.4 0 10 100 95 10261 1000 I F - Forward Current ( mA ) Figure 27. Specific Luminous Intensity vs. Forward Current I Vrel - Relative Luminous Intensity 10 Pure Green 1 0.1 0.01 1 10 100 I F - Forward Current ( mA ) 95 9998 Figure 28. Relative Luminous Intensity vs. Forward Current I Vrel - Relative Luminous Intensity 1.2 Pure Green 1.0 0.8 0.6 0.4 0.2 0 500 520 540 560 580 600 λ - Wavelength ( nm ) 95 10325 Figure 29. Relative Intensity vs. Wavelength www.vishay.com 8 Document Number 83009 Rev. 1.5, 31-Aug-04 VISHAY TLHG / O / P / R / Y4900 Vishay Semiconductors Package Dimensions in mm 95 10914 Document Number 83009 Rev. 1.5, 31-Aug-04 www.vishay.com 9 TLHG / O / P / R / Y4900 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 10 Document Number 83009 Rev. 1.5, 31-Aug-04 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1